?2001 fairchild semiconductor corporation october 2001 fgl60n170d rev. b igbt fgl60n170d fgl60n170d general description fairchild?s insulated gate bipolar transistor ( igbt) provides low conduction and switching losses. fgl60n170d is designed for the induction heating applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 5.0 v @ i c = 60a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fgl60n170d units v ces collector-emitter voltage 1700 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c60 a collector current @ t c = 100 c30 a i cm (1) pulsed collector current 180 a i f diode continuous forward current @ t c = 100 c15 a i fm diode maximum forward current 150 a p d maximum power dissipation @ t c = 25 c 200 w maximum power dissipation @ t c = 100 c80 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.625 c / w r jc (diode) thermal resistance, junction-to-case -- 0.83 c / w r a thermal resistance, junction-to-ambient -- 25 c / w application home appliance, induction heater, ih jar, micro wave oven g c e g c e to-264
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 3ma 1700 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 3.0 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 3.5 5.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 60a , v ge = 15v -5.06.0v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2500 -- pf c oes output capacitance -- 220 -- pf c res reverse transfer capacitance -- 80 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60a, r g = 51 ? , v ge = 15v, resistive load, t c = 25 c -- 100 200 ns t r rise time -- 350 700 ns t d(off) turn-off delay time -- 200 400 ns t f fall time -- 100 300 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v -- 120 180 nc q ge gate-emitter charge -- 20 30 nc q gc gate-collector charge -- 45 70 nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15 a -- 1.35 1.6 v i f = 60 a -- 1.92 2.2 trr diode reverse recovery time i f = 60 a, di/dt = 20 a/us -- 0.6 1.0 us i r inatantaneous reverse current v rrm = 1700v -- 0.3 5 ua c j junction capacitance v ce = 10v, v ge = 0v, f = 1mhz -- 80 -- pf
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d fig 1. typical output chacracteristics fig 2. typical saturation voltage characteristics fig 3. collector to emitter saturation voltage vs. case temperature fig 4. typical capacitance vs. collector to emitter voltage fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 20 40 60 80 100 20v 15v 10v 8v v ge = 6v common emitter t c = 25 o c collector current, i c [a] collector - emitter voltage, v ce [v] 0246810 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector - emitter voltage, v ce [v] 25 50 75 100 125 150 2 3 4 5 6 7 i c = 60a i c = 80a common emitter v ge = 15v i c = 30a collector - emitter voltage, v ce [v] case temperature, t c [ o c] 110 0 1000 2000 3000 4000 5000 common emitter v ge =0v, f=1mhz t c =25 o c cies coes cres capacitance [pf] collector - emitter voltage, v ce [v] 048121620 0 4 8 12 16 20 60a common emitter t c =25 o c 80a 30a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 60a common emitter t c =125 o c 80a 30a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v]
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d fig 7. turn on characteristics vs. gate resistance fig 8. turn off characteristics vs. gate resistance fig 9. switching loss vs. gate resistance fig 10. turn on characteristics vs. collector current fig 11. turn off characteristics vs. collector current fig 12. switching loss vs. collector current 10 100 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c tr td(on) switching time [ns] gate resistance, r g [ ? ] 10 100 100 1000 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c tf td(off) switching time [ns] gate resistance, r g [ ? ] 10 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c eon eoff switching loss [ j] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 90 10 100 1000 common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c tr td(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 90 100 1000 common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c tf td(off) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 90 100 1000 10000 eon common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c eoff switching loss [ j] collector current, i c [a]
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d fig 14. turn off soa characteristics fig 13. gate charge characteristics fig 15. transient thermal impedance of igbt fig 16. typical trr vs. di/dt 0 255075100125150 0 2 4 6 8 10 12 14 16 common emitter r l = 10 ? , v cc = 600v t c = 25 o c gate - emitter voltage, v ge [v] gate charge, qg [nc] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangulasr pulse duration [sec] 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i ecf = 60a t c = 25 o c i rr t rr di/dt [a/ s] reverse recovery time , t rr [ s] 0 10 20 30 40 50 60 70 80 90 100 reverse recovery current , i rr [a] 10 20 30 40 50 60 0.0 0.4 0.8 1.2 i rr t rr di/dt = 20a/ s t c = 25 o c i ecf [a] reverse recovery time , t rr [ s] 0 2 4 6 8 10 12 14 reverse recovery current , i rr [a] 0.1 1 10 100 0123 t c = 125 o c forward voltage, v f [v] forward current, i f [a] fig 17. typical trr vs. forward current fig 18. typical forward voltage drop vs. forward current 0.1 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) collector current, i c [a] collector - emitter voltage, v ce [v] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d fig 20. capacitance vs. reverse voltage for diode fig 19. reverse current vs. reverse voltage 0 300 600 900 1200 1500 1e-3 0.01 0.1 1 10 100 1000 10000 1700 t c = 150 o c t c = 25 o c reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 300 350 400 capacitance, c j [pf] reverse voltage, v r [v]
?2001 fairchild semiconductor corporation fgl60n170d rev. b fgl60n170d package dimension 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 dimensions in millimeters
?2001 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h4 star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx?
product folder - fairchild p/n fgl60n170d - copak discrete igbt fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company fgl60n170d copak discrete igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging general description fairchild's insulated gate bipolar transistor (igbt) provides low conduction and switching losses. fgl60n170d is designed for the induction heating applications. back to top features l high speed switching l low saturation voltage : v ce(sat) = 5.0 v @ i c = 60a l high input impedance l built-in fast recovery diode back to top applications home appliance, induction heater, ih jar, micro wave oven back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads packing method FGL60N170DTU full production $22.00 to-264 3 rail * 1,000 piece budgetary pricing file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/fgl60n170d.html (1 of 2) [26-jul-2002 11:04:24 am]
product folder - fairchild p/n fgl60n170d - copak discrete igbt back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/fgl60n170d.html (2 of 2) [26-jul-2002 11:04:24 am]
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