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a microchip technology company ?2012 silicon storage technology, inc. ds75041b 07/12 data sheet www.microchip.com features ? excellent rf stability with moderate gain: ? typically 25 db gain across 2.4 ? 2.5 ghz ? high linear output power: ? >26 dbm p1db - please refer to ?absolute maximum stress ratings? on page 6 ? meets 802.11g ofdm acpr requirement up to 23.5 dbm ? ~2.5% added evm up to 18 dbm (high-efficiency con- figuration) or ~3% added evm up to 19.5 dbm (high- power configuration) for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 23 dbm ? high power-added efficiency/low operating cur- rent for 802.11b/g/n applications ? ~34%/200 ma @ p out = 23.5 dbm for 802.11g ? ~31%/195 ma @ p out = 23 dbm for 802.11b ? single-pin low i ref power-up/down control ?i ref <2 ma ? low idle current ? ~40-65 ma i cq , depending on package type and config- uration. ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? low shut-down current (~2 a) ? high temperature stability ? ~1 db gain/power variation between 0c to +85c ? excellent on-chip power detection ? 20 db dynamic range on-chip power detection ? db-wise linear output voltage ? temperature stable and load insensitive ? simple input/output matching ? packages available ? 8-contact xson ? 2mm x 2mm ? 6-contact xson ? 1.5mm x 1.5mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11b/g/n) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz high-power, high-gain power amplifier sst12lp19e sst12lp19e is a versatile power amplifier based on the highly-reliable ingap/ gaas hbt technology. sst12lp19e is a 2.4 ghz fully-integrated, high-power, high-gain power amplifier module designed in compliance with ieee 802.11b/g/n applications. it typically provides 25 db gain with 34% power-added efficiency. sst12lp19e has excellent linearity while meeting 802.11g spectrum mask at 23.5 dbm and 802.11b spectrum mask at 23 dbm. this power amplifier includes a power detector with db-wise linear voltage output and features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. sst12lp19e and is offered in both 6- and 8-contact xson packages. proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 2 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company product description sst12lp19e is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. sst12lp19e can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 ghz frequency band. it typically provides 25 db gain with 34% power-added effi- ciency (pae) @ p out = 23.5 dbm for 802.11g and 31% pae @ p out = 23 dbm for 802.11b. this device has excellent linearity, typically ~3% added evm at 19.5 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dbm and 802.11b spectrum mask at 23 dbm. sst12lp19e can also be easily configured for high-efficiency operation, typically ~2.5% added evm at 18 dbm output power and 92 ma total power consumption for 54 mbps 802.11g applications. high-efficiency oper- ation is desirable in embedded applications, such as in hand-held units, where sst12lp19e can provide 25 db gain and meet 802.11b/g/n spectrum mask at 22 dbm output power with 34% pae. this power amplifier also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. ultra-low reference current (total i ref ~2 ma) makes the sst12lp19e controllable by an on/off switching signal directly from the baseband chip. these features cou- pled with low operating current make the sst12lp19e ideal for the final stage power amplification in battery- powered 802.11b/g/n wlan transmitter applications. sst12lp19e has an excellent on-chip, single-ended power detector, which features wide-range (>15 db) with db-wise linear output voltage. the e xcellent on-chip power detector provides a reliable solution to board- level power control. the sst12lp19e is offered in both 8-contact xson and 6-contact xson packages. see figure 3 for pin assignments and tables 1 and 2 for pin descriptions. proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 3 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company functional blocks figure 1: functional block diagram 8-contact xson (qx8) figure 2: functional block diagram 6-contact xson (qx6) 4 3 2 1 5 6 7 8 bias circuit vcc1 vccb vref rfin rfout rfout vcc2 1423 f1.1 det 1423 f2.1 vcc1 vccb vref rfin vcc2/rfout det 3 2 1 4 5 6 bias circuit proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 4 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company pin assignments figure 3: pin assignments 1423 f3b.0 vcc1 vccb vref rfin vcc2/rfout det 3 2 1 4 5 6 top view rf & dc ground 0 (contacts facing down) 8-contact xson 6-contact xson 4 3 2 1 5 6 7 8 vcc1 vccb vref rfin rfout rfout vcc2 top view rf & dc ground 0 (contacts facing down) det 1423 f3a.0 proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 5 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company pin descriptions table 1: pin description, 8-contact xson (qx8) symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low inductance ground pad v cc1 1 power supply pwr power supply, 1 st stage rf in 2 i rf input, dc decoupled v ccb 3 power supply pwr supply voltage for bias circuit vref 4 pwr 1 st and 2 nd stage idle current control det 5 o on-chip power detector rfout 6 o rf output rfout 7 o rf output v cc2 8 power supply pwr power supply, 2 nd stage t1.0 75041 table 2: pin description, 6-contact xson (qx6) symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low inductance ground pad v cc1 1 power supply pwr power supply, 1 st stage rf in 2 i rf input, dc decoupled v ccb 3 power supply pwr supply voltage for bias circuit vref 4 pwr 1 st and 2 nd stage idle current control det 5 o on-chip power detector v cc2 / rfout 6 power supply pwr/o power supply, 2 nd stage/ rf output t2.0 75041 proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 6 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company electrical specifications the rf and dc specifications for the power amplifier interface signals. refer to table 4 for the dc voltage and current specifications. refer to figures 4 through 14 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pin 2 (p in )..................................................... +5dbm average output power from pins 6 and 7 (p out ) 1 for 8-contact xson ................. +26dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. average output power from pin 6 (p out ) 1 for 6-contact xson ....................... +26dbm supply voltage to pins1, 3, and 8 (v cc ) for 8-contact xson .................... -0.3v to +4.6v supply voltage to pins 1, 3, and 6 (v cc ) for 6-contact xson .................... -0.3v to +4.6v reference voltage to pin 4 (v ref )......................................... -0.3v to +3.3v dc supply current (i cc ) 2 ..................................................... 400ma 2. measured with 100% duty cycle 54 mbps 802.11g ofdm signal operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 3: operating range range ambient temp v dd industrial -40c to +85c 3.3v t3.1 75041 proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 7 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company table 4: dc electrical characteristics at 25c symbol parameter min. typ max. unit test conditions v cc supply voltage at pins1, 3, and 8 for 8-contact xson 3.0 3.3 4.2 v figures 15 and 16 supply voltage at pins 1, 3, 6 for 6-contact xson 3.0 3.3 4.2 v figures 17 and 18 i cq idle current to meet evm ~3% @ 19.5 dbm for 8-contact xson 1 60 ma figure 15 idle current to meet evm ~2.5% @ 18 dbm for 8-contact xson 1 45 figure 16 idle current to meet evm ~3% @ 19.5 dbm for 6-contact xson 1 50 ma figure 17 idle current to meet evm ~2.5% @ 18 dbm for 6-contact xson 1 45 ma figure 18 i cc (802.11g) current consumption to meet evm ~3% @ 19.5 dbm for 8-contact xson 1 130 ma figure 15 current consumption to meet evm ~2.5% @18 dbm for 8- contact xson 1 92 ma figure 16 current consumption to meet evm ~3% @ 19.5 dbm for 6-contact xson 1 132 ma figure 17 current consumption to meet evm ~2.5% @18 dbm for 6- contact xson 1 90 ma figure 18 i cc (802.11g mask) current consumption to meet spectrum mask @23.5 dbm for 8-contact xson 1 200 ma figure 15 current consumption to meet spectrum mask @22 dbm for 8- contact xson 1 140 ma figure 16 current consumption to meet spectrum mask @23.5 dbm for 6-contact xson 1 190 ma figure 17 current consumption to meet spectrum mask @22 dbm for 6- contact xson 1 138 ma figure 18 i cc (802.11b mask) current consumption to meet spectrum mask @23 dbm for 8-contact xson 2 195 ma figure 15 current consumption to meet spectrum mask @22 dbm for 8-contact xson 2 140 ma figure 16 current consumption to meet spectrum mask @23 dbm for 6-contact xson 2 185 ma figure 17 current consumption to meet spectrum mask @22.5 dbm for 6-contact xson 2 150 ma figure 18 v reg reference voltage for 8-contact xson with no resistor 2.75 2.85 2.95 v figure 15 reference voltage for 8-contact xson with300 ? resis- tor 2.75 2.85 2.95 v figure 16 reference voltage for 6-contact xson with 200 ? resis- tor 2.75 2.85 2.95 v figure 17 reference voltage for 6-contact xson with 360 ? resis- tor 2.75 2.85 2.95 v figure 18 t4.2 75041 1. 802.11g ofdm 54 mbps signal 2. 