2SB1658 transistor (pnp) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -5 a collector-base voltage v (br)cbo : -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 0.1 ma, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =- 0.1m a, i c =0 -6 v collector cut-off current i cbo v cb =- 30 v, i e =0 -0.1 a emitter cut-off current i ebo v eb =- 6 v, i c =0 -0.1 a h fe(1) v ce =- 2 v, i c =-1a 150 600 dc current gain h fe(2) v ce =- 2 v, i c =- 4 a 50 collector-emitter saturation voltage v ce(sat) i c =- 1 a, i b =-50ma i c =-2a, i b =-100ma i c =- 4 a, i b =-200ma -0.15 -0.25 -0.5 v base-emitter saturation voltage v be(sat) i c =-1a, i b =-100ma -1.5 v transition frequency f t v ce =- 10 v, i c =- 50 ma 95 mhz collector output capacitance c ob v cb =- 10 v, i e =0, f= 1 mhz 100 pf 1 2 3 to-126 1. emitter 2. collector 3. base 2SB1658 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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