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| hexfet power mosfet notes through are on page 9 applications control mosfet of sync-buck converters used for notebook processor power control mosfet for isolated dc-dc converters in networking systems benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current 100% tested for r g lead-free (qualified up to 260c reflow) rohs compliant (halogen free) low thermal resistance large source lead for more reliable soldering v dss r ds(on) max qg 30v 8.7m ? @v gs = 10v 8.3nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear deratin g factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jc junction-to-case ??? 7.2 c/w r ja junction-to-ambient ??? 40 max. 15 35 110 20 30 12 -55 to + 150 3.1 0.025 2.0 pqfn 5x6 mm IRFH7914PBF s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c r ds(on) static drain-to-source on-resistance ??? 7.5 8.7 ??? 11.2 13 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.08 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 77 ??? ??? s q g total gate charge ??? 8.3 12 q gs1 pre-vth gate-to-source charge ??? 2.1 ??? q gs2 post-vth gate-to-source charge ??? 1.0 ??? q gd gate-to-drain charge ??? 2.8 ??? q godr gate charge overdrive ??? 2.4 ??? see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) ??? 3.8 ??? q oss output charge ??? 4.8 ??? nc r g gate resistance ??? 1.3 2.2 ? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 11 ??? t d(off) turn-off delay time ??? 12 ??? t f fall time ??? 4.6 ??? c iss input capacitance ??? 1160 ??? c oss output capacitance ??? 220 ??? c rss reverse transfer capacitance ??? 100 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 9.5 14 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 4.5v, i d = 11a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 11a v ds = 24v, v gs = 0v, t j = 125c m ? a i d = 11a t j = 25c, i f = 11a, v dd = 15v di/dt = 200a/s t j = 25c, i s = 11a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 20v v gs = -20v v ds = 24v, v gs = 0v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 11a v gs = 0v v ds = 15v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 14a pf nc conditions see fig.15 max. 17 11 ? = 1.0mhz v ds = 15v ??? v ds = v gs , i d = 25a a 3.9 ??? ??? 110 ??? ??? na ns IRFH7914PBF fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 14a v gs = 10v IRFH7914PBF fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 10 12 14 16 18 20 22 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 11a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc IRFH7914PBF fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a ri (c/w) i (sec) 2.0021 0.000245 6.0077 0.014521 15.5002 0.7719 16.4970 38.3 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 14 16 i d , d r a i n c u r r e n t ( a ) IRFH7914PBF fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f 1 0.1 + - 0 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 14a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.1a 4.0a bottom 11a IRFH7914PBF d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16. ! " #$"#%"&' for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ( ( + - + + + - - - ? ! "# ? $%&% % ? " '' ? %&% %( & fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr IRFH7914PBF ) pqfn part marking marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6 pqfn 5x6 option "e" package details IRFH7914PBF * repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.27mh, r g = 25 ? , i as = 11a. pulse width 400s; duty cycle 2%. rthjc is guaranteed by design when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. pqfn tape and reel !"! #$ #% & '()#* + , # ! - date comments 08/08/2013 ? updated the package drawing, on page 1. ? updated the package outline drawing, on page 8. ? this drawing change is related to pcn "hana-gtbf-gem 5x6 pqfn public." re v i si o n hi sto ry |
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