1 p-channel 60 v (d-s) mosfet fe atures ? h alogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis te ste d ? compliant to rohs directive 2002/95/ec applications ?po w er switch ? load switch in high current applications ? dc/dc converters notes: a. duty cycle ? 1 % . b. see soa curve for volta ge derating. c. whe n mounted on 1" square pcb (fr-4 material). product summ ary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) - 60 0.06 00 at v gs = - 10 v - 30 67 0.08 50 at v gs = - 4.5 v - 24 absolute maximum ratings (t c = 25 c, unless otherwise noted) pa rameter sym bol li mit uni t dr ain-source voltage v ds - 60 v gate -source v oltage v gs 20 continuous d r ain current (t j = 150 c ) t c = 25 c i d - 30 a t c = 70 c - 29 pulsed dr a in current (t = 300 s) i dm - 100 a v alanche c urrent i as - 32 single av alanch e energy a l = 0.1 mh e as 51 mj max i mum power dissipation a t c = 25 c p d 41.7 b w t a = 25 c c 2.1 oper ating junction and storage temperature range t j , t stg - 55 to 1 50 c thermal resistance ratings pa rameter sy mbol li mit unit junction-to-ambient (pcb mount) c r thj a 60 c/ w j unction-to-case (drain) r thjc 3 t o-220ab t op vi e w gd s s g d p-channel mosfet www.din-tek.jp dt p 3006
2 not e s: a. p ulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. indep endent of ope rating temperature. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications (t j = 2 5 c, unless otherwise noted) pa ram e ter symb ol test conditions min. typ. max. un it static drain-source breakdown v oltage v ds v ds = 0 v, i d = - 250 a - 60 v gate th reshold v oltage v gs(t h) v ds = v gs , i d = - 250 a - 1 - 2. 5 gate-body leakage i gss v ds = 0 v, v gs = 2 0 v 250 na zero gate voltage drain current i dss v ds = - 60 v , v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v , v gs = 0 v , t j = 15 0 c - 250 on-state dr ain current a i d(on ) v ds ?? - 10 v , v gs = - 10 v - 30 a drain-source on-state re sista nce a r ds(o n ) v gs = - 10 v, i d = - 14 a 0 .055 0.060 ? v gs = - 4.5 v, i d = - 12 a 0.075 0.085 f orward transconductance a g fs v ds = - 20 v , i d = - 14 a 40 s dynam i c b input capacita n ce c iss v gs = 0 v, v ds = - 20 v , f = 1 mhz 2765 pf output capacitance c oss 330 re verse transfer capacitance c rss 280 t otal gate charge c q g v ds = - 20 v, v gs = - 10 v, i d = - 14 a 67 10 0 nc gate-source charge c q gs 13.5 gate-dr a in charge c q gd 14 ga te re sistance r g f = 1 mhz 0. 5 2.5 5 ? tu r n - o n d e l ay t i m e c t d(on) v dd = - 20 v , r l = 2 ? i d ? - 10 a, v gen = - 10 v , r g = 1 ? 10 2 0 ns rise time c t r 11 20 turn-off delay time c t d(off) 42 63 fall time c t f 12 20 drain- so urce body diode ratings and characteristics t c = 25 c b contin uous current i s - 36 a pulsed current i sm - 100 forw ard v oltage a v sd i f = - 10 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s 3 8 57 ns peak reverse recovery current i rm( rec) 2.3 3.5 a re verse recovery charge q rr 40 6 0 nc www.din-tek.jp dt p 3006
3 typica l c har acteristics (25 c, unless otherwise noted) output char ac teristics transfer characteristics transconductance 0 10 20 30 40 0 0 .5 1 1 .5 2 i d - d r ain current (a) v ds - d rain- to-source voltage (v) v gs = 1 0 v thru 4 v v gs = 3 v 0 0.2 0.4 0.6 0.8 1.0 0 0 .7 1.4 2.1 2.8 3.5 i d - d rai n current (a) v gs - g ate- to-source voltage (v) t c = 25 c t c = 125 c t c = - 5 5 c 0 10 20 30 40 50 0 6 12 18 24 30 g fs - transconductance (s) i d - drain current (a) t c = 125 c t c = 25 c t c = - 55 c on-re s istance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.005 0.010 0.015 0.020 0.025 0.030 0 2 04 06080100 r ds(on ) - o n -resistance () i d - d rai n current (a) v gs = 4.5 v v gs = 10 v 0.010 0.016 0.022 0.028 0.034 0.040 24681 0 r ds(on ) - o n -resistance () v gs - g ate- to-source voltage (v) t j = 12 5 c t j = 25 c i d = 14 a 0 2 4 6 8 10 0 1 42 8425670 v gs - g ate- to-source voltage (v) q g - total gate charge (nc) v ds = 32 v v ds = 10 v v ds = 20 v i d = 14 a www.din-tek.jp dt p 3006
4 ty pi cal ch aracteristics (25 c, unless otherwise noted) sour ce-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource c urrent (a) v sd - s ource- to-drain voltage (v) t j = 150 c t j = 25 c 0 860 1720 2580 3440 4300 0 1 02 03 04 0 c - c apacitance (pf) v ds - d rain- to-source voltage (v) c iss c oss c rss 0.7 1.0 1.3 1.6 1.9 2.2 -5 0 -250 255075100125150 r ds(on ) -on - resistance (normalized) t j - juncti on temperature ( c) i d = 14 a v gs = 10 v v gs = 4. 5 v threshold volt age drain source breakdown vs. junction temperature current derating 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 v gs( t h) (v) t j -te m perature ( c) i d = 250 a 43 45 47 49 51 - 50 - 25 0 25 50 75 100 125 150 v ds (v) dr ai n-to-source voltage t j -t e m perature ( c) i d = 250 a 0 10 20 30 40 0 25 50 75 100 125 150 i d - drai n current (a) t c - c ase temperatur e ( c) www.din-tek.jp dt p 3006
5 typica l c har acteristics (25 c, unless otherwise noted) single pulse avalan che current capability vs. time 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 i dav (a) time (s) t j = 2 5 c t j = 150 c safe oper ating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - d r ain current (a) v ds - d rain- to-source voltage (v) * v gs > mi ni mum v gs at which r ds(on) is specified dc, 1 s, 100 ms limited by r ds(o n) * 1 ms t c = 25 c sin g le pulse bvdss limited 10 ms 100 s normalized t h ermal transient impedance, junction-to-case square wa v e pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 11 0 10 -1 normaliz ed ef fective transient thermal impedance 0.2 0.1 duty cycle = 0.5 30 0.02 0.05 single pulse www.din-tek.jp dt p 3006
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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