2000. 2. 28 1/2 semiconductor technical data BC337 epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features high current : i c =800ma. dc current gain : h fe =100 630 (v ce =1v, i c =100ma). for complementary with pnp type bc327. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. collector 2. base 3. emitter + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v collector current i c 800 ma emitter current i e -800 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =45v, i e =0 - - 100 na dc current gain (note) h fe v ce =1v, i c =100ma 100 - 630 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 0.7 v base-emitter voltage v be(on) v ce =1v, i c =300ma - - 1.2 v transition frequency f t v ce =5v, i c =10ma, f=100mhz - 100 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 16 - pf note : h fe classification none:100 630, 16:100 250, 25:160 400, 40:250 630
2000. 2. 28 2/2 BC337 revision no : 2
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