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| hall ic series / hall ic(latch type) unipolar detection hall ics bu52002gul, bu52003gul, bu52012hfv, BU52013HFV description the unipolar detection hall ic detects only either the n pole or s pole. the output turns on (active low) upon detection. it is most suitable for strictly unipole detection and when lower power consumption is desired. features 1) unipolar detection 2) micropower operation (small current using intermittent operation method) 3) ultra-compact csp4 package (bu52002gul,bu52003gul) 4) small outline package (bu52012hfv,BU52013HFV) 5) line up of supply voltage for 1.8v power supply voltage bu52012hfv,BU52013HFV) for 3.0v power supply voltage (bu5 2002gul,bu52003gul) 6) high esd resistance 8kv(hbm) applications mobile phones, notebook computers, digital video camera, digital still camera, etc. product lineup product name supply voltage (v) operate point (mt) hysteresis (mt) period (ms) supply current (avg. ) ( a) output type package bu52002gul 2.40 3.30 3.7 0.8 50 6.5 cmos vcsp50l1 bu52003gul 2.40 3.30 -3.7 0.8 50 6.5 cmos vcsp50l1 bu52012hfv 1.65 3.30 3.0 0.9 50 3.5 cmos hvsof5 BU52013HFV 1.65 3.30 -3.0 0.9 50 3.5 cmos hvsof5 plus is expressed on the s-pole; minus on the n-pole absolute maximum ratings bu52002gul,bu52003gul (ta=25 ) bu52012hfv,BU52013HFV (ta=25 ) parameters symbol limit unit parameters symbol limit unit power supply voltage v dd -0.1 +4.5 1 v power supply voltage v dd -0.1 +4.5 3 v output current i out 1 ma output current i out 0.5 ma power dissipation pd 420 2 mw power dissipation pd 536 4 mw operating temperature range t opr -40 +85 operating temperature range t opr -40 +85 storage temperature range t stg -40 +125 storage temperature range t stg -40 +125 1. not to exceed pd 2. reduced by 4.20mw for each increase in ta of 1 over 25 mounted on 50mm 58mm glass-epoxy pcb 3. not to exceed pd 4. reduced by 5.36mw for each increase in ta of 1 over 25 mounted on 70mm 70mm 1.6mm glass-e p ox y pcb jul. 2008
2/12 magnetic, electrical characteristics bu52002gul (unless otherwise specified, v dd 3.0v, ta 25 ) parameters symbol limit unit conditions min typ max power supply voltage v dd 2.4 3.0 3.3 v operate point b o p s - 3.7 5.5 mt release point b r p s 0.8 2.9 - mt hysteresis b h y ss - 0.8 - mt period t p - 50 100 ms output high vol age v oh v dd -0.4 - - v b , parameters symbol limit unit conditions min typ max power supply voltage v dd 2.4 3.0 3.3 v operate point b o p n -5.5 -3.7 - mt release point b r p n - -2.9 -0.8 mt hysteresis b h y sn - 0.8 - mt period t p - 50 100 ms output high vol age v oh v dd -0.4 - - v b rpn , parameters symbol limit unit conditions min typ max power supply voltage v dd 1.65 1.80 3.30 v operate point b o p s - 3.0 5.0 mt release point b r p s 0.6 2.1 - mt hysteresis b h y ss - 0.9 - mt period t p - 50 100 ms output high vol age v oh v dd -0.2 - - v b 3/12 BU52013HFV (unless otherwise specified, , parameters symbol limit unit conditions min typ max power supply voltage v dd 1.65 1.80 3.30 v operate point b o p n -5.0 -3.0 - mt release point b r p n - -2.1 -0.6 mt hysteresis b h y sn - 0.9 - mt period t p - 50 100 ms output high vol age v oh v dd -0.2 - - v b rpn 4/12 figure of mesurement circuit product name i out bu52002gul, bu52003gul 1.0ma bu52012hfv, BU52013HFV 0.5ma product name i out bu52002gul, bu52003gul 1.0ma bu52012hfv, BU52013HFV 0.5ma b op /b rp vdd vdd gnd out 100 f v t p 200 vdd vdd gnd out v oh vdd vdd gnd out 100 f v i out v ol vdd vdd gnd out 100 f v i out oscilloscope the period is monitored by oscilloscope. bop and brp are measured with applying the magnetic field from the outside. fig.1 b op ,b rp mesurement circuit fig.2 t p mesurement circuit fig.3 v oh mesurement circuit fig.4 v ol mesurement circuit fig.5 i dd mesurement circuit i dd vdd vdd gnd out 2200 f a 5/12 technical (reference) data bu52002gul (v dd =2.4 3.3v type) bu52003gul (v dd =2.4 3.3v type) fig.6 bop,brp ? ambient temperature fig.10 i dd ? ambient temperature fig.8 t p ? ambient temperature fig.7 bop,brp ? supply voltage fig.11 i dd ? supply voltage fig.9 t p ? supply voltage fig.12 bop,brp ? ambient temperature fig.13 bop,brp ? supply voltage fig.16 i dd ? ambient temperature fig.17 i dd ? supply voltage fig.14 t p ? ambient temperature