 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC2060 transistor (npn) feature power dissipation p cm : 0.75 w (tamb=25 ) collector current i cm : 1 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 32 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb =40v , i e =0 0.5 a emitter cut-off current i ebo v eb =4v , i c =0 0.1 a dc current gain h fe(1) v ce =3v, i c = 100ma 80 400 collector-emitter saturation voltage v ce(sat) i c = 500m a, i b = 50ma 0.4 v to-92mod 1. emitter 2. collector 3. base 123 2SC2060 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
Price & Availability of 2SC2060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |