1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a 1.2v drive nch mosfet rum002n02 z structure z dimensions (unit : mm) silicon n-channel mosfet z applications switching z features 1) fast switching speed. 2) low voltage drive (1.2v) makes this device ideal for portable equipment. 3) drive circuits can be simple. z inner circuit z packaging specifications t2l 8000 rum002n02 type package code basic ordering unit (pieces) tapin g z absolute maximum ratings (ta=25 c) parameter drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature v dss v gss p d ? 2 tch 20 v v ma mw c 8 200 i d i dp ? 1 continuous pulsed ma 400 150 150 tstg c ?55 to +150 symbol limits unit ?1 pw10s, duty cycle1% ?2 each terminal mounted on a recommended land z thermal resistance parameter c / w rth(ch-a) symbol limits unit c hannel to ambient ? each terminal mounted on a recommended land 833 ? vmt3 (1)gate (2)souce (3)drain abbreviated symbol : qr ?1 ?1 esd protection diode ?2 body diode ?2 (1) gate (2) source (3) drain (1) (3) (2)
2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet rum002n02 z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss |y fs | c oss c rss min. ? 20 ? 0.3 ? ? 200 ? ? ? ? ? ? 0.8 25 ? 10 10 10 ? 1.0 1.0 1.2 ? 1.0 1.4 ? ? ? ? av gs = 8v, v ds =0v i d =1ma, v gs =0v v ds =20v, v gs =0v v ds =10v, i d =1ma i d =200ma, v gs =2.5v i d =200ma, v gs =1.8v v ds =10v v ds =10v, i d =200ma v gs =0v f=1mhz v a v ? ? ? ? 1.2 1.6 2.4 4.8 i d =40ma, v gs =1.5v i d =20ma, v gs =1.2v ? ? pf ms pf pf t d(on) ? 5 ? v dd 10v, i d =150ma ns t r ? 10 ? v gs =4.0v ns t d(off) ? 15 ? r l 67? ns t f ? 10 ? r g =10? ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance ? ? pulsed ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 100ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed
3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet rum002n02 z electrical characteristics curves 0.0 0.5 1.0 1 .5 0.00001 0.0001 0.001 0.01 0.1 1 drain current : i d (a) gate-source voltage : v gs (v) fig.3 typical transfer characteristics ta=125c 75c 25c ?25c v ds =10v pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.2v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 0.1 0.2 0.3 0.4 0.5 00.20.40.60.81 v gs = 1.2v v gs = 4.5 v v gs = 2.5 v v gs = 1.8 v v gs = 1.3v v gs = 1.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 ta= 25c pulsed v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.0v 0 0.1 0.2 0.3 0.4 0.5 024 6810 v gs = 1.5v ta=25c pulsed v gs = 1.3v v gs = 2.5v v gs = 1.8v v gs = 1.2v 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.8v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 4.0v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.5v pulsed ta= 125c ta=75c ta=25c ta= - 25c fig .1 typical output characteristics( ) fig .2 typical output char acter istics( ) fig .4 static drain-source on-state resistance vs. drain cur rent( ) fig .5 static drain-source on-state resistance vs. dr ain cur rent( ) fig .7 static drain-source on-state resistance vs. drain cur rent( ) fig .8 static dr ain-source on-state resistance vs. drain current( ) drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] fig.9 static drain-source on-state resistance vs. drain cur rent( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig .6 static drain- sour ce on- state resistance vs. dr ain curr ent( ) drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ]
4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet rum002n02 z measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.1-2 switching waveforms z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit 0 0.5 1 1.5 2 2.5 0246810 ta=25c pulsed i d = 0.02a i d = 0.2a 0.1 1 0.01 0.1 1 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c fig .12 static drain-source on-state resistance vs. gate source voltag e fig .10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : v gs [v] 1 10 100 0.01 0.1 1 10 100 ciss coss crss ta= 25c f=1mhz v gs =0v fig .14 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] source current : i s (a) source-drain voltage : v sd (v) 1 .5 1 0.5 0.0 0.01 0.1 1 ta=125c 75c 25c ?25c fig.11 source current vs. source-drain voltage v gs =0v pulsed 0.01 0.1 10 swithing time : t (ns) drain current : i d (a) 100 1000 1 1 fig.13 switching characteristics t d(off) t r t d(on) t f ta =25c v dd =10v v gs =4v r g =10? pulsed
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