fig.15 t p ?supply voltage 0 10 20 30 40 50 60 70 80 90 100 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =3.0v 0 10 20 30 40 50 60 70 80 90 100 2.0 2.4 2.8 3.2 3.6 supply voltage [v] period [ms] ta = 25c 0 10 20 30 40 50 60 70 80 90 100 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =3.0v 0 10 20 30 40 50 60 70 80 90 100 2.0 2.4 2.8 3.2 3.6 supply voltage [v] period [ms] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 -60 - 40 -20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] bop s brp s v dd =3.0v -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 supply voltage v magnetic flux density [mt] ta = 25c bop s brp s 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =3.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 2.0 2.4 2.8 3.2 3.6 supply voltage [v] average supply current [a] ta = 25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =3.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 2.0 2.4 2.8 3.2 3.6 supply voltage [v] average supply current [a] ta = 25c brp n bop n -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 supply voltage v magnetic flux density [mt] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 -60 - 40 -20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] v dd =3.0v brp n bop n 6/12 bu52012hfv (v dd =1.65v 3.3v type) BU52013HFV (v dd =1.65v 3.3v type) fig.24 bop,brp ? ambient temperature fig.25 bop,brp ? supply voltage fig.28 i dd ? ambient temperature fig.29 i dd ? supply voltage fig.27 t p ? supply voltage fig.26 t p ? ambient temperature fig.18 bop,brp ? ambient temperature fig.19 bop,brp ? supply voltage fig.22 i dd ? ambient temperature fig.23 i dd ? supply voltage fig.20 t p ? ambient temperature fig.21 t p ? supply voltage 0 10 20 30 40 50 60 70 80 90 100 1.41.82.22.63.03.43.8 supply voltage [v] period [ms] ta = 25c 0 10 20 30 40 50 60 70 80 90 100 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =1.8v 0 10 20 30 40 50 60 70 80 90 100 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =1.8v 0 10 20 30 40 50 60 70 80 90 100 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage [v] period [ms] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] v dd =1.8v bop s brp s -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 supply voltage v magnetic flux density [mt] ta = 25c bop s brp s 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =1.8v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage [v] average supply current [a] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] v dd =1.8v brp n bop n -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 supply voltage v magnetic flux density [mt] ta = 25c brp n bop n 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =1.8v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage [v] average supply current [a] ta = 25c 7/12 block diagram bu52002gul, bu52003gul bu52012hfv, BU52013HFV pin no. pin name function comment a1 vdd power supply a2 gnd ground b1 out output b2 n.c. open or short to gnd. pin no. pin name function comment 1 n.c. open or short to gnd. 2 gnd ground 3 n.c. open or short to gnd. 4 vdd power supply 5 out output out gnd dd latch timing logic dynamic offset cancellation sample & hold f out gnd dd latch timing logic dynamic offset cancellation sample & hold f the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. a1 b2 b1 a2 reverse a2 b2 b1 a1 surface reverse 1 2 5 3 3 surface 1 4 5 2 4 8/12 description of operations (micropower operation) (offset cancelation) (magnetic field detection mechanism) the unipolar detection hall ic adopts an intermittent operation method to save energy. at startup, the hall elements, amp, comparator and other detection circuits power on and magnetic detection begins. during standby, the detection circuits power off, thereby reducing current consumption. the detection results are held while standby is active, and then output. reference period: 50ms (max100ms) reference startup time: 24 s i dd standby startup time period t fig.32 the hall elements form an equivalent wheatstone (resistor) bridge circuit. offset voltage may be generated by a differential in this bridge resistance, or can arise from changes in resistance due to package or bonding stress. a dynamic offset cancellation circuit is employed to cancel this offset voltage. when hall elements