vbo40-08no6 1~ rectifier bridge standard rectifier 3 2 4 1 part number vbo40-08no6 backside: isolated features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for one phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 rrm 800 i40 fsm 320 dav v = v a a = = i 3~ rectifier 1~ ixys reserves the right to change limits, conditions and dimensions. 20130517b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vbo40-08no6 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.15 r 1.3 k/w r min. 40 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 115 p tot 95 w t = 25c c r k/w 20 800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.33 t = 25c vj 150 v f0 v 0.81 t = c vj 150 r f 12.1 m ? v 1.07 t = c vj i = a f v 20 1.31 i = a f 40 i = a f 40 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 800 max. repetitive reverse blocking voltage t = 25c vj c j 11 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 320 345 365 360 a a a a 270 295 510 495 800 dav d = rectangular 0.5 bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 900 0.10 ixys reserves the right to change limits, conditions and dimensions. 20130517b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vbo40-08no6 ratings abcde yywwz xxxxxx product marking logo part no. datecode assembly code assembly line VBO40-16NO6 sot-227b (minibloc) 1600 package t vj c m d nm 1.5 mounting torque 1.1 t stg c 150 storage temperature -40 weight g 30 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 150 -40 terminal to terminal sot-227b ( minibloc ) similar part package voltage class vbo40-12no6 sot-227b (minibloc) 1200 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol vbo40-08no6 475866 tube 10 vbo40-08no6 standard 2500 3000 isol threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 10.2 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130517b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vbo40-08no6 3 2 4 1 outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. 20130517b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
vbo40-08no6 0 1 1 100 200 300 400 500 600 700 v f [v] i f [a] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 10 -3 10 -2 10 -1 10 0 100 150 200 250 300 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 0 255075100125150175 0 5 10 15 20 0 4 8 12 16 20 24 28 0 25 50 75 100 125 150 0 20 40 60 80 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] constants for z thjc calculation: ir th (k/w) t i (s) 1 0.061 0.0002 2 0.145 0.0036 3 0.398 0.0200 4 0.405 0.1000 5 0.291 0.7000 0.8 x v rrm 50 hz t vj =45c v r =0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =25c t vj =150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. time per diode t vj =45c t vj =150c dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130517b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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