technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/613 t4-lds-0046 rev. 3 (091477) page 1 of 3 devices levels 2N7373 jan jantx jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 80 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 5.0 vdc collector current i c 5.0 adc total power dissipation @ t a = +25c (1) @ t c = +25c (2) p t 4.0 58 w operating & storage junction temperature range t j , t stg -65 to +200 c thermal resistance, junction-to case r jc 3 c/w 1) derate linearly 22.8mw/c for t a > 25c 2) derate linearly 331mw/c for t c > 25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 100madc v (br)ceo 80 vdc collector-emitter cutoff current v ce = 60vdc, v be = 0vdc v ce = 100vdc, v be = 0vdc i ces1 i ces2 1.0 1.0 adc madc collector-emitter cutoff current v ce = 40vdc, i b = 0 i ceo 50 adc emitter-base cutoff current v eb = 4.0vdc v eb = 5.5vdc i ebo1 i ebo2 1.0 1.0 adc madc to-254aa pin 1 = base pin 2 = collector pin 3 = emitter see figure 1
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/613 t4-lds-0046 rev. 3 (091477) page 2 of 3 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on characteristics (3) forward-current transfer ratio i c = 0.05adc, v ce = 5.0vdc i c = 2.5adc, v ce = 5.0vdc i c = 5.0adc, v ce = 5.0vdc h fe1 h fe2 h fe3 50 70 40 --- 200 --- base-emitter non-saturated voltage v ce = 5.0vdc, i c = 2.5adc v be 1.45 vdc base-emitter saturation voltage i c = 2.5adc, i b = 0.25adc i c = 5.0adc, i b = 0.5adc v be(sat)1 v be(sat)2 1.45 2.2 vdc collector-emitter saturation voltage i c = 2.5adc, i b = 0.25adc i c = 5.0adc, i b = 0.5adc v ce(sat)1 v ce(sat)2 0.75 1.5 vdc dynamic characteristics parameters / test conditions symbol min. max. unit common emitter small signal, short circuit forward current transfer ratio v ce = 5vdc, i c = 100madc, f = 1khz h fe 50 magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 0.5adc, v ce = 5vdc, f = 10mhz |h fe | 7.0 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 250 pf safe operating area dc tests t c = +25c, 1 cycle, t = 1s test 1 v ce = 12vdc, i c = 5.0adc test 2 v ce = 32vdc, i c = 1.5adc test 3 v ce = 80vdc, i c = 100madc (3) pulse test: pulse width = 300s, duty cycle 2.0%
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/613 t4-lds-0046 rev. 3 (091477) page 3 of 3 notes: 1. dimensions are in inches. * 2. millimeters are given for general information only. 3. all terminals are isolated from case. 4. in accordance with asme y14.5m, diameters are equivalent to x symbology figure 1: package dimensions dimensions ltr inches millimeters min max min max bl .535 .545 13.59 13.84 ch .249 .260 6.32 6.60 ld .035 .045 0.89 1.14 ll .510 .570 12.95 14.48 lo .150 bsc 3.81 bsc ls .150 bsc 3.81 bsc mhd .139 .149 3.53 3.78 mho .665 .685 16.89 17.40 tl .790 .800 20.07 20.32 tt .040 .050 1.02 1.27 tw .535 .545 13.59 13.84 term 1 base term 2 collector term 3 emitter
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