1N914 vishay semiconductors formerly general semiconductor document number 88112 www.vishay.com 13-may-02 1 small-signal diode features ?silicon epitaxial planar diode ?for general purpose and switching mechanical data case: do-35 glass case weight: approx. 0.13g packaging codes/options: f2/10k per ammo tape (52mm tape), 50k/box f3/10k per 13 reel (52mm tape), 50k/box maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit peak reverse voltage v rm 100 v average rectified current i f(av) 75 ma power dissipation at t amb = 25 cp tot 500 mw junction temperature t j 200 c electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit forward voltage drop v f i f = 10ma 1.0 v reverse current i r v r = 20v 25 na v r = 75v 5.0 a reverse recovery time t rr i f = i r = 10ma, v r = 6v 4.0 ns r l = 100 ? , to i rr = 1ma capacitance c tot v r = 0, f = 1.0mhz 4.0 pf do-204ah (do-35 glass) dimensions in inches and (millimeters)
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