protection products 1 www.semtech.com protection products - microclamp tm uclamp3301d low voltage clamp tm for esd and cde protection description features schematic & pin configuration revision 01/16/2008 applications mechanical characteristics the clamp tm series of transient voltage suppressors (tvs) are designed to replace multilayer varistors (mlvs) in portable applications such as cell phones, notebook computers, and pdas. they offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to mlvs. they are are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (esd), lightning, electrical fast transients (eft), and cable discharge events (cde). the clamp tm 3301d is constructed using semtech?s proprietary epd process technology. the epd process provides low standoff voltages with significant reduc- tions in leakage currents and capacitance over silicon- avalanche diode processes. they feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. the clamp3301d is in a sod-323 package and will protect one unidirectional line. they give the designer the flexibility to protect one line in applications where arrays are not practical. they may be used to meet the esd immunity require- ments of iec 61000-4-2, level 4 (15kv air, 8kv contact discharge). ? 100 watts peak pulse power (tp = 8/20s) ? transient protection for data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) iec 61000-4-4 (eft) 40a (tp = 5/50ns) iec 61000-4-5 (lightning) 10a (tp = 8/20s) ? small package for use in portable electronics ? suitable replacement for mlvs in esd protection applications ? protects one line ? low clamping voltage ? working voltages: 3.3v 3.3v 3.3v 3.3v 3.3v ? low leakage current ? solid-state silicon-avalanche technology ? eiaj sod-323 package ? molding compound flammability rating: ul 94v-0 ? marking: marking code, cathode band ? packaging: tape and reel ? lead finish: matte tin ? rohs/weee compliant ? cell phone handsets and accessories ? laser diode protection ? notebooks, desktops, & servers ? portable instrumentation ? analog inputs sod-323 (top view) equivalent circuit diagram
2 ? 2008 semtech corp. www.semtech.com protection products protection products uclamp3301d absolute maximum rating electrical characteristics g n i t a rl o b m y se u l a vs t i n u ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e pp k p 0 0 1s t t a w ) s 0 2 / 8 = p t ( t n e r r u c e s l u p k a e pi p p 0 1a ) 2 - 4 - 0 0 0 1 6 c e i r e p m r o f e v a w m b h ( e g a t l o v d s ev p p 0 3v k e r u t a r e p m e t g n i t a r e p ot j 5 2 1 + o t 5 5 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r 3 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p a 2 =5 . 3v e g a t l o v k c a b - p a n sv b s i b s a m 0 5 =8 . 2v t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 2 = t , v 3 . 3 =5 . 0a e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 1 = 2 o t 1 n i p 5 . 4v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 5 = 2 o t 1 n i p 5 . 5v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 0 1 = 2 o t 1 n i p 5 . 9v e g a t l o v d r a w r o f e d o i d g n i r e e t s ) e g a t l o v g n i p m a l c e s r e v e r ( v f i p p s 0 2 / 8 = p t , a 1 = 1 o t 2 n i p 8 . 1v e c n a t i c a p a c n o i t c n u jc j v r z h m 1 = f , v 0 =0 5f p
3 ? 2008 semtech corp. www.semtech.com protection products protection products uclamp3301d typical characteristics non-repetitive peak pulse power vs. pulse time power derating curve 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp clamping voltage vs. peak pulse current normalized capacitance vs. r normalized capacitance vs. r normalized capacitance vs. r normalized capacitance vs. r normalized capacitance vs. r e e e e e v v v v v er er er er er se v se v se v se v se v oltage oltage oltage oltage oltage start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db insertion loss s21 0.01 0.1 1 10 0.1 1 10 100 1000 pulse duration - tp ( s) peak pulse power - p pp (kw) 0 0.2 0.4 0.6 0.8 1 1.2 00.511.522.53 reverse voltage - v r (v) cj(vr) / cj(vr=0) f = 1 mhz 0 1 2 3 4 5 6 7 8 9 10 024681012 peak pulse current - i pp (a) reverse clamping voltage - v c (v) waveform parameters: tr = 8s td = 20s
4 ? 2008 semtech corp. www.semtech.com protection products protection products uclamp3301d device connection options the clamp3301d is designed to protect one i/o, or power supply line. it will present a high impedance to the protected line up to 3.3 volts. it will ?turn on? when the line voltage exceeds 3.5 volts. the device is unidirectional and may be used on lines where the signal polarity is above ground. the cathode band should be placed towards the line that is to be protected. due to the ?snap-back? characteristics of the low voltage tvs, it is not recommended that the i/o line be directly connected to a dc source greater than snap- back votlage (v sb ) as the device can latch on as described below. epd tvs characteristics the clamp3301d is constructed using semtech?s proprietary epd technology. the structure of the epd tvs is vastly different from the traditional pn-junction devices. at voltages below 5v, high leakage current and junction capacitance render conventional ava- lanche technology impractical for most applications. however, by utilizing the epd technology, the clamp3301d can effectively operate at 3.3v while maintaining excellent electrical characteristics. the epd tvs employs a complex nppn structure in contrast to the pn structure normally found in tradi- tional silicon-avalanche tvs diodes. since the epd tvs devices use a 4-layer structure, they exhibit a slightly different iv characteristic curve when compared to conventional devices. during normal operation, the device represents a high-impedance to the circuit up to the device working voltage (v rwm ). during an esd event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (v pt ) is exceeded. unlike a conventional device, the low voltage tvs will exhibit a slight negative resistance characteristic as it conducts current. this characteris- tic aids in lowering the clamping voltage of the device, but must be considered in applications where dc voltages are present. when the tvs is conducting current, it will exhibit a slight ?snap-back? or negative resistance characteris- tics due to its structures. this point is defined on the curve by the snap-back voltage (v sb ) and snap-back device schematic & pin configuration applications information i pp i sb i pt i r v rwm v v pt v c v f i f sb epd tvs iv characteristic curve current (i sb ). to return to a non-conducting state, the current through the device must fall below the i sb (approximately <50ma) and the voltage must fall below the v sb (normally 2.8 volts for a 3.3v device). if a 3.3v tvs is connected to 3.3v dc source, it will never fall below the snap-back voltage of 2.8v and will therefore stay in a conducting state.
