k i semiconductor low frequency amplifier medium speed switching absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test conditions i cbo collector cut - off current 100 na v cb = 6 0v, i e =0 i ebo emitter cut - off current 100 na v eb =5v, i c =0 h fe (1) dc current gain 4 0 4 00 v ce = 2 v, i c = 50 m a v ce(sat) collector - emitter saturation voltage 0.2 0. 4 v i c = 5 00ma, i b = 5 0ma v be(sat) base - emitter saturation voltage 0.86 1. 1 v i c = 5 00ma, i b = 5 0ma bv cbo collector - base breakdown voltage 80 v i c = 100 a, i e =0 bv ceo collector - emitter breakdown voltage 6 0 v i c =1 0 ma, i b =0 bv ebo emitter - base breakdown voltage 8 v i e =10 a i c =0 f t current gain - bandwidth product 30 50 mhz v ce =10v, i c = 50 m a cob output capacitance 8 pf v cb =10v, i e =0 f=1mhz fe classification r o y gr 4 0 8 0 7 0 1 40 12 0 2 40 240 4 00 t stg j c cbo ceo ebo c D D D c 1008 n p n s i l i c o n t r a n s i s t o r
k i semiconductor c 1008
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