? semiconductor components industries, llc, 2011 october, 2011 ? rev. 1 1 publication order number: ntb5426n/d ntb5426n, ntp5426n, nvb5426n power mosfet 120 amps, 60 volts n-channel d 2 pak, to-220 features ? low r ds(on) ? high current capability ? avalanche energy specified ? aec q101 qualified ? nvb5426n ? these devices are pb ? free and are rohs compliant applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage ? continuous v gs 20 v gate ? to ? source voltage ? nonrepetitive (t p < 10 s) v gs 30 v continuous drain current r jc (note 1) steady state t c = 25 c i d 120 a t c = 100 c 85 power dissipation r jc (note 1) steady state t c = 25 c p d 215 w pulsed drain current t p = 10 s i dm 260 a operating and storage temperature range t j , t stg ? 55 to +175 c source current (body diode) i s 60 a single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 50 v dc , v gs = 10 v dc , i l(pk) = 70 a, l = 0.3 mh, r g = 25 ) e as 735 mj lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? case (drain) steady state (note 1) r jc 0.7 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [1 oz] including traces). http://onsemi.com to ? 220ab case 221a style 5 1 2 3 4 marking diagrams & pin assignments g = pb ? free device a = assembly location y = year ww = work week 5426n ayww 1 gate 3 source 4 drain 2 drain 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 5426n ayww see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information v (br)dss r ds(on) max i d max (note 1) 60 v 6.0 m @ 10 v 120 a n ? channel d s g
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 64 mv/ c zero gate voltage drain current i dss v gs = 0 v v ds = 60 v t j = 25 c 1.0 a t j = 150 c 25 gate ? body leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 3.1 4.0 v negative threshold temperature coefficient v gs(th) /t j 9.2 mv/ c drain ? to ? source on voltage v ds(on) v gs = 10 v, i d = 60 a 0.3 0.36 v v gs = 10 v, i d = 60 a, 150 c 0.6 static drain ? to ? source on ? resistance r ds(on) v gs = 10 v, i d = 60 a 4.9 6.0 m forward transconductance g fs v ds = 15 v, i d = 20 a 65 s charges, capacitances & gate resistance input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 5800 pf output capacitance c oss 1000 transfer capacitance c rss 370 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 60 a 150 170 nc threshold gate charge q g(th) 6.0 gate ? to ? source charge q gs 28 gate ? to ? drain charge q gd 67 switching characteristics, v gs = 10 v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 60 a, r g = 3.0 15 ns rise time t r 100 turn ? off delay time t d(off) 105 fall time t f 95 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v i s = 60 a t j = 25 c 0.88 1.1 v dc t j = 100 c 0.78 reverse recovery time t rr i s = 60 a dc , v gs = 0 v dc , di s /dt = 100 a/ s 75 ns charge time t a 50 discharge time t b 25 reverse recovery stored charge q rr 235 c 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device package shipping ? ntp5426n to ? 220ab (pb ? free) 50 units / rail ntb5426nt4g d 2 pak (pb ? free) 800 / tape & reel NVB5426NT4G d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 3 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 5 4 3 2 1 0 0 40 80 120 160 240 7 6 3 0 40 80 120 200 240 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 10 7 6 5 0.004 0.005 0.007 130 90 70 50 30 10 0.004 0.005 0.006 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 125 100 75 50 25 0 ? 25 ? 50 0.5 1.0 1.5 50 40 30 20 10 100 1000 10,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source res- istance (normalized) i dss , leakage (na) v gs = 4.6 v 5.0 v t j = 125 c t j = ? 55 c t j = 25 c v ds 10 v 0.006 0.011 i d = 60 a t j = 25 c r ds(on) , drain ? to ? source resistance ( ) t j = 25 c i d = 60 a v gs = 10 v 175 60 v gs = 0 v t j = 125 c t j = 150 c 200 t j = 25 c 45 89 110 v gs = 10 v 0.008 0.009 0.010 2.0 2.5 5.4 v 5.8 v 6.0 v 6.2 v 6.4 v 6.6 v 10 v 160 150 555 45 35 25 15
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 4 typical characteristics c rss q2 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total charge v ds , drain ? to ? source voltage (v) q g , total gate charge (nc) 30 20 10 0 0 6000 150 50 25 0 0 2.0 4.0 8.0 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1.0 1.0 10 1000 0.8 0.7 0.6 0.5 0 20 40 80 100 120 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) 60 2000 4000 v gs = 0 v t j = 25 c c iss c oss 6.0 qt q1 t j = 25 c i d = 60 a v ds = 48 v v dd = 48 v i d = 60 a v gs = 10 v t d(off) t d(on) t r t f 1.0 0.9 v gs = 0 v t j = 25 c 60 100 10,000 8000 12,000 125 75 100 40 50 figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature v ds , drain ? to ? source voltage (v) t j , starting junction temperature ( c) 100 10 1 0.1 10 1000 100 75 50 25 0 200 600 800 i d , drain current (a) avalanche energy (mj) v gs = 10 v single pulse t c = 25 c 10 s 175 125 i d = 70 a 400 100 0.1 1 r ds(on) limit thermal limit package limit 100 s 1 ms 10 ms dc 150
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 5 typical characteristics figure 13. thermal response pulse time (sec) 1 0.1 0.001 r(t) ( c/w) 1000 0.01 0.1 10 1 100 10 100 0.01 0.001 0.0001 0.00001 0.000001 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse surface mounted on fr4 board using 1 sq in pad size, 1 oz cu
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 6 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k style 2: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
ntb5426n, ntp5426n, nvb5426n http://onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue ag notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.036 0.64 0.91 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 5: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ntb5426n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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