v ceo 50 v v cbo 60 v v ebo 5.0 v i c 150 ma total device dissipation fr-5 board (note1) t a = 25 o c junction and storage temperature description data sheet npn epitaxial planar transistor FMBT1815 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current (continuous) symbol value units p d 125 mw t j , t stg -55 to 150 o c mechanical dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3 1 2 3 2 3 1 electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = 1.0ma) collector - base breakdown voltage (i c = 0.1ma) emitter - base breakdown voltage (i e = 0.01ma) collector cutoff current (v cb = 60v) emitter cutoff current (v eb = 5.0v) dc current gain (i c = 2.0 ma, v ce = 6.0 v)* (i c = 150 ma, v ce = 6.0 v) collector - emitter saturation voltage (i c = 100 ma, i b = 10 ma) base - emitter saturation voltage (i c = 100 ma, i b = 10 ma) current - gain - bandwidth product (i c = 1.0 ma, v ce = 10 v, f = 100 mhz) output capacitance (v cb = 10 v, f = 1.0 mhz) v br(ceo) 50 --- v v br(cbo) 60 --- v v br(ebo) 5.0 --- v i cbo --- 0.1 m a i ebo --- 0.1 m a h fe --- 120 600 25 --- v ce(sat) vdc --- 0.25 v be(sat) vdc --- 1.0 f t 80 --- mhz c ob --- 3.5 pf * classification of h fe rank c4y c4g c4b range 120-240 200-400 350-600
data sheet FMBT1815 npn epitaxial planar transistor
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