november 2011 doc id 018856 rev 2 1/14 14 STL18NM60N n-channel 600 v, 0.260 , 6 a powerflat? 8x8 hv mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d STL18NM60N 650 v < 0.310 12 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0 o w e r & |