specific to the following operations: snubbing or clamping, demagnetization and rectification ultra-fast and soft recovery very low overall power losses in both the diode and the companion transistor high frequency operation high reverse voltage capability features and benefits turboswitch 1200v drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. due to their optimized switching performances they also highly decrease power losses in any associated switching igbt or mosfet in all freewheel mode operations. they are particularly suitable in motor control circuitries, or in primary of smps as snubber, clamping or demagnetizing diodes. they are also suitablefor the secondaryof smpsas high voltage rectifier diodes. description i f(av) 1a v rrm 1200v t rr (typ) 65ns v f (max) 1.5v main product characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) rms forward current 6 a i frm repetitive peak forward current tp = 5 m s f = 5khz square 10 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 20 a t stg storage temperature range - 65 to + 150 c t j maximum operating junction temperature 125 c absolute ratings (limiting values) STTA112U turboswitch ? ultra-fast high voltage diode smb product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
symbol parameter test conditions min typ max unit v f* forward voltage drop i f =1a tj=25 c tj = 125 c 1.1 1.65 1.5 v i r** reverse leakage current v r = 0.8 x v rrm tj = 25 c tj = 125 c90 10 300 m a v to threshold voltage ip < 3.i f(av) tj = 125 c 1.15 v rd dynamic resistance 350 m w test pulses : * tp = 380 m s, d <2% ** tp = 5 ms , d <2% static electrical characteristics symbol parameter test conditions value unit r th(j-i) junction to lead thermal resistance 23 c/w p 1 conduction power dissipation i f(av) = 0.8a d = 0.5 tlead= 93 c 1.4 w p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) tlead= 90 c 1.5 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25 c i f = 0.5 a i r = 1a irr = 0.25a i f =1a di f /dt =-50a/ m sv r = 30v 65 115 ns i rm maximum recovery current tj = 125 cv r = 600v i f =1a di f /dt = -8 a/ m s di f /dt = -50 a/ m s5 1.8 a s factor softness factor tj = 125 cv r = 600v i f =1a di f /dt = -50 a/ m s 0.7 - dynamic electrical characteristics turn-off switching symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25 c i f = 1 a, di f /dt = 8 a/ m s measured at 1.1 v f max 900 ns v fp peak forward voltage 35 v turn-on switching to evaluatethe maximum conduction losses use the following equation : p=v to xi f(av) +rdxi f 2 (rms) STTA112U product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
package mechanical data smb e c l e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063 footprint dimensions (in millimeters) ordering type marking package weight base qty delivery mode STTA112U t03 smb 0.107g 2500 tape & reel epoxy meets ul94,v0 band indicates cathode 1.52 2.75 2.3 1.52 STTA112U product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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