advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 250v lower on-resistance r ds(on) 55m high speed switching i d 50a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a i dr a i dr(pulse) a p d @t c =25 w w/ i ar avalanche current 3 a t stg t j symbol value units rthj-c thermal resistance junction-case max. 0.833 /w rthj-a thermal resistance junction-ambient max. 40 /w data and specifications subject to change without notice body-drain diode reverse drain current 50 body-drain diode reverse drain peak current 1 200 200329072-1/4 AP95N25W rohs-compliant product parameter rating drain-source voltage 250 pulsed drain current 1 200 gate-source voltage 30 continuous drain current, v gs @ 10v 50 total power dissipation 150 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.2 30 thermal data parameter storage temperature range g d s g d s to-3p a p95n25 from apec provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . the to-3p package is preferred for commercial & industrial applications with higher power level preclusion than to-220 device.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 250 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =25a - - 55 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 - 4 v g fs forward transconductance v ds =10v, i d =25a - 25 - s i dss drain-source leakage current v ds =250v, v gs =0v - - 1 ua i gss gate-source leakage v gs = 30v, v ds =0v - - 0.1 ua q g total gate charge 2 i d =50a - 168 270 nc q gs gate-source charge v ds =200v - 36 - nc q gd gate-drain ("miller") charge v gs =10v - 68 - nc t d(on) turn-on delay time 2 v ds =125v - 50 - ns t r rise time i d =25a - 92 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 250 - ns t f fall time r d =5 - 105 - ns c iss input capacitance v gs =0v - 8370 13400 pf c oss output capacitance v ds =15v - 1505 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =50a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =50a, v gs =0v - 320 - ns q rr reverse recovery charge di/dt=100a/s - 4.7 - c notes: 1.pw Q 10us, duty cycle Q 1% 2.pulse test 3.stch = 25 tch Q 150 this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 AP95N25W this product has been qualified for consumer market. applications or uses as criterial component in life support
ap95n25 w fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 30 60 90 120 150 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0 v 0 20 40 60 80 02468101214 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g = 5.0 v 40 44 48 52 56 0 4 8 12 16 20 v gs gate-to-source voltage (v) r ds(on) (m ) t c =25 o c 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =25a v g =10v 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) i d =25a i d =50a 10v 8.0v 7.0v 6.0v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP95N25W 0 4 8 12 16 0 40 80 120 160 200 240 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 120 v v ds = 160 v v ds = 200 v i d =50a q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 6 11 16 21 26 31 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0 20 40 60 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =10v
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