5 ? 2008 semtech corp. www.semtech.com protection products protection products uclamp3301d outline drawing - sod-323 c .010 .005 .014 - .000 .012 0.36 - - - 0.35 .018 .008 0.25 0.13 .046 .004 .016 0.30 0.00 0.91 0.45 0.20 - 0.40 1.17 0.10 - - - a h 2. dimensions "e1" and "d" do not include mold flash, protrusions or gate burrs. controlling dimensions are in inches (angles in degrees). notes: 1. side view nom inches dimensions dim b e1 l n e d c a1 a2 a min millimeters max min nom max .097 .102 .107 2.46 2.59 2.72 2 see detail a1 a a2 d a e1 e .060 .044 .065 .050 .013 - 2 1.64 1.28 .070 .054 1.50 1.18 .017 0.33 1.78 1.37 0.43 - l gage plane 0.008 detail land pattern - sod-323 (.085) (2.15) z g y (c) 0.90 .035 0.53 .021 1.25 .049 3.40 .134 x inches dimensions z y x dim c g millimeters this land pattern is for reference purposes only. consult your manufacturing group to ensure your company's manufacturing guidelines are met. notes: 1.
6 ? 2008 semtech corp. www.semtech.com protection products protection products uclamp3301d r e b m u n t r a p g n i k r o w e g a t l o v r e p y t q l e e r e z i s l e e r t c t . d 1 0 3 3 p m a l c uv 3 . 30 0 0 , 3? 7 marking code ordering information 3u microclamp, uclamp, and clamp are marks of semtech corporation h c n a r b n a w i a t 0 8 3 3 - 8 4 7 2 - 2 - 6 8 8 : l e t fx a0 9 3 3 - 8 4 7 2 - 2 - 6 8 8 : h b m g d n a l r e z t i w s h c e t m e s h c n a r b n a p a j 0 5 9 0 - 8 0 4 6 - 3 - 1 8 : l e t 1 5 9 0 - 8 0 4 6 - 3 - 1 8 : x a f h c n a r b a e r o k tl e7 7 3 4 - 7 2 5 - 2 - 2 8 : f6 7 3 4 - 7 2 5 - 2 - 2 8 : x a ) . k . u ( d e t i m i l h c e t m e s 0 0 6 - 7 2 5 - 4 9 7 1 - 4 4 : l e t 1 0 6 - 7 2 5 - 4 9 7 1 - 4 4 : x a f e c i f f o i a h g n a h s t0 3 8 0 - 1 9 3 6 - 1 2 - 6 8 : l e 1 3 8 0 - 1 9 3 6 - 1 2 - 6 8 : x a f l r a s e c n a r f h c e t m e s 0 0 - 2 2 - 8 2 - 9 6 1 ) 0 ( - 3 3 : l e t 8 9 - 2 1 - 8 2 - 9 6 1 ) 0 ( - 3 3 : x a f f o y r a i d i s b u s d e n w o - y l l o h w a s i g a l a n o i t a n r e t n i h c e t m e s . a . s . u e h t n i s r e t r a u q d a e h s t i s a h h c i h w , n o i t a r o p r o c h c e t m e s h b m g y n a m r e g h c e t m e s 3 2 1 - 0 4 1 - 1 6 1 8 ) 0 ( - 9 4 : l e t 4 2 1 - 0 4 1 - 1 6 1 8 ) 0 ( - 9 4 : x a f contact information for semtech international ag
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