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this is information on a product in full production. november 2012 doc id 022863 rev 2 1/17 17 STF15N65M5, stfi15n65m5, stp15n65m5 n-channel 650 v, 0.308 typ., 11 a mdmesh? v power mosfet in to-220fp, i 2 pakfp and to-220 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v ds @ t jmax r ds(on) max i d STF15N65M5 710 v < 0.34 11 a stfi15n65m5 stp15n65m5 to-220 to-220fp i 2 pakfp 1 2 3 1 2 3 tab 1 2 3 !-v $4!" ' 3 table 1. device summary order codes marking package packaging STF15N65M5 15n65m5 to-220fp tu b e stfi15n65m5 i 2 pakfp stp15n65m5 to-220 www.st.com
contents STF15N65M5, stfi15n65m5, stp15n65m5 2/17 doc id 022863 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STF15N65M5, stfi15n65m5, stp15n65m5 electrical ratings doc id 022863 rev 2 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp i 2 pa k fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 11 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 6.9 6.9 (1) a i dm (1) drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25 c 85 25 w dv/dt (2) 2. i sd 11 a, di/dt 400 a/s; v dd = 400 v, v ds(peak) < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i 2 pakfp to-220 r thj-case thermal resistance junction-case max 5 1.47 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 2.5 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar ; v dd =50 v) 160 mj
electrical characteristics STF15N65M5, stfi15n65m5, stp15n65m5 4/17 doc id 022863 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 5.5 a 0.308 0.34 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 816 23 2.6 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -70-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -21-pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 5.5 a, v gs = 10 v (see figure 18 ) - 22 5.5 11 - nc nc nc
STF15N65M5, stfi15n65m5, stp15n65m5 electrical characteristics doc id 022863 rev 2 5/17 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r (v) t f (i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 7 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 30 8 11 12.5 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 247 2.4 19.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 312 3 19 ns c a
electrical characteristics STF15N65M5, stfi15n65m5, stp15n65m5 6/17 doc id 022863 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am152 8 6v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am152 8 5v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 v g s = 6 v v g s = 7 v v g s = 9, 10 v 25 v g s = 8 v am152 8 7v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 9 v d s = 25 v am152 88 7v1
STF15N65M5, stfi15n65m5, stp15n65m5 electrical characteristics doc id 022863 rev 2 7/17 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =5.5a 25 3 00 200 100 0 400 500 v d s (v) v d s 12 am152 8 9v1 r d s (on) 0. 3 1 0.29 0.27 0.25 0 4 i d (a) ( ) 2 6 0. 33 0. 3 5 v g s =10v 8 10 am1529 3 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am15290v1 e o ss 1 0.5 0 0 100 v d s (v) ( j) 400 1.5 200 3 00 2 2.5 500 600 3 3 .5 4 am15291v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v2 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10 v i d = 5.5 a am05460v2
electrical characteristics STF15N65M5, stfi15n65m5, stp15n65m5 8/17 doc id 022863 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =7a v dd =400v eon eoff 60 v g s =10v 8 0 50 100 120 am15292v1
STF15N65M5, stfi15n65m5, stp15n65m5 test circuits doc id 022863 rev 2 9/17 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data STF15N65M5, stfi15n65m5, stp15n65m5 10/17 doc id 022863 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STF15N65M5, stfi15n65m5, stp15n65m5 package mechanical data doc id 022863 rev 2 11/17 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STF15N65M5, stfi15n65m5, stp15n65m5 12/17 doc id 022863 rev 2 figure 23. to-220fp drawing 7012510_rev_k_b
STF15N65M5, stfi15n65m5, stp15n65m5 package mechanical data doc id 022863 rev 2 13/17 figure 24. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
package mechanical data STF15N65M5, stfi15n65m5, stp15n65m5 14/17 doc id 022863 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
STF15N65M5, stfi15n65m5, stp15n65m5 package mechanical data doc id 022863 rev 2 15/17 figure 25. to-220 type a drawing 00159 88 _typea_rev_ s
revision history STF15N65M5, stfi15n65m5, stp15n65m5 16/17 doc id 022863 rev 2 5 revision history table 12. document revision history date revision changes 05-mar-2012 1 first release. 09-nov-2012 2 ? the part number stb15n65m5 has been moved to a separate datasheet. ? added section 2.1: electrical characteristics (curves) . ? minor text changes.
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