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data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. 6, 8-pin dip, 200 v break down voltage 1-ch, 2-ch optical coupled mos fet solid state relay ocmos fet ps7122-1a,-2a,ps7122l-1a,-2a document no. pn10271ej01v1ds (1st edition) (previous no. p11555ej6v1ds00) date published february 2003 cp(k) printed in japan ? ? ? ? nec compound semiconductor devices 1996, 2003 the mark ? ? ? ? shows major revised points. description the ps7122-1a, -2a and ps7122l-1a, -2a are solid state relays containing gaas leds on the light emitting side (input side) and mos fets on the output side. they are suitable for analog signal control because of their low offset and high linearity. the ps7122l-1a, -2a have a surface mount type lead. features ? 1 channel type (1 a output) or 2 channel type (1 a + 1 a output) ? low led operating current (i f = 2 ma) ? designed for ac/dc switching line changer ? small package (6, 8-pin dip) ? low offset voltage ? ps7122l-1a, -2a: surface mount type ? ul approved: file no. e72422 (s) ? bsi approved: no. 8245/8246 ? csa approved: no. ca 101391 applications ? exchange equipment ? measurement equipment ? fa/oa equipment
data sheet pn10271ej01v1ds 2 ps7122-1a,-2a,ps7122l-1a,-2a package dimensions (in millimeters) 9.250.5 3.50.3 4.150.3 3.30.3 0.50.1 2.54 1.340.1 0.25 m 0 to 15? 7.62 6.50.5 9.250.5 3.50.3 1.340.1 0.25 m 2.54 6.50.5 0.10 +0.10 C0.05 0.90.25 9.600.4 9.250.5 3.50.3 4.150.3 3.30.3 0.50.1 2.54 1.340.1 0.25 m 0 to 15? 7.62 6.50.5 9.250.5 3.50.3 1.340.1 0.25 m 2.54 6.50.5 0.10 +0.10 C0.05 0.90.25 9.600.4 ps7122-1a ps7122l-1a ps7122-2a ps7122l-2a 12 4 3 65 87 top view 5. mos fet 6. mos fet 7. mos fet 8. mos fet 1. led anode 2. led cathode 3. led anode 4. led cathode 12 4 3 65 87 top view 5. mos fet 6. mos fet 7. mos fet 8. mos fet 1. led anode 2. led cathode 3. led anode 4. led cathode 1. led anode 2. led cathode 3. nc 4. mos fet drain 5. mos fet source 6. mos fet drain 123 654 top view 1. led anode 2. led cathode 3. nc 4. mos fet drain 5. mos fet source 6. mos fet drain 123 654 top view
data sheet pn10271ej01v1ds 3 ps7122-1a,-2a,ps7122l-1a,-2a ordering information part number package packing style application part number *1 ps7122-1a 6-pin dip magazine case 50 pcs ps7122-1a ps7122l-1a ps7122l-1a ps7122l-1a-e3 embossed tape 1 000 pcs/reel ps7122l-1a-e4 ps7122-2a 8-pin dip magazine case 50 pcs ps7122-2a ps7122l-2a ps7122l-2a ps7122l-2a-e3 embossed tape 1 000 pcs/reel ps7122l-2a-e4 *1 for the application of the safety standard, following part number should be used.
data sheet pn10271ej01v1ds 4 ps7122-1a,-2a,ps7122l-1a,-2a absolute maximum ratings (t a = 25 c, unless otherwise specified) ratings parameter symbol ps7122-1a, ps7122l-1a ps7122-2a, ps7122l-2a unit diode forward current (dc) i f 50 ma reverse voltage v r 5.0 v power dissipation p d 50 mw/ch peak forward current *1 i fp 1a mos fet break down voltage v l 200 v continuous connection a i l 200 ma load current *2 connection b 350 - connection c 500 - pulse load current *3 (ac/dc connection) i lp 400 ma power dissipation p d 560 375 mw/ch isolation voltage *4 bv 1 500 vr.m.s. total power dissipation p t 610 850 mw operating ambient temperature t a - 40 to +85 c storage temperature t stg - 40 to +100 c *1 pw = 100 m s, duty cycle = 1 % *2 conditions: i f 3 2 ma. the following types of load connections are available. connection a v l (ac/dc) 1 6 25 4 3 i l l connection b connection c 1 6 2 5 4 3 i l l v l (dc) + C 1 6 2 5 4 3 i l i l l v l (dc) + C 1 6 2 5 4 3 i l l v l (dc) + C i l + i l *3 pw = 100 ms, 1 shot *4 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
data sheet pn10271ej01v1ds 5 ps7122-1a,-2a,ps7122l-1a,-2a recommended operating conditions (t a = 25 c) parameter symbol min. typ. max. unit led operating current i f 21020ma led off voltage v f 00.5v electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v reverse current i r v r = 5 v 5.0 m a mos fet off-state leakage current i loff v d = 200 v 0.03 1.0 m a output capacitance c out v d = 0 v, f = 1 mhz 165 pf/ch coupled led on-state current i fon i l = 200 ma 2.0 ma on-state resistance r on1 i f = 10 ma, i l = 10 ma 3.0 5.0 w r on2 i f = 10 ma, i l = 200 ma, t 10 ms turn-on time *1 t on i f = 10 ma, v o = 5 v, r l = 500 w ,0.62.0ms turn-off time *1 t off pw 3 10 ms 0.06 0.2 isolation resistance r i-o v i-o = 1.0 kv dc 10 9 w isolation capacitance c i-o v = 0 v, f = 1 mhz 1.1 pf/ch *1 test circuit for switching time v l r l i f r in pulse input input monitor monitor v o t on t off 10 % 90 % 0 v o = 5 v 50 % output input
