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important notice dear customer, as from october 1st, 2006 philips semiconductors has a new trade name - nxp semiconductors, which will be used in future data sheets together with new contact details. in data sheets where the previous philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - ? koninklijke philips electronics n.v. (year). all rights reserved - is replaced with: - ? nxp b.v. (year). all rights reserved. - if you have any questions related to the data sheet, please contact our nearest sales of?ce via e-mail or phone (details via salesaddresses@nxp.com). thank you for your cooperation and understanding, nxp semiconductors bfq591 npn 7 ghz wideband transistor rev. 04 2 october 2007 product data sheet
nxp semiconductor s p r oduct speci?cation npn 7 ghz wideband transistor bfq591 fea tures high power gain low noise figure high transition frequency gold metallization ensures excellent reliability. applica tions intended for applications in the ghz range such as matv or catv amplifiers and rf communications subscribers equipment. description npn wideband transistor in a sot89 plastic package. marking pinning type number marking code bfq591 bcp pin description 1 emitter 2 collector 3 base 321 fig.1 simplified outline (sot89). quick reference data note 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter -- 20 v v ceo collector-emitter voltage open base -- 15 v i c collector current (dc) -- 200 ma p tot total power dissipation t s 90 c; note 1 -- 2.25 w h fe dc current gain i c = 70 ma; v ce =8v 6090250 c re feedback capacitance i c = 0; v cb = 12 v; f = 1 mhz - 0.8 - pf f t transition frequency i c = 70 ma; v ce =12v; f = 1 ghz - 7 - ghz g um maximum unilateral power gain i c = 70 ma; v ce =12v; f = 900 mhz; t amb =25 c - 11 - db | s 21 | 2 insertion power gain i c = 70 ma; v ce =12v; f = 900 mhz; t amb =25 c - 10 - db rev. 04 - 2 october 2007 2 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 limiting v alues in accordance with the absolute maxim um system (iec 60134). note 1. t s is the temperature at the soldering point of the collector pin. thermal chara cteristics note 1. t s is the temperature at the soldering point of the collector pin. symbol p arameter conditions min. max. unit v cbo collector-base v oltage open emitter - 20 v v ceo collector-emitter v oltage open base - 15 v v ebo emitter-base v oltage open collector - 3v i c collector current (dc) - 200 ma p tot total po w er dissipation t s 90 c; note 1 - 2.25 w t stg stor age temper ature - 65 +150 c t j junction temper ature - 175 c symbol p arameter conditions v alue unit r th j-s ther mal resistance from junction to solder ing point t s 90 c; note 1 3 8 k/w rev. 04 - 2 october 2007 3 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 chara cteristics t j =2 5 c; unless otherwise speci?ed. notes 1. g um is the maximum unilateral power gain, assuming s 12 is zero and . 2. d im = 6 0 d b (din45004b); v p =v o ; v q =v o - 6 db; f p = 795.25 mhz; f q = 803.25 mhz; f r = 803.25 mhz; measured at f (p+q+r) = 793.25 mhz. symbol p arameter conditions min. typ . max. unit v (br)cbo collector-base breakdo wn v oltage i c = 0.1 ma; i e =0 -- 20 v v (br)ces collector-emitter breakdo wn v oltage i c = 0.1 ma; i b =0 -- 15 v v (br)ebo emitter-base breakdo wn v oltage i e = 0.1 ma; i c =0 -- 3v i cbo collector-base leakage current i e = 0; v cb =1 0 -- 100 na h fe dc current gain i c =7 0m a; v ce = 8 v 6 09 02 5 0 c re f eedbac k capacitance i c = 0; v cb = 1 2 v ; f = 1 mhz - 0.8 - pf f t tr ansition frequency i c = 7 0 ma; v ce =1 2v ; f = 1 ghz - 7 - ghz g um maxim um unilater al po w er gain; note 1 i c = 7 0 ma; v ce =1 2v ; t amb =2 5 c f = 900 mhz - 11 - db f = 2 ghz - 5.5 - db | s 21 | 2 inser tion po w er gain i c = 7 0 ma; v ce =1 2v ; f = 1 ghz; t amb =2 5 c - 10 - db v o output v oltage note 2 - 700 - mv g um 10 log s 21 2 1s 11 2 C () 1s 22 2 C () ------------------------------------------------------- - db = rev. 04 - 2 october 2007 4 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 handbook, halfpage 0 t s ( c) 3 2 1 0 50 100 200 150 mld796 p tot (w) fig.2 power derating curve. handbook, halfpage 