are connected as shown in fig. 33 and a magnetic field is applied perpendicular to the hall elements, voltage is generated at the mid-point terminal of the bridge. this is known as hall voltage. dynamic cancellation switches the wiring (shown in the figure) to redirect the current flow to a 90? angle from its original path, and thereby cancels the hall voltage. the magnetic signal (only) is maintained in the sample/hold circuit during the offset cancellation process and then released. gnd v dd i b hall voltage fig.33 the hall ic cannot detect magnetic fields that run horizontal to the package top layer. be certain to configure the hall ic so that the magnetic field is perpendicular to the top layer. fig.34 s s n s n s n flux flux 9/12 bu52002gul,bu52012hfv bu52002gul,bu52012hfv detects and outputs for the s-pole only. since it is unipolar, it does not recognize the n-pole. bu52003gul,BU52013HFV bu52003gul,BU52013HFV detects and outputs for the n-pole only. since it is unipolar, it does not recognize the s-pole. the unipolar detection hall ic detects magnetic fields running perpendicular to the top surface of the package. there is an inverse relationship between magnetic flux density and the distance separating the magnet and the hall ic: when distance increases magnetic density falls. when it drops below the operate point (bop), output goes high. when the magnet gets closer to the ic and magnetic density rises, to the operate point, the output switches low. in low output mode, the distance from the magnet to the ic increases again until the magnetic density falls to a point just below bop, and output returns high. (this point, where magnetic flux density restores high output, is known as the release point, brp.) this detection and adjustment mechanism is des igned to prevent noise, oscillation and other erratic system operation. n-pole s-pole flux b low brp s bop s 0 high n-pole magnetic flux density [mt] fig.35 s-pole detection flux high high out [v] n n s s s n s-pole b bop n brp n 0 high n-pole magnetic flux density [mt] fig.36 n-pole detection flux high high low out [v] n n s s s n s-pole flux 10/12 intermittent operation at power on the unipolar detection hall ic adopts an intermittent operation method in detecting the magnetic field during startup, as shown in fig. 37. it outputs to the appropriate terminal based on the detection result and maintains the output condition during the standby period. the time from power on until the end of the initial startup period is an indefinite interval, but it cannot exceed the maximum period, 100ms. to accommodate the system design, the hall ic output read should be programmed within 100ms of power on, but after the time allowed for the period ambient temperature and supply voltage. magnet selection of the two representative varieties of permanent magnet, neodymium generally offers greater magnetic power per volume than ferrite, thereby enabling the highest degree of miniaturization, thus, neodymium is best suited for small equipment applications. fig. 38 shows the relation between the size (volume) of a neodymium magnet and magnetic flux density. the graph plots the correlation between the distance (l) from three versions of a 4mm x 4mm cross-section neodymium magnet (1mm, 2mm, and 3mm thick) and magnetic flux density. fig. 39 shows hall ic detection distance ? a good guide for determining the proper size and detection distance of the magnet. based on the bu52012hfv,BU52013HFV operating point max 5.0 mt, the minimum detection distance for the 1mm, 2mm and 3mm magnets would be 7.6mm, 9.22mm, and 10.4mm, respectively. to increase the magnet?s detectio n distance, either increase its thickness or sectional area. power on vdd startup time standby time standby time startup time (intermittentaction) indefinite out (no magnetic field present) indefinite out (magnetic field present) low high supply current fig.37 x=y=4mm t=1mm,2mm,3mm x t y flux density measuring point l: variable t fig.39 magnet dimensions and flux density measuring point magnet size magnet 0 1 2 3 4 5 6 7 8 9 10 02468101214161820 !"! #!! $% ! &'(()*+$$, -% ! .(/0&! 