gbu8a thru gbu8m vishay general semiconductor document number: 88616 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for monitor, tv, printer, power supply, switching mode power supply, adapter, audio equipment and home appliances applications. mechanical data case: gbu epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) primary characteristics i f(av) 8.0 a v rrm 50 v to 1000 v i fsm 200 a i r 5 a v f 1.0 v t j max. 150 c case style gbu notes: (1) unit case mounted on aiuminum plate heatsink (2) units mounted on p.c.b. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gbu8a gbu8b gbu8d gbu8g gbu8j gbu8k gbu8m unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current at t c = 60 c (1) t a = 40 c (2) i f(av) 8.0 3.9 a peak forward surge current single sine-wave super-imposed on rated load i fsm 200 a rating for fusing (t < 8.3 ms) i 2 t 166 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gbu8a thru gbu8m vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88616 revision: 15-dec-08 2 notes: (1) units case mounted on aiuminum plate heatsink (2) units mounted in free air, no heatsink on p.c.b., 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm) lead length (3) recommended mounting position is to bol t down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gbu8a gbu8b gbu8d gbu8g gbu8j gbu8k gbu8m unit maximum instantaneous forward voltage drop per diode 8.0 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4 v, 1 mhz c j 211 94 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gbu8a gbu8b gbu8d gbu8g gbu8j gbu8k gbu8m unit typical thermal resistance r ja (2) r jc (1)(3) 20 4.0 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode gbu8j-e3/45 3.857 45 20 tube gbu8j-e3/51 3.857 51 250 paper tray figure 1. derating curve output rectified current 0 50 100 150 0 2.0 4.0 6.0 8 .0 25 75 125 a v erage for w ard o u tp u tc u rrent (a) temperat u re (c) heatsink mo u nting, t c p.c.b. mo u nting, t a 0.47 x 0.47" (12 x 12 mm) copper pads 0.375" (9.5 mm) lead length 60 hz resisti v e or ind u cti v e load figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 50 100 150 200 250 t j = 150 c 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
gbu8a thru gbu8m vishay general semiconductor document number: 88616 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 1 100 10 0.1 instantaneo u sfor w ard c u rrent (a) instantaneo u sfor w ard v oltage ( v ) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 100 0.01 0.1 1 10 100 60 8 0 1000 50 - 400 v 600 - 1000 v t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 0.1 1 10 100 10 100 1000 50 - 400 v 600 - 1000 v t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 100 0.01 0.1 1 10 100 0.1 1 10 t - heating time (s) transient thermal impedance (c/ w ) case type gbu polarity sho w n on front side of case, positi v e lead b y b e v eled corner 0.125 (3.2) x 45 chamfer 0.0 8 5 (2.16) 0.065 (1.65) 0.020 r (typ.) 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) r . 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.0 8 0 (2.03) 0.065 (1.65) 0.210 (5.33) 0.190 (4. 8 3) 0.140 (3.56) 0.130 (3.30) 9 typ. 5 typ. 0.0 8 5 (2.16) 0.075 (1.90) 0.026 (0.66) 0.020 (0.51) 0.310 (7.9) 0.290 (7.4) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) 0.710 (1 8 .0) 0.690 (17.5) 0.100 (2.54) 0.0 8 5 (2.16)
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