IPP60R099CPA coolmos tm power transistor features ? worldwide best r ds,on in to220 ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? automotive aec q101 qualified ? green package (rohs compliant) coolmos cpa is specially designed for: ? dc/dc converters for automotive applications maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 1) i d,pulse t c =25 c avalanche energy, single pulse e as i d =11 a, v dd =50 v 800 mj avalanche energy, repetitive t ar 1),2) e ar i d =11 a, v dd =50 v avalanche current, repetitive t ar 1),2) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v power dissipation p tot t c =25 c w operating temperature t j c storage temperature t stg mounting torque m3 and m3.5 screws 60 ncm value 31 19 93 1.2 11 50 20 -40 ... 150 255 -40 ... 150 v ds 600 v r ds(on),max 0.105 q g,typ 60 nc product summary pg-to220-3-1 type package marking IPP60R099CPA pg-to220-3-1 6r099a rev. 2.2 page 1 2009-11-25
IPP60R099CPA maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 1) i s,pulse 93 reverse diode d v /d t 3) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d =1.2 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c --5a gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =18 a, t j =25 c - 0.09 0.105 v gs =10 v, i d =18 a, t j =150 c - 0.24 - gate resistance r g f =1 mhz, open drain - 1.3 - values thermal resistance, junction - ambient value t c =25 c 18 rev. 2.2 page 2 2009-11-25
IPP60R099CPA parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2800 - pf output capacitance c oss - 130 - effective output capacitance, energy related 4) c o(er) - 130 - effective output capacitance, time related 5) c o(tr) - 340 - turn-on delay time t d(on) -10-ns rise time t r -5- turn-off delay time t d(off) -60- fall time t f -5- gate charge characteristics gate to source charge q gs -14-nc gate to drain charge q gd -20- gate charge total q g -6080 gate plateau voltage v plateau - 5.0 - v reverse diode diode forward voltage v sd v gs =0 v, i f =18 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 450 - ns reverse recovery charge q rr -12-c peak reverse recovery current i rrm -70-a 1) pulse width t p limited by t j,max 2) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 3) i sd <= i d , d i /d t <=100a/s, v dclink = 400v, v peak < v (br)dss , t j < t jmax , identical low side and high side switch 4) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. v r =400 v, i f = i s , d i f /d t =100 a/s 5) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. values v gs =0 v, v ds =100 v, f =1 mhz v dd =400 v, v gs =10 v, i d =18 a, r g =3.3 v dd =400 v, i d =18 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 2.2 page 3 2009-11-25
IPP60R099CPA 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z thjc =f( t p ) i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 100 200 300 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 15 30 45 60 75 90 105 120 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 2.2 page 4 2009-11-25
IPP60R099CPA 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =18 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ] c 25 c 150 0 40 80 120 160 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 10 20 30 40 50 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 0.1 0.2 0.3 0.4 0.5 0 1020304050 i d [a] r ds(on) [ ] rev. 2.2 page 5 2009-11-25
IPP60R099CPA 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =18 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =11 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 120 v 400 v 0 2 4 6 8 10 0 102030405060 q gate [nc] v gs [v] 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 200 400 600 800 25 75 125 175 t j [c] e as [mj] rev. 2.2 page 6 2009-11-25
IPP60R099CPA 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 4 8 12 16 20 0 100 200 300 400 500 600 v ds [v] e oss [j] ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 2.2 page 7 2009-11-25
IPP60R099CPA definition of diode switching characteristics rev. 2.2 page 8 2009-11-25
IPP60R099CPA pg-to220-3: outlines dimensions in mm/inches: rev. 2.2 page 9 2009-11-25
IPP60R099CPA published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. a ll rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of condition s or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein any typical values stated herein and/or any information regardi ng the application of the device infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, includin g without limitation warranties of no n ?infringement of intellectual property rights of any third part y information for further information on technology, delivery terms and condi tions and prices pleas e contact your nearest infineon technologies office (www.infineon .com) . warnings due to technical requirements components may contain dangerous substances. for informatio n on the types in question please contact your nearest infineon t echnologies office infineon technologies components may only be used in life-suppo rt devices or systems with th e express written approval of infineon technologies, if a failure of such components can reasonabl y be expected to cause the failure of that life-support device or system, or to affect the safety o r effectiveness of that device or system. life support devices or systems are intended to b e implanted in the human body, or to support and/or maintain and sustain and/or protect human lif e if they fail, it is reasonable to assume that the health of the user or other persons may b e endangered. rev. 2.2 page 10 2009-11-25
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