1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 4v drive pch mosfet rrr030p03 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance 2) space saving-small surface mount package (tsmt3) 3) 4v drive z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) rrr030p03 tl 3000 type z absolute maximum ratings (ta=25 c) ?1 ?2 ?1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ?1 pw10s, duty cycle1% ?2 when mounted on a ceramic board source current (body diode) ?30 3 12 20 ?0.8 ?12 1.0 150 ?55 to +150 z thermal resistance parameter c/w rth(ch-a) symbol limits unit c hannel to ambient 125 ? when mounted on a ceramic board ? (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2) each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : ua
rrr030p03 data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a z electrical characteristics (ta=25 c) parameter symbol i gss y fs v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?pulsed min. ?? 10 av gs = 20v, v ds =0v v dd ?15v, i d = ?3a typ. max. unit conditions ?30 ?? vi d = ?1ma, v gs =0v ??? 1 av ds = ?30v, v gs =0v ?1.0 ?? 2.5 v v ds = ?10v, i d = ?1ma ? 55 75 i d = ?3a, v gs = ?10v ? 85 115 m ? m ? m ? i d = ?1.5a, v gs = ?4.5v ? 95 125 i d = ?1.5a, v gs = ?4v 2.4 ?? sv ds = ?10v, i d = ?3a ? 480 ? pf v ds = ?10v ? 70 70 ? pf v gs =0v ? 7 ? pf f=1mhz ? 18 ? ns ? 50 ? ns ? 35 ? ns ? 5.2 ? ns ? 1.6 nc ? 1.6 ? ? nc v gs = ?5v ?? nc v dd ?15 v i d = ?1.5a v gs = ?10v r l 10? r gs =10? r l 5?, r g =10? z body diode characteristics (source-drain) (ta=25 c) v sd ?? forward voltage parameter symbol min. typ. ? 1.2 v i s = ?3a, v gs =0v max. unit conditions ?pulsed ?
rrr030p03 data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a z electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 00.20.40.60.81 -3.2v -2.8v -10v -4.5v -3.0v -3.8v ta= 25c pulsed v gs = - 2.5v 0.001 0.01 0.1 1 10 01234 v ds = - 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = - 10v ta=25c pulsed 0.01 0.1 1 10 00.20.40.60.811.2 v gs =0v pulsed ta=125c ta= 75c ta= 25c ta= - 25c 0 0.5 1 1.5 2 2.5 3 0246810 -3.2v - 10v -4.5v -3.6v -3.0v v gs = -2.8v ta=25c pulsed 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = -10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c 0.1 1 10 0.1 1 10 v ds = -10v pulsed ta= - 25c ta= 25c ta= 75c ta= 125c 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output char acter istics( ) fig .2 typical output char acter istics( ) fig .3 typical transfer characteristics fig .4 static drain- sour ce on- state resistance vs. drain current( ) fig .5 static dr ain-source on- state resistance vs. drain current( ) fig .6 static dr ain-sour ce on- state resistance vs. drain current( ) fig .7 static drain- sour ce on- state resistance vs. drain current( ) fig .9 reverse drain cur rent vs. sourse-drain voltage fig .8 for war d tr ansfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v]
rrr030p03 data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a z measurement circuit f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% pulse width 50% v gs v ds t on t off t r t d(on) t f t d(off) 50% f ig.2-1 gate charge measurement circu it v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 0 100 200 300 0246810 ta=25c pulsed i d = -1.5a i d = -3.0a 0 2 4 6 8 10 0246810 ta= 25c v dd = - 15v i d = -3.0a r g =10 ? pulsed 10 100 1000 0.01 0.1 1 10 100 ciss crss ta= 25c f=1mhz v gs =0v coss 1 10 100 1000 0.01 0.1 1 10 t r t d ( on) t d (off) ta= 25c v dd = - 15v v gs =-10v r g =10 ? pulsed t f fig.10 static drain-source on-state resistance vs. gate source voltage fig .12 dynamic input char acteristics fig .13 typical capacitance vs. drain-source voltag e fig .11 switching char acteristics static drain-source on-state resistance : r ds (on)[m =? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf]
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