? semiconductor components industries, llc, 2001 september, 2004 ? rev. xxx 1 publication order number: ntp6n50/d ntp6n50 preferred devices product preview power mosfet 6 amps, 500 volts n?channel to?220 designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drain?source voltage v dss 500 vdc drain?gate voltage (r gs = 1.0 m w ) v dgr 500 vdc gate?source voltage ? continuous ? non?repetitive (t p 10 ms) v gs v gs 20 40 vdc drain ? continuous @ t a 25 c ? continuous @ t a 100 c ? single pulse (t p 10 m s) i d i d i dm 6.0 5.0 18 adc apk total power dissipation @ t a 25 c derate above 25 c total power dissipation @ t a 25 c (note 1.) p d 104 0.83 1.75 watts w/ c watts operating and storage temperature range t j , t stg ?55 to +150 c single drain?to?source avalanche energy ? starting t j = 25 c (v dd = 100 v, v gs = 10 vdc, i l (pk) = 6 a, l = 10 mh, v ds = 500 vdc, r g = 25 w ) e as 180 mj thermal resistance ? junction?to?case ? junction?to?ambient r q jc r q ja 1.2 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. repetitive rating; pulse width limited by maximum junction temperature. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 6 amperes 500 volts r ds(on) = 1700 m w preferred devices are recommended choices for future use and best overall value. device package shipping ordering information ntp6n50 to?220ab 50 units/rail to?220ab case 221a style 5 1 2 3 4 http://onsemi.com n?channel d s g marking diagram & pin assignment ntp6n50 = device code ll = location code y = year ww = work week ntp6n50 llyww 1 gate 3 source 4 drain 2 drain
ntp6n50 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 2.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 500 ? ? 590 ? ? vdc mv/ c zero gate voltage drain current (v ds = 500 vdc, v gs = 0 vdc) (v ds = 500 vdc, v gs = 0 vdc, t j =125 c) i dss ? ? ? ? 10 100 m adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 2.) gate threshold voltage (v ds = v gs , i d = 250 m adc) temperature coefficient (negative) v gs(th) 2.0 ? 3.1 6.4 4.0 ? vdc mv/ c static drain?to?source on?resistance (v gs = 10 vdc, i d = 3 adc) r ds(on) ? 1300 1700 m w static drain?to?source on?resistance (v gs = 10 vdc, i d = 6 adc) (v gs = 10 vdc, i d = 3 adc, t j = 125 c) v ds(on) ? ? ? ? 12.2 11.0 v forward transconductance (v ds = 15 vdc, i d = 3 adc) g fs ? 6.7 ? mhos dynamic characteristics input capacitance (v 25 vd v 0vd c iss ? 520 730 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss ? 170 240 transfer capacitance f = 1 . 0 mhz) c rss ? 5.0 20 switching characteristics (note 3.) turn?on delay time t d(on) ? 9.0 20 ns rise time (v dd = 250 vdc, i d = 6 adc, v gs =10vdc t r ? 12 20 turn?off delay time v gs = 10 vdc, r g = 9.1 w ) t d(off) ? 17 40 fall time r g 9.1 w ) t f ? 12 30 gate charge (v 400 vd i 6ad q t ? 10 20 nc (v ds = 400 vdc, i d = 6 adc, v gs = 10 vdc ) q 1 ? 3.0 ? v gs = 10 vdc) q 2 ? 6.0 ? source?drain diode characteristics forward on?voltage (note 2.) (i s = 6 adc, v gs = 0 vdc) (i s = 6 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 0.9 0.8 1.0 ? vdc reverse recovery time t rr ? 251 ? ns (i = 6 adc v = 0 vdc t a ? 168 ? (i s = 6 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b ? 83 ? reverse recovery stored charge di s /dt = 100 a/ m s) q rr ? 2.3 ? m c 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntp6n50 http://onsemi.com 3 6 8 4 2 0 3 2.5 2 1.5 1 v ds , drain?to?source voltage (volts) i d , drain current (amps) v gs , gate?to?source voltage (volts) i d , drain current (amps) i d , drain current (amps) i d , drain current (amps) r ds(on) , drain?to?source resistance ( w ) r ds(on) , drain?to?source resistance ( w ) t j , junction temperature ( c) v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 2.5 1.5 1 0 100 10 1000 10000 012 6 8 2 figure 1. on?region characteristics figure 2. transfer characteristics 1 4 3 2 4 3 2 1 0 56 8 figure 3. on?resistance versus drain current and temperature figure 4. on?resistance versus drain current and gate voltage figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current versus voltage 10 ?50 50 25 0 ?25 75 125 100 357 4 100 250 300 200 150 350 500 4 2 0 24 72 5 4 36710 8 150 0.5 8 16 20 6 8 v v ds 10 v t j = 25 c t j = ?55 c t j = 100 c t j = 25 c t j = ?55 c t j = 100 c v gs = 10 v v gs = 10 v v gs = 0 v t j = 150 c t j = 100 c i d = 3 a v gs = 10 v v gs = 10 v 7 v 6 v 5.5 v 5 v 4.5 v 9 v gs = 15 v 2 9 v t j = 25 c 4 v 4 6 10 14 18 22 t j = 25 c 400 450
ntp6n50 http://onsemi.com 4 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) q g , total gate charge (nc) v gs , gate?to?source voltage (volts) r g , gate resistance ( w )v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) v ds , drain?to?source voltage (volts) t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain?to?source avalanche energy (mj) 100 10 1 0.1 0.01 1000 100 1 25 20 15 10 5 0 200 150 125 100 75 50 25 0 6 4 2 0 10 1000 10 800 15 5 020 600 400 200 0 5 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 25 0 6 8 410 2 1 10 100 0.4 0.6 0.5 0.8 1 0.1 10 1000 1 25 100 125 75 150 50 0.7 0.9 10 12 14 i d = 6 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 20 v single pulse t c = 25 c v ds = 50 v i d = 6 a v gs = 10 v v gs = 0 v t j = 25 c i d = 6 a t r t d(off) t d(on) t f r ds(on) limit q t q 2 q 1 10 ms 1 ms 100 m s dc v gs v ds thermal limit package limit 500 400 300 200 100 0 v ds , drain?to?source voltage (volts) v ds 100 175
ntp6n50 http://onsemi.com 5 1 0.1 0.01 0.00001 1 0.1 0.01 0.001 0.0001 10 r(t), effective transient thermal response (normalized) t, time (s) normalized to r q jc at steady state figure 13. thermal response
ntp6n50 http://onsemi.com 6 package dimensions to?220 three?lead to?220ab case 221a?09 issue aa style 5: pin 1. gate 2. drain 3 source notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j
ntp6n50 http://onsemi.com 7 notes
ntp6n50 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4?32?1 nishi?gotanda, shinagawa?ku, tokyo, japan 141?0031 phone : 81?3?5740?2700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntp6n50/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800?282?9855 toll free usa/canada
|
