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october 2006 rev 5 1/15 15 stp8nk85z STF8NK85Z n-channel 850v - 1.1 ? - 6.7a - to-220 /to-220fp zener - protected supermesh? power mosfet general features extremely high dv/dt capability 100% avalange tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets including revolutionary mdmesh? products. applications switching application internal schematic diagram type v dss (@tjmax) r ds(on) i d stp8nk85z 850 v < 1.4 ? 6.7 a STF8NK85Z 850 v < 1.4 ? 6.7 a to-220 1 2 3 to-220fp www.st.com order codes part number marking package packaging stp8nk85z p8nk85z to-220 tube STF8NK85Z f8nk85z to-220fp tube obsolete product(s) - obsolete product(s)
contents stp8nk85z - STF8NK85Z 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z electrical ratings 3/15 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit to-220 to-220fp v ds drain-source voltage (v gs = 0) 850 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 6.7 6.7 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100c 4.3 4.3 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 26.7 26.7 (1) a p tot total dissipation at t c = 25c 150 35 w derating factor 1.20 0.28 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 4000 v dv/dt (3) 3. i sd 6.7 a, di/dt 200a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s; tc= 25c) - 2500 v t j t stg max operating junction temperature storage temperature -55 to 150 c table 2. thermal data symbol parameter value unit to-220 to-220fp r thj-case thermal resistance junction-case max 0.83 3.6 c/w r thj-amb thermal resistance juncti on-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 6.7 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 350 mj obsolete product(s) - obsolete product(s)
electrical ratings stp8nk85z - STF8NK85Z 4/15 1.1 protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have spec ifically been designed to enhance not only the device?s esd capability, but also to make them safely abs orb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-eff ective intervention to protect the device?s integrity. these integrated zener diodes th us avoid the usage of external components. table 4. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z electrical characteristics 5/15 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma, v gs = 0 850 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 33.754.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.35 a 1.1 1.4 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15v, i d = 3.35 a 6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1870 190 44 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance v ds =0v, v ds = 0v to 680v 75 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 425 v, i d = 3.35 a, r g = 4.7 ?, v gs = 10 v (see figure 18 ) 26 19 58 18 ns ns ns ns t r(voff) t r t c off-voltage rise time fall time cross-over time v dd = 680 v, i d = 6.7 a, r g = 4.7 ?, v gs = 10 v (see figure 20 ) 12 10 24 ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 680 v, i d = 6.7 a, v gs = 10 v (see figure 19 ) 60 12 35 84 nc nc nc obsolete product(s) - obsolete product(s)
electrical characteristics stp8nk85z - STF8NK85Z 6/15 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% source-drain current source-drain current (pulsed) 6.7 26.7 a a v sd (2) 2. pulse width limited by safe operating area forward on voltage i sd = 6.7 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.7 a, di/dt = 100 a/s v dd = 35 v, tj = 25c (see figure 20 ) 530 4.5 17 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.7 a, di/dt = 100 a/s v dd = 35 v, tj = 150c (see figure 20 ) 690 6.4 17 ns c a obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z electrical characteristics 7/15 2.1 electrical characteristi cs (curves) figure 1. safe operating area for to-220 figure 2. thermal impedance for to-220 figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. output characterisics figure 6. transfer characteristics obsolete product(s) - obsolete product(s)
electrical characteristics stp8nk85z - STF8NK85Z 8/15 figure 7. transconductancez figure 8. static drain-source on resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. normalized gate threshold voltage vs temperature figure 12. normalized b vdss vs temperature obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z electrical characteristics 9/15 figure 13. normalized on resistance vs temperature figure 14. source-drain diode forward characteristic figure 15. avalanche energy vs temperature obsolete product(s) - obsolete product(s)
test circuit stp8nk85z - STF8NK85Z 10/15 3 test circuit figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z package mechanical data 11/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com obsolete product(s) - obsolete product(s)
package mechanical data stp8nk85z - STF8NK85Z 12/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z package mechanical data 13/15 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data obsolete product(s) - obsolete product(s)
revision history stp8nk85z - STF8NK85Z 14/15 5 revision history table 8. revision history date revision changes 02-mar-2005 1 first release 16-may-2005 2 modified value in table 7 08-sep-2005 3 final datasheet 09-feb-2006 4 ecopack label 20-sep-2006 5 new template, no content change obsolete product(s) - obsolete product(s)
stp8nk85z - STF8NK85Z 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)

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