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200 5 -11-07 rev. 2.3 page 1 spb21N50C3 cool mos? power transistor v ds @ t j max 560 v r ds ( on ) 0.19 ? i d 21 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance pg-to263 marking 21N50C3 type package ordering code spb21N50C3 p g-to263 q67040-s4566 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 21 13.1 a pulsed drain current, t p limited by t j max i d p uls 63 a avalanche energy, single pulse i d =10a, v dd =50v e as 690 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =21a, v dd =50v e ar 1 avalanche current, repetitive t a r limited by t j max i ar 21 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 208 w spb operating and storage temperature t j , t st g -55...+150 c reverse diode dv/dt dv/dt 15 v/ns 7) free datasheet http:///
200 5 -11-07 rev. 2.3 page 2 spb21N50C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 21 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.6 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.6 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, reflow soldering, msl1 1.6 mm (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =21a - 600 - gate threshold voltage v gs ( th ) i d =1000 a, v gs =v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =13.1a t j =25c t j =150c - - 0.16 0.54 0.19 - gate input resistance r g f =1mhz, open drain - 0.53 - free datasheet http:/// 200 5 -11-07 rev. 2.3 page 3 spb21N50C3 electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =13.1a - 18 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 2400 - pf output capacitance c oss - 1200 - reverse transfer capacitance c rss - 30 - effective output capacitance, 5) energy related c o(er) v gs =0v, v ds =400v - 87 - effective output capacitance, 6) time related c o(tr) - 181 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =21a, r g =3.6 - 10 - ns rise time t r - 5 - turn-off delay time t d(off) - 67 - fall time t f - 4.5 - gate charge characteristics gate to source charge q gs v dd =380v, i d =21a - 10 - nc gate to drain charge q gd - 50 - gate charge total q g v dd =380v, i d =21a, v gs =0 to 10v - 95 - gate plateau voltage v ( plateau ) v dd =380v, i d =21a - 5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 soldering temperature for to-263: 220c, reflow 5 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 6 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 7 i sd <=i d , di/dt<=200a/us, v dclink =400v, v peak 200 5 -11-07 rev. 2.3 page 5 spb21N50C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 200 w 240 spp21N50C3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 w 35 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc free datasheet http:/// 200 5 -11-07 rev. 2.3 page 6 spb21N50C3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 10 20 30 40 50 a 70 i d vgs = 6v vgs = 5.5v vgs = 5v vgs = 4.5v vgs = 4v vgs = 20v vgs = 7v vgs = 6.5v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 5 10 15 20 25 30 a 40 i d vgs = 5v vgs = 4.5v vgs = 4v vgs = 20v vgs = 7v vgs = 6v vgs = 5.5v free datasheet http:/// 200 5 -11-07 rev. 2.3 page 7 spb21N50C3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 25 30 a 40 i d 0.3 0.6 0.9 1.5 r ds(on) vgs = 4v vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 13.1 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 spp21N50C3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 v 10 v gs 0 10 20 30 40 50 a 70 i d tj = 150c tj = 25c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 21 a pulsed 0 20 40 60 80 100 nc 140 q gate 0 2 4 6 8 10 12 v 16 spp21N50C3 v gs 0,8 v ds max ds max v 0,2 free datasheet http:/// 200 5 -11-07 rev. 2.3 page 8 spb21N50C3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp21N50C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 5 10 a 20 i ar tj(start)=25c tj(start)=125c 15 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 300 350 400 450 500 550 600 mj 750 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spp21N50C3 v (br)dss free datasheet http:/// 200 5 -11-07 rev. 2.3 page 9 spb21N50C3 17 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 4 10 5 10 6 hz f 0 100 200 300 w 500 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c ciss coss crss 19 typ. c oss stored energy e oss = f ( v ds ) 0 50 100 150 200 250 300 350 400 v 500 v ds 0 2 4 6 j 10 e oss free datasheet http:/// 200 5 -11-07 rev. 2.3 page 10 spb21N50C3 definition of diodes switching characteristics free datasheet http:/// 5 11-07 rev. 2.3 p d j h 6 3 %21 1 & |