WPM3012 single p-channel, -30v, -3.1a, power mosfet descriptions the WPM3012 is p-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM3012 is pb-free and halogen-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23 pin configuration (top view) w32* w32 = device code * = month (a~z) marking order information device package shipping WPM3012-3/tr sot-23 3000/reel&tape v ds (v) rds(on) (
) 0.058@ v gs = 10v -30 0.080@ v gs = 4.5v d 3 gs 1 2 3 2 1 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -30 gate-source voltage v gs 20 v t a =25c -3.1 -2.9 continuous drain current a t a =70c i d -2.5 -2.3 a t a =25c 0.9 0.8 maximum power dissipation a t a =70c p d 0.6 0.5 w t a =25c -2.8 -2.6 continuous drain current b t a =70c i d -2.2 -2.1 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.5 0.4 w pulsed drain current c i dm -15 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 105 130 junction-to-ambient thermal resistance a steady state r ja 120 155 t ? 10 s 130 160 junction-to-ambient thermal resistance b steady state r ja 145 190 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. product specification WPM3012 sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -30 v zero gate voltage drain current i dss v ds = -24v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -1.5 -1.9 -2.5 v v gs = -10v, i d = -3.1a 58 68 drain-to-source on-resistance b, c r ds(on) v gs = -4.5v, i d = -2.8a 80 95 m ? forward transconductance g fs v ds = -5 v, i d =-5.0a 8.2 s capacitances, charges input capacitance c iss 654 output capacitance c oss 67 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -20v 56 pf total gate charge q g(tot) 1.55 threshold gate charge q g(th) 2.03 gate-to-source charge q gs 3.15 gate-to-drain charge q gd v gs = -10 v, v ds = -15v, i d = -3.1a 12.9 nc switching characteristics turn-on delay time td(on) 9.6 rise time tr 4.0 turn-off delay time td(off) 34.8 fall time tf v gs = -10 v, v ds = -15 v, r l =5 ? , r g =15 ? 7.2 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -1.0a -0.8 -1.5 v WPM3012 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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