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revisions ltr description date (yr-mo-da) approved a add case x which is a 16 lead flat pack. make changes to 1.2.4, 1.3, 3.2.1, 3.2.2, figure 1, slew rate test, and footnote 1 as specified in table i herein. 99-02-10 r. monnin b add table iib and delete figure 1. - ro 01-03-29 r. monnin c add radiation hardened requirements. - ro 01-08-07 r. monnin rev sheet rev sheet rev status rev ccccccccccccc of sheets sheet 12345678910111213 pmic n/a prepared by rick officer defense supply center columbus standard microcircuit drawing checked by rajesh pithadia columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by raymond monnin microcircuit, linear, dual, high speed, low power, feedback amplifier, and agencies of the department of defense drawing approval date 96-08-01 monolithic silicon amsc n/a revision level c size a cage code 67268 5962-95604 sheet 1 of 13 dscc form 2233 apr 97 5962-e542-01 distribution statement a. approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope. this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin. the pin is as shown in the following example: 5962 f 95604 01 q p x ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator. device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s). the device type(s) identify the circuit function as follows: device type generic number circuit function 01 lm6172 dual, high speed, low power, voltage feedback amplifier 1.2.3 device class designator. the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s). the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style p gdip1-t8 or cdip2-t8 8 dual-in-line x gdfp1-g16 16 flat pack with gull wing leads 1.2.5 lead finish. the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings. 1 / supply voltage ( v s )........................................................................................ 36 v differential input voltage................................................................................... 10 v 2/ output short circuit to ground........................................................................... continuous 3/ power dissipation (p d ) ..................................................................................... 1.03 w storage temperature range .............................................................................. -65 c to +150 c junction temperature (t j ) ................................................................................ +150 c lead temperature (soldering, 5 seconds) ........................................................ +260 c thermal resistance, junction-to-case ( q jc ): case p .......................................................................................................... 2 c/w case x ......................................................................................................... 6 c/w thermal resistance, junction-to-ambient ( q ja ): case p .......................................................................................................... 100 c/w still air 46 c/w 500 lfpm air flow case x .......................................................................................................... 124 c/w still air 74 c/w 500 lfpm air flow 1.4 recommended operating conditions. supply voltage (v s ).......................................................................................... 5.5 v to 36 v ambient operating temperature range (t a )...................................................... -55 c to +125 c 1.5 radiation features: 4 / maximum total dose available (dose rate = 50 C 300 rads(si)/s) ....................300 krads 2. applicable documents 2.1 government specification, standards, and handbooks. the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those liste d in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. 1/ stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ differential input voltage is measured at v s = 15v. 3/ continuous short circuit operation can result in exceeding the maximum allowed junction temperature of +150 c. 4/ these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in mil-std-883, method 1019, condition a.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 4 dscc form 2234 apr 97 handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions. the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines. the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections. the terminal connections shall be as specified on figure 1. 3.2.3 radiation exposure circuit. the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 electrical performance characteristics and post irradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table i and shall apply over t he full ambient operating temperature range. 3.4 electrical test requirements. the electrical test requirements shall be the subgroups specified in table iia. the electr ical tests for each subgroup are defined in table i. 3.5 marking. the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark. the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance. for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 5 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol conditions 1/ 2 / 3 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max + 5 v section input offset voltage v io 101 1mv 2,3 3 m,d,p,l,r,f 1 1 input bias current i ib 101 2.5 m a 2,3 3.5 m,d,p,l,r,f 1 2.5 input offset current i io 101 1.5 m a 2,3 2.2 m,d,p,l,r,f 1 1.5 common mode rejection ratio cmrr v cm = 2.5 v 10170 db 2,3 65 m,d,p,l,r,f 170 power supply rejection ratio psrr v s = 15 v to 5 v 10175 db 2,3 70 m,d,p,l,r,f 175 large signal voltage gain a v r l = 1 k w, 4/ 10170 db v out = 1 v 2,3 65 m,d,p,l,r,f 170 r l = 100 w, 4/ 165 v out = 1 v 2,3 60 m,d,p,l,r,f 165 see footnotes at end of table.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions 1/ 2 / 3 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max + 5 v section - continued output voltage swing v o r l = 1 k w 1 01 3.1 -3.1 v 2,3 3 -3 m,d,p,l,r,f 1 3.1 -3.1 r l = 100 w 1 2.5 -2.4 2,3 2.4 -2.3 m,d,p,l,r,f 1 2.5 -2.4 output current (open loop) i outl sourcing, r l = 100 w 5/ 10125 ma 2,3 24 m,d,p,l,r,f 125 sinking, r l = 100 w 5/ 1-24 2,3 -23 m,d,p,l,r,f 1-24 supply current i s both amplifiers 1 01 6 ma 2,3 7 m,d,p,l,r,f 16 + 15 v section input offset voltage v io 101 1.5mv 2,3 3.5 m,d,p,l,r,f 11.5 input bias current i ib 101 3 m a 2,3 4 m,d,p,l,r,f 13 see footnotes at end of table.