1/5 january 2002 - ed: 2b n high breakdown voltage capability n high frequency operation n specified turn on switching characteristics n very fast recovery diode n low static and peak forward voltage drop for low dissipation n insulated package: to-220fpac insulating voltage = 2000v dc capacitance = 12pf n planar technology allowing high quality and best electrical characteristics features and benefits high voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for tvs and monitors. this device is packaged in to-220fpac (insulated package). description i f(av) 4a v rrm 1500 v v f (max) 1.5 v trr (max) 170 ns main products characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 1500 v i f(rms) rms forward current 15 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 50 a t stg storage temperature - 65 to 150 c t j maximum operating junction temperature 150 c absolute maximum ratings DTV1500LFP ? (crt horizontal deflection) high voltage damper diode k a to-220fpac DTV1500LFP a k obsolete product(s) - obsolete product(s)
DTV1500LFP 2/5 symbol parameter test conditions value unit min typ max i r* reverse leakage current v r = 1500v tj = 25c 100 m a tj = 125c 100 1000 m a v f** forward voltage drop i f = 4a tj = 25c 1.2 1.7 v tj = 125c 1.1 1.5 pulse test : * t p=5ms , d <2% ** tp = 380 m s, d <2% static electrical characteristics symbol parameter value unit r th(j-c) junction to case thermal resistance 5.8 c/w thermal resistance symbol parameter test conditions value unit min typ max t rr reverse recovery time tj = 25c i f =1a di f /dt = -50a/ m s v r = 30v 130 170 ns t rr reverse recovery time tj = 25c i f = 100ma i r = 100ma i rr = 10ma 850 ns recovery characteristics symbol parameter test conditions value unit min typ max t fr forward recovery time tj = 100c i f =4a di f /dt=80a/ m s v fr =3v 450 ns tj = 25c i f = 6.5a di f /dt=50a/ m s v fr =3v 450 v fp peak forward voltage tj = 100c i f =4a di f /dt=80a/ m s2836v tj = 25c i f =6.5a di f /dt=50a/ m s1317 to evaluate the maximum conduction losses use the following equation : p=1.2xi f(av) + 0.075 x i f 2 (rms) turn-on switching characteristics obsolete product(s) - obsolete product(s)
DTV1500LFP 3/5 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ip(a) pf(av)(w) fig. 1: power dissipation versus peak forward cur- rent (triangular waveform, d = 0.45) 0 25 50 75 100 125 150 0 1 2 3 4 5 tcase(c) if(av)(a) t d =tp/t tp fig. 2: average forward current versus ambient temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 1 2 3 4 5 6 7 8 9 10 vfm(v) ifm(a) typical tj=125c maximum tj=25c maximum tj=125c fig. 3: forward voltage drop versus forward curent 1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 35 40 t(s) im(a) tc=25c tc=100c tc=75c i m t d =0.5 fig. 4: non repetitive surge peak forward current versus overload duration 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 dif/dt(a/s) qrr(c) if=if(av) 90% confidence tj=125c fig. 5: reverse recovery charges versus dif/dt 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 dif/dt(a/s) irm(a) if=if(av) 90% confidence tj=125c fig. 6: reverse recovery current versus dif/dt obsolete product(s) - obsolete product(s)
DTV1500LFP 4/5 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 dif/dt(a/s) vfp(v) if=if(av) 90% confidence tj=125c fig. 7: transient peak forward voltage versus dif/dt 0 20 40 60 80 100 120 140 200 250 300 350 400 450 500 550 600 650 700 dif/dt(a/s) tfr(ns) if=if(av) 90% confidence tj=125c vfr=3v fig. 8: forward recovery time versus dif/dt 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 tj(c) vfp,irm,qrr[tj]/vfp,irm,qrr[tj=125c] vfp irm qrr fig. 9: dynamic parameters versus junction tem- perature 1 10 100 200 1 10 50 vr(v) c(pf) tj=25c f=1mhz fig. 10: junction capacitance versus reverse volt- age applied (typical values) 1e-2 1e-1 1e+0 1e+1 0.1 0.2 0.5 1.0 t(s) k=[zth(j-c)/rth(j-c)] d = 0.1 d = 0.2 d = 0.5 single pulse t d =tp/t tp fig. 11: relative variation of thermal impedance junction to case versus pulse duration obsolete product(s) - obsolete product(s)
DTV1500LFP 5/5 package data to-220fpac ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.018 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 typ. 0.63 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.6 0.386 0.417 l5 2.9 3.6 0.114 0.142 l6 15.9 16.4 0.626 0.646 l7 9.00 9.30 0.354 0.366 dia. 3.00 3.20 0.118 0.126 h l3 l2 l4 l6 g g1 f f1 d e l7 a b dia l5 type marking package weight base qty delivery mode DTV1500LFP DTV1500LFP to-220fpac 1.8g 50 tube n cooling method: c n epoxy meets ul94-v0 n torquevalue: 0.55 m.ntyp (0.7m.nmax) n electrical isolation: 2000v dc n capacitance: 12pf information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com obsolete product(s) - obsolete product(s)
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