mwt-h7 algaas/ingaas phemt description the mwt-h7 is an algaas/ingaas heterojunction phemt (pseudomorphic-high-electron-mobility transistor) device whose nominal 0.3 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium power in the 500 mhz to 28 ghz frequency range. the device is equally effective for either wideband (e.g. 6-18 ghz) or narrow-band applications. the chip is produced using mwts reliable metal system and all devices are screened to insure reliability. all chips are passivated using mwts patented diamond-like carbon process for increased durability. 50 50 50 50 356 50 100 50 70 241 chip thickness = 125 microns lg rg rd ld cgd gate drain cgs cpg rds cds cpd ri rs ls gm tau source 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 all rights reserved. microwave technology, inc. all specifications subject to change without notice. ordering information 21.5 dbm power output at 12 ghz excellent for high gain and medium power applications 0.3 micron refractory metal/gold gate 250 micron gate width choice of chip and two package types all dimensions in microns features features symbol parameters and conditions freq units min typ p1db ssg nfopt output power at 1 db compression vds= 5.0 v idss= 50ma ids=0.8 small signal gain vds= 5.0 v idss= 50ma ids=0.8 optimum noise figure vds= 3.0 v ids= 10ma 12 ghz 12 ghz 12 ghz dbm db db 20.0 11.0 21.5 12.0 2.0 rf specifications at ta = 25 c idss recommended idss range for optimum p1db ma 50- 86 dc specifications at ta = 25 c symbol param. & conditions units min typ max idss gm vp bvgso bvgdo saturated drain current vds= 3.0 v vgs= 0.0 v transconductance vds= 3.0 v vgs= 0.0 v pinch-off voltage vds= 3.0 v ids= 1.0 ma gate-to-source breakdown volt. igs= -0.4ma, igd= 0 gate-to-drain breakdown volt. igd= -0.4 ma, igs= 0 ma 34 -1.5 106 ms 50 75 -5.0 v v v c/w -5.0 -6.0 -8.0 -8.0 180- 380 rth thermal resistance mwt -h770, h773 dc specifications at ta = 25 c rf specifications at ta = 25 c mwt-h7 chip device equivalent circuit model gate bond wire inductance gate pad capacitance gate resistance gate-source capacitance channel resistance gate-drain capacitance transconductance transit time lg cpg rg cgs ri cgd gm tau 0.089 nh 0.050 pf 0.20 w 0.4 pf 6.9 w 0.04 pf 85.0 ms 3.02 psec source resistance source inductance drain-source resistance drain-source capacitance drain resistance drain pad capacitance drain inductance value parameter rs ls rds cds rd cpd ld 2.6 w 0.025 nh 400.0 w 0.070 pf 3.67 w 0.027 pf 0.159 nh ordering information download additional data www.mwtinc.com mwt-h7 28 ghz medium power/ high gain algaas/ingaas phemt ga gain at optimum noise figure vds= 3.0 v ids= 10ma 12 ghz % 10.0 note: for package information, please see the fapp0002 note from our website at www.mwtinc.com. when placing order or inquiring, please specify bin range, wafer no., if known, and screening level required. chip mwt-h7 package 70 mwt-h770 package 73 mwt-h773
mwt-h7 32 ghz medium power/ high gain algaas/ingaas phemt mwt-h7 32 ghz medium power/ high gain algaas/ingaas phemt 75 c or lower 100 125 75 c or lower 100 125 150 0 2 4 6 8 150 100 50 25 0 vds (v) ids (ma) safe operating limits vs. backside chip mwt-h7 dual bias 50 w output microstrip 50 w input microstrip output reference plane input reference plane 7 mils long 19 mils long 2 mils mwt fph7 2 mils all bond wires are 1.0 mil diameter 20 mils copper heat sink 5 mils below level of microstrip bonding configuration used to obtain ?s? data 50 w output microstrip 50 w input microstrip output reference plane input reference plane 7 mils long 19 mils long 2 mils mwt fph7 2 mils all bond wires are 1.0 mil diameter 20 mils copper heat sink 5 mils below level of microstrip gold blocks 10x10x5 for dual bias, or 25 pf caps for single bias (2 each) mwt-h7 optional bonding gold ridge 5x33x5 mils (2 each) 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 all rights reserved. microwave technology, inc. all specifications subject to change without notice. when placing order or inquiring, please specify bin range, wafer no., if known, and screening level required. for more information on device handling, bin accuracy, or bin selection please see fapp0001 on our website. absolute maximum continuous maximum maximum ratings at ta = 25 c symbol vds tch tst pin parameter units cont max 1 absolute max 2 drain to source voltage channel temperature storage temperature rf input power see safe operating limits c c 80 +175 +175 120 v mw -65 to +150 +150 notes: 1. exceeding any one of these limits in continuous operation may reduce the mean-time-to-failure below the design goals. 2. exceeding any one of these limits may cause permanent damage. maximum ratings at ta = 25 c idss (ma) bin# 1 34- 38 bin selection 2 3 4 5 6 7 8 9 10 11 12 13 14 38- 42 42- 46 46- 50 50- 54 54- 58 58- 62 62- 66 66- 70 70- 74 74- 78 78- 82 82- 86 86- 90 bin accuracy statement 14 90- 94 14 94- 98
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