0 250 50 100 150 200 mra749 10 - 2 10 - 1 11010 2 h fe i c (ma) fig.3 dc current gain as a function of collector current; typical values. v ce =12v. handbook, halfpage 0 v cb (v) 1.2 0.8 0.4 0 48 16 12 mld797 c re (pf) fig.4 feedback capacitance as a function of collector-base voltage; typical values. i c = 0; f = 1 mhz. handbook, halfpage 8 4 2 0 6 mld798 1 f t (ghz) i c (ma) 10 10 2 fig.5 transition frequency as a function of collector current. v ce = 12 v; f = 1 ghz. rev. 04 - 2 october 2007 5 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 handbook, halfpage 0 g max 40 80 i c (ma) gain (db) 120 25 0 20 15 10 5 mld799 g um fig.6 gain as a function of collector current; typical values. v ce = 12 v; f = 900 mhz. handbook, halfpage 0 msg g um 40 80 i c (ma) gain (db) 120 10 0 8 6 4 2 mld800 fig.7 gain as a function of collector current; typical values. v ce = 12 v; f = 2 ghz. handbook, halfpage 40 0 20 30 10 mld801 10 f (mhz) gain (db) 10 4 10 3 10 2 g um msg msg g max fig.8 gain as a function of frequency; typical values. i c = 70 ma; v ce =12v. rev. 04 - 2 october 2007 6 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 handbook, halfpage 04080 i c (ma) d im (db) 120 - 30 - 40 - 60 - 70 - 50 mld802 fig.9 intermodulation distortion as function of collector current; typical values. v o = 700 mv; v ce = 12 v; t amb =25 c; f (p+q+r) = 793.25 mhz. handbook, halfpage 04080 i c (ma) d 2 (db) 120 - 30 - 80 - 40 - 50 - 60 - 70 mld803 fig.10 second order intermodulation distortion as function of collector current; typical values. v o = 316 mv; v ce = 12 v; f (p+q) = 810 mhz. rev. 04 - 2 october 2007 7 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 spice parameter s f or the bfq591 die . note 1. these parameters have not been extracted, the default values are shown. list of components (see fig.11) seq uence no. p arameter v alue unit 1 i s 1.341 fa 2 b f 123.5 - 3 n f .988 - 4 v af 75.85 v 5 ikf 9.656 ma 6 ise 232.2 fa 7 n e 2.134 - 8 b r 10.22 - 9 n r 1.016 - 10 v a r 1.992 v 11 ikr 294.1 ma 12 isc 211.0 aa 13 nc 997.2 - 14 rb 5.00 w 15 irb 1.000 m a 16 rbm 5.00 w 17 re 1.275 w 18 rc 920.6 w 19 (1) xtb 0.000 - 20 (1) eg 1.110 ev 21 (1) xti 3.000 - 22 cje 3.821 pf 23 vje 600.0 mv 24 mje 348.5 - 25 tf 13.60 ps 26 xtf 71.73 - 27 vtf 10.28 v 28 itf 1.929 ma 29 ptf 0.000 deg 30 cjc 1.409 ff 31 vjc 219.4 mv 32 mjc 166.5 - 33 xcj 2.340 - 34 tr 543.7 ps 35 (1) cjs 0.000 f 36 (1) vjs 750.0 mv 37 (1) mjs 0.000 - 38 fc 733.2 - designa tion v alue unit c be 16 ff c cb 150 ff c ce 150 ff l1 1 n h l2 0.01 nh l3 1 n h l b 1.2 nh l e 1.2 nh handbook, halfpage mbc964 b e c b' c' e' l b l e l3 l1 l2 c cb c be ce c ql b = 50;ql e = 50;ql b,e ( f )=q l b,e ? (f/f c ); f c = scaling frequency = 1 ghz. fig.11 package equivalent circuit sot89. rev. 04 - 2 october 2007 8 of 11
nxp semiconductors product speci?cation npn 7 ghz wideband tr ansistor bfq591 p a cka ge outline references outline version european projection issue date iec jedec jeita dimensions (mm are the original dimensions) sot89 to-243 sc-62 06-03-16 06-08-29 w m e 1 e e h e b b 0 2 4 mm scale b p3 b p2 b p1 c d l p a plastic surface-mounted package; collector pad for good heat transfer; 3 leads sot89 12 3 unit a mm 1.6 1.4 0.48 0.35 c 0.44 0.23 d 4.6 4.4 e 2.6 2.4 h e l p 4.25 3.75 e 3.0 w 0.13 e 1 1.5 1.2 0.8 b p2 b p1 0.53 0.40 b p3 1.8 1.4 rev. 04 - 2 october 2007 9 of 11
nxp semiconductors bfq591 npn 7 ghz wideband transistor legal information data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. rev. 04 - 2 october 2007 10 of 11
nxp semiconductors bfq591 npn 7 ghz wideband transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 2 october 2007 document identifier: bfq591_n_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. revision history revision history document id release date data sheet status change notice supersedes bfq591_n_4 20071002 product data sheet - bfq591_3 modi?cations: ? fig. 1 and package outline updated bfq591_3 20020204 product speci?cation - bfq591_n_2 bfq591_n_2 (9397 750 09252) 20020102 preliminary speci?cation bfq591_n_1 bfq591_n_1 (9397 750 09013) 20011203 preliminary speci?cation - -

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