std17ne03l n - channel 30v - 0.034 w - 17a - dpak/ipak stripfet ? power mosfet n typical r ds(on) = 0.034 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization n add suffix "t4" for ordering in tape & reel description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalanche charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n solenoid and relay drivers n motor control, audio amplifiers n dc-dc converters n automotive environment ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain- gate voltage (r gs = 20 k w ) 30 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c17a i d drain current (continuous) at t c = 100 o c12a i dm ( ) drain current (pulsed) 68 a p tot total dissipation at t c = 25 o c35w derating factor 0.23 w/ o c dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 17 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d std17ne03l 30 v < 0.05 w 17 a june 1999 1 3 dpak to-252 (suffix "t4") 3 2 1 ipak to-251 (suffix "-1") 1/9
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 4.28 100 1.5 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 17 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 50 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10v i d = 8.5 a v gs = 10v i d = 8.5 a 0.034 0.049 0.05 0.06 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 17 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =8.5 a 5 11 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 680 160 60 pf pf pf std17ne03l 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 10 a r g =4.7 w v gs = 5 v 15 70 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v i d = 22 a v gs = 5 v 13 6 6 18 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 24 v i d = 20 a r g =4.7 w v gs = 5 v 13 33 55 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 17 68 a a v sd ( * ) forward on voltage i sd = 17 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a di/dt = 100 a/ m s v dd = 15 v t j = 150 o c 40 0.45 2.2 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance std17ne03l 3/9
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations std17ne03l 4/9
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature std17ne03l 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times std17ne03l 6/9
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b std17ne03l 7/9
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e std17ne03l 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . std17ne03l 9/9
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