digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 BTC12 series silicon bidirectional thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = 125c) BTC12-200 BTC12-400 BTC12-600 v drm 200 400 600 volts rms on-state current (t c = 70c) i t(rms) 12 amps peak non-repetitive surge current (1 cycle, 50 hz, t = 20ms) (1/2 cycle, 50hz, t = 10ms) i tsm 90 100 amps circuit fusing considerations (t j = -40 to 125c , t = 10ms) i 2 t 40 a 2 s peak gate power (pulse width = 2.0s) p gm 16 watts average gate power (t = 10ms) p g(av) 0.35 watts peak gate current (pulse width = 1.0s) i gm 4.0 amps operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c maximum rate of change of on-state current (i tm = 12a, i g = 200ma) di/dt 10 a/s note 1: ratings apply for open gate conditions. thyristor device s shall not be tested with a co nstant current source for blocki ng capability such that the voltage applied exceeds the rated blocking voltage. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.2 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ. max unit peak blocking current (either direction) (rated v drm @ t j = 125c, gate open) i drm - - 2.0 ma peak on-state voltage (either direction) (i tm = 17a peak) v tm - 1.4 1.65 volts peak gate trigger voltage (main terminal voltage = 12v, r l = 100? ) all quadrants (main terminal voltage = rated v drm , r l = 1k ? , t j = 125c) all quadrants v gtm - 0.2 - - 2.5 - volts holding current (either direction) (main terminal voltage= 12v, gate open, initiating current = 1.0a, t c = 25c) i h - - 50 ma latching current (main terminal voltage = 24v, gate trigger source = 15v, 100 ? ) mt2(+), g(+) mt2(-), g(-) mt2(+), g(-) i l - - - - - - 100 100 200 ma critical rate of rise of off state voltage (rated v drm , exponential voltage rise, gate open, t j = 125c) dv/dt 100 - - v/s blocking voltage application rate (@ t c = 80c @ v drm , i t = 6a, gate open, commutation di/dt = 4.3a/ms) dv/dt(c) 5 - - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130204
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 BTC12 series silicon bidirectional thyristors quadrant characteristic symbol i ma ii ma iii ma iv ma peak trigger current (main terminal voltage = 12v, r l = 100? ) BTC12-(), t j = 25c BTC12-(), t j = -40c i gtm 50 100 50 100 50 100 80 200 mechanical characteristic case to-220ab marking body painted, alpha-numeric pin out see below to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130204
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 BTC12 series silicon bidirectional thyristors sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130204
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 BTC12 series silicon bidirectional thyristors sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130204
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