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  november 2011 doc id 018856 rev 2 1/14 14 STL18NM60N n-channel 600 v, 0.260 , 6 a powerflat? 8x8 hv mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d STL18NM60N 650 v < 0.310 12 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL18NM60N 18nm60n powerflat? 8x8 hv tape and reel www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/
contents STL18NM60N 2/14 doc id 018856 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N electrical ratings doc id 018856 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 12 a i d (1) drain current (continuous) at t c = 100 c 7.5 a i d (2) 2. when mounted on fr-4 board of inch2, 2oz cu drain current (continuous) at t amb = 25 c 2.1 a i d (2) drain current (continuous) at t amb = 100 c 1.2 a i dm (2),(3) 3. pulse width limited by safe operating area drain current (pulsed) 8.4 a p tot (2) total dissipation at t amb = 25 c 3 w p tot (1) total dissipation at t c = 25 c 110 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 105 mj dv/dt (4) 4. i sd 12 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics STL18NM60N 4/14 doc id 018856 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.260 0.310 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1000 60 3 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 225 - pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 13 a, v gs = 10 v (see figure 14 ) - 35 6 20 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time tu r n - o n d e l ay t i m e fall time v dd = 300 v, i d = 13 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 20 22 50 40 - ns ns ns ns www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N electrical characteristics doc id 018856 rev 2 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 12 48 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a, di/dt = 100 a/s v dd = 60 v (see figure 19 ) - 300 4.0 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current v dd = 60 v di/dt = 100 a/s, i sd = 13 a t j =150 c (see figure 19 ) - 360 4.5 25 ns c a www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics STL18NM60N 6/14 doc id 018856 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance ) $      6 $3 6  ! /perationinthisareais ,imitedbymax2 $3on ms s ms 4j?# 4c?# 3ingle pulse ms  !-v 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv ) $    6 $3 6  !  6 6 6 '3 6         !-v ) $    6 '3 6  !    66       $3  !-v v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 r d s (on) 0.260 0.255 0.250 0.245 0 i d (a) ( ) 0.265 0.270 v g s =10v 4 8 2 6 10 12 am097 88 v1 www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N electrical characteristics doc id 018856 rev 2 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =1 3 a 12 3 00 200 100 0 400 500 v d s am055 3 1v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am055 3 2v1 6 '3th    4 * ?# norm               )?! $ !-v 2 $3on   4 * ?# norm                6 6 )! $ '3 !-v 6 3$  ) 3$ ! 6         4 *  ?#   4 * ?# 4 * ?# !-v www.datasheet.co.kr datasheet pdf - http://www..net/
test circuits STL18NM60N 8/14 doc id 018856 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N package mechanical data doc id 018856 rev 2 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. www.datasheet.co.kr datasheet pdf - http://www..net/
package mechanical data STL18NM60N 10/14 doc id 018856 rev 2 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10 www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N package mechanical data doc id 018856 rev 2 11/14 figure 19. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8 222 8 71_rev_b www.datasheet.co.kr datasheet pdf - http://www..net/
package mechanical data STL18NM60N 12/14 doc id 018856 rev 2 figure 20. powerflat? 8x8 hv recommended footprint 7.30 1.05 2.00 7.70 4.40 0.60 footprint www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N revision history doc id 018856 rev 2 13/14 5 revision history table 9. document revision history date revision changes 19-may-2011 1 first release. 03-nov-2011 2 section 4: package mechanical data has been updated. minor text changes. www.datasheet.co.kr datasheet pdf - http://www..net/
STL18NM60N 14/14 doc id 018856 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/


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