1+$, fig.38 7.6mm t=3mm t=1mm t=2mm 9.2mm 10.4mm magnet material: neomax-44h (material) maker: neomax co.,ltd. 11/12 position of the hall effect ic(reference) footprint dimensions (optimize footprint dimensions to the board design and soldering condition) terminal equivalent circuit diagram operation notes 1 absolute maximum ratings exceeding the absolute maximum ratings for supply voltage, operating conditions, etc. may result in damage to or destruction of the ic. because the source (short mode or open mode) cannot be identified if the device is damaged in this way, it is important to take physical safety measures such as fusing when implementing any special mode that operates in excess of absolute rating limits. 2 gnd voltage make sure that the gnd terminal potential is maintained at the minimum in any operating state, and is always kept lower than th e potential of all other pins. 3 thermal design use a thermal design that allows for sufficient margin in light of the power dissipation (pd) in actual operating conditions. 4) pin shorts and mounting errors use caution when positioning the ic for mounting on printed circuit boards. mounting errors, such as improper positioning or or ientation, may damage or destroy the device. the ic may also be damaged or destroyed if output pins are shorted together, or if shorts occ ur between the output pin and supply pin or gnd. 5 positioning components in proximity to the hall ic and magnet positioning magnetic components in close proximity to the hall ic or magnet may alter the magnetic field, and therefore the mag netic detection operation. thus, placing magnetic components near the hall ic and magnet should be avoided in the design if possible. however, where there is no alternative to employing such a design, be sure to thoroughly test and evaluate performance with the magnetic component(s) in place to verify normal operation before implementing the design. 6 operation in strong electromagnetic fields exercise extreme caution about using the device in the presence of a strong electromagnetic field, as such use may cause the ic to malfunction. 7) common impedance make sure that the power supply and gnd wiring limits common impedance to the extent possible by, for example, employing short, thick supply and ground lines. also, take measures to minimize ripple such as using an inductor or capacitor. 8 gnd wiring pattern when both a small-signal gnd and high-current gnd are provided, single-point grounding at the reference point of the set pcb is recommended, in order to separate the small-signal and high-current patterns, and to ensure that voltage changes due to the wir ing resistance and high current do not cause any voltage fluctuation in the small-signal gnd. in the same way, care must also be ta ken to avoid wiring pattern fluctuations in the gnd wiring pattern of external components. 9 exposure to strong light exposure to halogen lamps, uv and other strong light sources may cause the ic to malfunction. if the ic is subject to such expo sure, provide a shield or take other measures to protect it from the light. in testing, exposure to white led and fluorescent light s ources was shown to have no significant effect on the ic. 10) power source design since the ic performs intermittent operation, it has peak current when it?s on. please taking that into account and under exami ne adequate evaluations when designing the power source. gnd vdd fig.40 because they are configured for cmos (inverter) output, the output pins require no external resistance and allow direct connection to the pc. this, in turn, enables reduction of the current that would otherwise flow to the external resistor during magnetic field detection, and supports overall low current (micropower) operation. (unit mm) vcsp50l1 0.55 0.55 0.35 0.6 0.8 0.2 hvsof5 vcsp50l1 hvsof5 (unit mm) out 12/12 product designations (selecting a model name when ordering) b u rohm model 5 0 2 0 2 package type gu l tr, e2 reel-wound embossed taping e 2 part number vscp50l1 hvsof5 : gul : hfv vscp50l1 hvsof5 : e2 : tr orders are available in complete units only. < tape/reel info > embossed carrier tape tr (correct direction: with reel in the left hand, the 1pin of the product should be at the upper left. pull tape out with the right hand) tape quantity direction of feed 3000 p cs reel feed direction 1pin xxx xxx xxx xxx xxx xxx xxx xxx x x x xx x hvsof5 |
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