data sheet pn10271ej01v1ds 6 ps7122-1a,-2a,ps7122l-1a,-2a typical characteristics (t a = 25 c, unless otherwise specified) maximum forward current vs. ambient temperature ambient temperature t a (?c) maximum forward current i f (ma) C25 0 25 50 75 85 100 100 80 60 40 0 20 maximum load current vs. ambient temperature ambient temperature t a (?c) maximum load current i l (ma) C25 0 25 50 75 85 100 300 200 150 100 0 50 250 forward voltage vs. ambient temperature ambient temperature t a (?c) forward voltage v f (v) C25 0 25 50 75 100 1.6 1.4 1.2 1.0 0.8 i f = 50 ma 1 ma 5 ma 10 ma 20 ma 30 ma output capacitance vs. applied voltage applied voltage v d (v) output capacitance c out (pf) 20 40 60 80 120 100 250 200 150 100 0 50 f = 1 mhz off-state leakage current vs. applied voltage applied voltage v d (v) off-state leakage current i loff (a) load current vs. load voltage load voltage v l (v) load current i l (ma) i f =10 ma C1.0 C0.5 0.5 1.0 0 200 100 C100 C200 25 ?c t a = 85 ?c 050 100 150 200 250 10 C4 10 C5 10 C6 10 C7 10 C8 10 C9 10 C10
data sheet pn10271ej01v1ds 7 ps7122-1a,-2a,ps7122l-1a,-2a turn-on time vs. forward current forward current i f (ma) turn-on time t on (ms) 5 15 20 25 10 30 25 20 15 10 5 0 v o = 5 v 0.4 0.6 0.8 0.5 0.7 30 20 15 10 0 5 25 turn-on time t on (ms) number (pcs) turn-on time distribution 0.04 0.08 30 20 15 10 0 5 25 turn-off time t off (ms) number (pcs) turn-off time distribution turn-off time vs. forward current forward current i f (ma) turn-off time t off (ms) 5 15 20 30 25 10 0.5 0.4 0.3 0.2 0.1 0 v o = 5 v normalized on-state resistance vs. ambient temperature ambient temperature t a (?c) normalized on-state resistance r on C25 0 25 50 75 100 3.0 2.5 2.0 1.0 0.0 0.5 1.5 normalized to 1.0 at t a = 25 ?c, i f = 10 ma, i l = 10 ma on-state resistance distribution on-state resistance r on ( w ) number (pcs) 2.8 3.0 3.2 2.9 3.1 30 20 15 10 0 5 25 n = 50 pcs, i f = 10 ma, i l = 10 ma n = 50 pcs, i f = 10 ma, v o = 5 v n = 50 pcs, i f = 10 ma, v o = 5 v
data sheet pn10271ej01v1ds 8 ps7122-1a,-2a,ps7122l-1a,-2a normalized turn-off time vs. ambient temperature ambient temperature t a (?c) normalized turn-off time t off C25 0 25 50 75 100 3.0 2.5 2.0 1.0 0.0 0.5 1.5 normalized to 1.0 at t a = 25 ?c, i f = 10 ma, v o = 5 v normalized turn-on time vs. ambient temperature ambient temperature t a (?c) normalized turn-on time t on C25 0 25 50 75 100 3.0 2.5 2.0 1.0 0.0 0.5 1.5 normalized to 1.0 at t a = 25 ?c, i f = 10 ma, v o = 5 v remark the graphs indicate nominal characteristics.
data sheet pn10271ej01v1ds 9 ps7122-1a,-2a,ps7122l-1a,-2a taping specifications (in millimeters) tape direction ps7122l-1a-e3 ps7122l-2a-e3 ps7122l-1a-e4 ps7122l-2a-e4 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 10.40.1 12.00.1 1.5 +0.1 C0 7.50.1 10.30.1 16.00.3 4.00.1 0.3 outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0
data sheet pn10271ej01v1ds 10 ps7122-1a,-2a,ps7122l-1a,-2a recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temperature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 220?c package surface temperature t (?c) time (s) (heating) to 10 s to 60 s 260?c max. recommended temperature profile of infrared reflow 12030 s (preheating) 180?c 120?c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) cautions ?fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
data sheet pn10271ej01v1ds 11 ps7122-1a,-2a,ps7122l-1a,-2a m8e 00. 4 - 0110 the information in this document is current as of february, 2003. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0302 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-44-435-1588 fax: +81-44-435-1579 e-mail: salesinfo@csd-nec.com for further information, please contact ps7122-1a,-2a,ps7122l-1a,-2a safety information on this product caution gaas products the product contains gallium arsenide, gaas. gaas vapor and powder are hazardous to human health if inhaled or ingested. ? do not destroy or burn the product. ? do not cut or cleave off any part of the product. ? do not crush or chemically dissolve the product. ? do not put the product in the mouth. follow related laws and ordinances for disposal. the product should be excluded from general industrial waste or household garbage.

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