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 7 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions 1/ 2 / 3 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max + 15 v section - continued input offset current i io 101 2 m a 2,3 3 m,d,p,l,r,f 12 common mode rejection cmrr v cm = 10 v 10170 db ratio 2,3 65 m,d,p,l,r,f 170 power supply rejection ratio psrr v s = 15 v to 5 v 10175 db 2,3 70 m,d,p,l,r,f 175 large signal voltage gain a v r l = 1 k w, 4/ 10175 db v out = 5 v 2,3 70 m,d,p,l,r,f 175 r l = 100 w, 4/ 165 v out = 5 v 2,3 60 m,d,p,l,r,f 165 output voltage swing v o r l = 1 k w 1 01 12.5 -12.5 v 2,3 12.0 -12.0 m,d,p,l,r,f 1 12.5 -12.5 r l = 100 w 1 6.0 -6.0 2,3 5.0 -5.0 m,d,p,l,r,f 1 6.0 -6.0 see footnotes at end of table.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions 1/ 2 / 3 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max + 15 v section - continued output current (open loop) i outl sourcing, r l = 100 w 5/ 10160 ma 2,3 50 m,d,p,l,r,f 160 sinking, r l = 100 w 5/ 1-60 2,3 -50 m,d,p,l,r,f 1-60 supply current i s both amplifiers 1 01 8 ma 2,3 9 m,d,p,l,r,f 18 slew rate 6/ sr a v = 2, v in = 2.5 v t r , t f = 3 ns 4 01 1700 v/ m s unity gain bandwidth 6/ gbw 4 01 80 mhz 1/ +v s = +15 v, -v s = -15 v, v cm = 0 v, and r l > 1 m w . 2/ devices supplied to this drawing have been characterized through all levels m, d, p, l, r, f of irradiation. however, this device is only tested at the f level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measurements for any rha level, t a = +25 c. 3/ these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in mil-std-883, method 1019, condition a. 4/ the large signal voltage gain is the total output swing divided by the input signal required to produce that swing. 5/ output current open loop is guaranteed by the measurement of open loop output voltage swing using 100 w output load. 6/ this parameter is not tested to post irradiation.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 9 dscc form 2234 apr 97 device type 01 case outlines p x terminal number terminal symbol 1 output a nc 2 -input a output a 3 +input a -input a 4 -v s +input a 5 +input b nc 6 -input b -v s 7 output b nc 8 +v s nc 9 --- nc 10 --- +input b 11 --- -input b 12 --- output b 13 --- nc 14 --- +v s 15 --- nc 16 --- nc nc = no connection figure 1. terminal connections.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 10 dscc form 2234 apr 97 3.8 notification of change for device class m. for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m. for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m. device class m devices covered by this drawing shall be in microcircuit group number 49 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection. for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m. a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v. a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v. qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 11 dscc form 2234 apr 97 table iia. electrical test requirements. test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) --- --- --- final electrical parameters (see 4.2) 1,2,3,4 1/ 1,2,3,4 1/ 1,2,3,4 2/ group a test requirements (see 4.4) 1,2,3,4 1,2,3,4 1,2,3,4 group c end-point electrical parameters (see 4.4) 1,2,3 1,2,3 1,2,3 2/ group d end-point electrical parameters (see 4.4) 1,2,3 1,2,3 1,2,3 group e end-point electrical parameters (see 4.4) 111 1/ pda applies to subgroup 1. 2/ delta limits as specified in table iib herein shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters (see table i). table iib. group b end-point electrical parameters. t a = +25 c. test 1/ symbol delta limits unit min max input offset voltage v io -0.25 0.25 mv input bias current i ib -0.50 0.50 m a input offset current i io -0.25 0.25 m a 1/ v s = 5 v and 15 v. 4.4 conformance inspection. technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection. a. tests shall be as specified in table iia herein. b. subgroups 5, 6, 7, 8, 9, 10, and 11 in table i, method 5005 of mil-std-883 shall be omitted.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 12 dscc form 2234 apr 97 4.4.2 group c inspection. the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m. steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v. the steady-state life test duration, test condition and test temperat ure, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection. the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection. group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q, and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing. total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019, condition a, and as specified herein. 4.4.4.1.1 accelerated aging test. accelerated aging tests shall be performed on all devices requiring a rha level greater than 5 krads (si). the post-anneal end-point electrical parameter limits shall be as specified in table i herein and shall be the pre-irradiation end-point electrical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4.2 dose rate burnout. when required by the customer, test shall be performed on devices, sec, or approved test structures at technology qualifications and after any design or process changes which may effect the rha capability of the process. dose rate burnout shall be performed in accordance with test method 1023 of mil-std-883 and as specified herein. 5. packaging 5.1 packaging requirements. the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use. microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability. microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability. device class q devices will replace device class m devices. 6.2 configuration control of smd's. all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal.
standard microcircuit drawing size a 5962-95604 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 13 dscc form 2234 apr 97 6.3 record of users. military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544. 6.4 comments. comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions. the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply. 6.6.1 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m. approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 01-08-07 approved sources of supply for smd 5962-95604 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1/ vendor cage number vendor similar pin 2/ 5962-9560401qpa 27014 lm6172amj-qml 5962-9560401qxa 27014 lm6172amwg-qml 5962-9560401vpa 27014 lm6172amj-qmlv 5962-9560401vxa 27014 lm6172amwg-qmlv 5962f9560401qpa 27014 lm6172amjfqml 5962f9560401qxa 27014 lm6172amwgfqml 5962F9560401VPA 27014 lm6172amjfqmlv 5962f9560401vxa 27014 lm6172amwgfqmlv 1/ the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 27014 national semiconductor corporation 2900 semiconductor drive p.o. box 58090 santa clara, ca 95052-8090 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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