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www.irf.com 1 07/09/08 IRF7380PBF hexfet power mosfet high frequency dc-dc converters lead-free benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 v dss r ds(on) max i d 80v 73m @v gs = 10v 3.6a d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recover y dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 42 c/w r ja junction-to-ambient (pcb mount) * ??? 50 2.3 2.0 -55 to + 150 max. 3.6 2.9 29 80 20 0.02

IRF7380PBF 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 80 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.09 ??? v/c r ds(on) static drain-to-source on-resistance ??? 61 73 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 4.3 ??? ??? s q g total gate charge ??? 15 23 q gs gate-to-source charge ??? 2.9 ??? nc q gd gate-to-drain ("miller") charge ??? 4.5 ??? t d(on) turn-on delay time ??? 9.0 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 41 ??? ns t f fall time ??? 17 ??? c iss input capacitance ??? 660 ??? c oss output capacitance ??? 110 ??? c rss reverse transfer capacitance ??? 15 ??? pf c oss output capacitance ??? 710 ??? c oss output capacitance ??? 72 ??? c oss eff. effective output capacitance ??? 140 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.6 a (body diode) i sm pulsed source current ??? ??? 29 a ( bod y diode ) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 50 ??? ns q rr reverse recovery charge ??? 110 ??? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) typ. ??? ??? conditions v ds = 25v, i d = 2.2a i d = 2.2a v ds = 40v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 75 2.2 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 2.2a, v gs = 0v t j = 25c, i f = 2.2a, v dd = 40v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 2.2a v ds = v gs , i d = 250a v ds = 80v, v gs = 0v v ds = 64v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 64v, ? = 1.0mhz v gs = 0v, v ds = 0v to 64v v gs = 10v v dd = 40v i d = 2.2a r g = 24 ?
IRF7380PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 v = i = gs d 10v 3.6a 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 150c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 25c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v t j , junction temperature (c) rds(on), drain-to-source on resistance (normalized)
IRF7380PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 10 12 14 16 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v v ds = 40v v ds = 16v i d = 2.1a v sd , source-to-drain voltage (v) i sd , reverse drain current (a)
IRF7380PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 i , drain current (a) d t a , ambient temperature (c) 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF7380PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 40 80 120 160 200 i d top bottom 1.0a 1.8a 2.2a 0 5 10 15 20 25 30 i d , drain current (a) 50 55 60 65 70 75 80 85 90 95 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 10v 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs, gate -to -source voltage (v) 0 100 200 300 400 500 600 700 800 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 3.6a starting t j , junction temperature (c) e as , single pulse avalanche energy (mj)
IRF7380PBF www.irf.com 7 so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
IRF7380PBF 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 31mh r g = 25 ? , i as = 2.2a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. i sd 2.2a, di/dt 220a/s, v dd v (br)dss ,t j 150c.

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