802.11b dsss 1 mbps signal proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 8 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company table 5: rf characteristics at 25c 1 symbol parameter min. typ max. unit test conditions f l-u frequency range 2412 2484 mhz g small signal gain 24 25 db g var1 gain variation over band (2412?2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -30 dbc evm added evm @ 19.5 dbm output power for 8-con- tact xson 2 3 % figure 15 added evm @ 18 dbm output power for 8-contact xson 2 2.5 3 % figure 16 added evm @ 19.5 dbm output power for 6-con- tact xson 2 3 % figure 17 added evm @ 18 dbm output power for 6-contact xson 2 2.5 3 % figure 18 p out (802.11g mask) output power to meet spectrum mask for 8-contact xson 2 22.5 23.5 dbm figure 15 output power to meet spectrum mask for 8-contact xson 2 21 22 dbm figure 16 output power to meet spectrum mask for 6-contact xson 2 22.5 23.5 dbm figure 17 output power to meet spectrum mask for 6-contact xson 2 21 22 dbm figure 18 p out (802.11b mask) output power to meet spectrum mask for 8-contact xson 3 22 23 dbm figure 15 output power to meet spectrum mask for 8-contact xson 3 21 22 dbm figure 16 output power to meet spectrum mask for 6-contact xson 3 22 23 dbm figure 17 output power to meet spectrum mask for 6-contact xson 3 21.5 22.5 dbm figure 18 t5.2 75041 1. evm measured with ?sequence-only? equalizer channel estimation 2. 802.11g ofdm 54 mbps signal 3. 802.11b dsss 1 mbps signal proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 9 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 4: s-parameters s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 s11 (db) frequency (ghz) s21 (db) s22 (db) s12 (db) frequency (ghz) 1423 s-parms.1.0 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 s22 versus frequency -30 -25 -20 -15 -10 -5 0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) 8.0 proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 10 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company typical performance characteristics for high-power applications test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal, qx6e example figure 5: evm versus output power, measured with equalizer channel estimation set to ?sequence only? figure 6: power gain versus output power 1423 f5.1 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10111213141516171819202122232425 evm (%) output power (dbm) evm versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1423 f6.0 power gain versus output power 10 12 14 16 18 20 22 24 26 28 30 0 1 2 3 4 5 6 7 8 9 10111213141516171819202122232425 output power (dbm) power gain (db) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 11 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 7: total current consumption for 802.11g operation versus output power figure 8: pae versus output power 1423 f7.0 supply current versus output power 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 output power (dbm) supply current (ma) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1423 f8.0 pae versus output power 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 0 1 2 3 4 5 6 7 8 9 10111213141516171819202122232425 output power (dbm) pae (%) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 12 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 9: detector characteristics versus output power typical performance characteristics for high-efficiency applications test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal, qx6e example figure 10: evm versus output power, measured with equalizer channel estimation set to ?sequence only? 1423 f9.0 detector voltage versus output power 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 012345678910111213141516171819202122232425 output power (dbm) detector voltage (v) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1423 f10.1 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 101112131415161718192021222324 evm (%) output power (dbm) evm versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 13 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 11: power gain versus output power figure 12: total current consumption for 802.11g operation versus output power 1423 f11.0 power gain versus output power 10 12 14 16 18 20 22 24 26 28 30 0123456789101112131415161718192021222324 output power (dbm) power gain (db) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1423 f12.0 supply current versus output power 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 0 1 2 3 4 5 6 7 8 9 101112131415161718192021222324 output power (dbm) supply current (ma) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 14 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 13: pae versus output power figure 14: detector characteristics versus output power 1423 f13.0 pae versus output power 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 0123456789101112131415161718192021222324 output power (dbm) pae (%) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1423 f14.0 detector voltage versus output power 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 output power (dbm) detector voltage (v) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 