mar.2002 CM200E3U-24F application brake mitsubishi igbt modules CM200E3U-24F high power switching use ? i c ................................................................... 200a ? v ces ......................................................... 1200v ? insulated type ? 1-element in a pack outline drawing & circuit diagram dimensions in mm rtc circuit diagram c2e1 e2 c1 g2 e2 (8.25) (18) 25 25 21.5 2.5 108 14 14 14 93 0.25 48 0.25 3?6 nuts 22 8.5 18 7 7 18 18 tab #110. t=0.5 29 +1.0 ?.5 label 1max 0.5 62 15.85 10.5 6 g2 g1 tc measured point e2 e2 c1 c2 e1 e1 0.5 cm 4 6.5 mounting holes 4
mar.2002 mitsubishi igbt modules CM200E3U-24F high power switching use maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746 . * 3 : if you use this value, r th(f-a) should be measured just under the chips. 1200 20 200 400 200 400 830 1200 200 400 40 ~ +150 40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 v v a a w v a c c v n m n m g collector-emitter voltage gate-emitter voltage maximum collector dissipation repetitive peak reverse voltage forward current junction temperature storage temperature isolation voltage torque strength weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c clamp diode part t c = 25 c clamp diode part pulse clamp diode part (note 2) main terminal to base plate, ac 1 min. main terminal m6 mounting holes m6 typical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) v rrm i f i fm t j t stg v iso v ce = v ces , v ge = 0v v ge = v ces , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 200a, v ge = 15v v cc = 600v, i c = 200a v ge1 = v ge2 = 15v r g = 1.6 ? , inductive load switching operation i e = 200a i e = 200a, v ge = 0v igbt part fwdi part tc measured point is just under the chips i f = 200a, clamp diode part i f = 200a v cc = 600v, v ge1 = v ge2 = 15v r g = 1.6 ? , inductive load switching operation, clamp diode part clamp diode part case to fin, thermal compound applied *2 (1/2 module) i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 1 40 2.4 78 3.4 2.0 300 80 500 300 200 3.2 16 0.15 0.18 0.091 *3 3.2 200 0.18 ma a nf nc ns ns c v ? c/w v ns c c/w 1.8 1.9 2200 12.2 12.2 0.04 1.6 6v v 57 collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage external gate resistance thermal resistance forward voltage drop reverse recovery time reverse recovery charge thermal resistance *1 contact thermal resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r g r th(j-c) q r th(j-c) r r th(j-c ) q v fm t rr q rr r th(j-c) r r th(c-f) symbol parameter test conditions v ge(th) v ce(sat) unit typ. limits min. max.
mar.2002 mitsubishi igbt modules CM200E3U-24F high power switching use performance curves v ge = 20v t j = 25 c 15 11 10 9.5 9 8.5 8 400 200 100 250 300 350 150 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 3 2.5 2 1.5 0.5 1 0 0 200 100 400 300 t j = 25 c t j = 125 c v ge = 15v 10 1 10 2 2 3 5 7 10 3 2 3 5 7 0.5 1 1.5 2 2.5 3 3.5 t j = 25 c 5 4 3 2 1 0 20 6 8 12 16 10 14 18 i c = 400a i c = 200a i c = 80a t j = 25 c 10 ? 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res 10 1 10 2 57 10 3 23 57 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 0 conditions: v cc = 600v v ge = 15v r g = 1.6 ? t j = 125 c inductive load 23 t d(off) t d(on) t f t r output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode and clamp diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
mar.2002 mitsubishi igbt modules CM200E3U-24F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr 0 6 4 2 10 8 16 14 12 20 18 0 500 1500 2500 3000 1000 2000 v cc = 400v v cc = 600v i c = 200a 10 1 10 3 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 3 2 23 57 23 57 single pulse t c = 25 c conditions: v cc = 600v v ge = 15v r g = 1.6 ? t j = 25 c inductive load reverse recovery characteristics of clamp diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part & clamp diode part) normalized transient thermal impedance z th (j c) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) reverse recovery time t rr (ns) reverse recovery current l rr (a) igbt part: per unit base = r th(j c) = 0.15 c/ w fwdi part: per unit base = r th(j c) = 0.18 c/ w clamp di part: per unit base = r th(j c) = 0.18 c/ w
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