15 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 15: typical schematic for 8-contact xson (qx8) for high-power applications 1423 f15.0 vcc 12 nh / 0603 0.1 f 50 rfin rfout 50 1.0 nh vdet 100 pf vreg r1 = 0 test conditions: vcc = 3.3 v vreg = 2.85 v sst12lp19e 2x2 8l xson top view 4 3 2 1 5 6 7 8 0.1 f 0.1 f 10 f 100 pf 1.8 pf proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 16 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 16: typical schematic for 8-contact xson (qx8) for high-efficiency applications 1423 f16.0 vcc 12 nh / 0603 0.1 f 50 rfin rfout 50 1.0 nh vdet 100 pf vreg r1 = 300 test conditions: vcc = 3.3 v vreg = 2.85 v sst12lp19e 2x2 8l xson top view 4 3 2 1 5 6 7 8 0.1 f 0.1 f 10 f 100 pf 1.5 pf proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 17 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 17: typical schematic for 6-contact xson (qx6) for high-power applications figure 18: typical schematic for 6-contact xson (qx6) for high-efficiency applications 1423 f17.0 vcc 12 nh 0.1 f 50 rfin rfout 100 pf 50 vref r1 = 200 12lp19e 1.5x1.5 6l xson top view 3 2 1 4 5 6 vdet 1.0 nh 0.1 f 0.1 f 4.7 f 1.8 pf 100 p f test conditions: vcc = 3.3 v vreg = 2.85 v 1423 f18.0 vcc 12 nh 0.1 f 50 rfin rfout 100 pf 50 vref r1 = 360 3 2 1 4 5 6 vdet 1.0 nh 0.1 f 0.1 f 4.7 f 1.5 pf 12lp19e 1.5x1.5 6l xson top view 100 p f test conditions: vcc = 3.3 v vreg = 2.85 v proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 18 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company product ordering information valid combinations for sst12lp19e SST12LP19E-QX8E sst12lp19e-qx6e sst12lp19e evaluation kits SST12LP19E-QX8E-k sst12lp19e-qx6e-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lp 19e - qx8e xx xx xxx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier 6 = 6 contact 8 = 8 contact package type qx = xson product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix ?e? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?. proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 19 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company packaging diagrams figure 19: 8-contact extremely-thin quad small outline no-lead (xson) sst package code: qx8 top view bottom view side view 0.50 0.41 0.08 pin # 1 2.00 0.10 pin #1 (laser engraved see note 2) 2.00 0.10 0.40 bsc 0.3 0.2 8-xson-2x2-qx8-4.0 1mm 0.05 max 0.75 see notes 3 and 4 1.60 note: 1. similar to jedec jep95 xqfn/xson variants, though number of contacts and some dimensions are different. 2. the topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. 3. from the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 4. the external paddle is electrically connected to the die back-side and to v ss . this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 5 untoleranced dimensions are nominal target dimensions. 6. all linear dimensions are in millimeters (max/min). 1.55 proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 20 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company figure 20: 6-contact extremely-thin quad small outline no-lead (xson) sst package code: qx6 top view bottom view side view 0.50 0.40 0.75 pin # 1 1.50 0.10 pin #1 (laser engraved) 1.50 0.10 0.50 bsc 0.20 0.20 6-xson-1.5x1.5-qx6-1.0 1mm 0.05 max 0.70 see notes 2 and 3 1.20 note: 1. similar to jedec jep95 xqfn/xson variants, though number of contacts and some dimensions are different. 2. from the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 3. the external paddle is electrically connected to the die back-side and to v ss . this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). proprietary and confidential
?2012 silicon storage technology, inc. ds75041b 07/12 21 2.4 ghz high-power, high-gain power amplifier sst12lp19e data sheet a microchip technology company table 6: revision history revision description date 00 ? initial release of data sheet mar 2010 01 ? revised ?absolute maximum stress ratings? on page 6 ? changed operating range to industrial on page 6 ? updated table 4 on page 7 ? changed document status to ?preliminary specifications? mar 2010 02 ? changed document status from ?preliminary specifications? to ?data sheet.? ? made a minor correction in ?product description? on page 2 jul 2010 a ? updated figures 1 and 2 ? updated figures 5 and 10 to show measurements with equalizer channel estimation set to ?sequence only? ? applied new document format ? released document under letter revision system ? updated spec number from s71423 to ds75041 jan 2012 b ? updated figure 19 on page 19 to reflect new pin1 indicator jul 2012 ? 2012 silicon storage technology, inc?a microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-62076-412-1 proprietary and confidential

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