? 2006 ixys all rights reserved 1 0620 mcc 310 mcd 310 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions maximum ratings i trms , i frms t vj = t vjm 500 a i tavm , i favm t c = 85c; 180 sine 320 a i tsm , i fsm t vj = 45c t = 10 ms (50 hz), sine 8000 a v r = 0 t = 8.3 ms (60 hz), sine 8600 a t vj = t vjm t = 10 ms (50 hz), sine 7000 a v r = 0 t = 8.3 ms (60 hz), sine 7500 a i 2 dt t vj = 45c t = 10 ms (50 hz), sine 320 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 310 000 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 245 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 235 000 a 2 s (di/dt) cr t vj = t vjm repetitive, i t = 960 a 100 a/s f = 50 hz, t p = 200 s v d = 2 / 3 v drm i g = 1 a non repetitive, i t = 320 a 500 a/s di g /dt = 1 a/s (dv/dt) cr t vj = t vjm ; v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30 s 120 w i t = i tavm ;t p = 500 s 60 w p gav 20 w v rgm 10 v t vj -40...+140 c t vjm 140 c t stg -40...+125 c v isol 50/60 hz, rms; t = 1 min 3000 v~ i isol 1 ma; t = 1 s 3600 v~ m d mounting torque (m5) 2.5-5/22-44 nm/lb.in. terminal connection torque (m8) 12-15/106-132 nm/lb.in. weight typical including screws 320 g v rsm v rrm type v dsm v drm v v version 1 version 1 2100 2100 mcc 310-22io1 mcd 310-22io1 data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. features ? international standard package ? direct copper bonded al 2 o 3 -ceramic base plate ? planar passivated chips ? isolation voltage 3600 v~ ? ul registered, e 72873 ? keyed gate/cathode twin pins applications ? motor control ? power converter ? heat and temperature control for industrial furnaces and chemical processes ? lighting control ? contactless switches advantages ? space and weight savings ? simple mounting ? improved temperature and power cycling ? reduced protection circuits i trms = 2x 500 a i tavm = 2x 320 a v rrm = 2100 v thyristor modules thyristor/diode modules 7 6 5 4 2 3 1 mcd mcc 3671 542 31542
? 2006 ixys all rights reserved 2 0620 mcc 310 mcd 310 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values i rrm t vj = t vjm ; v r = v rrm ; v d = v drm 70 ma i drm 40 ma v t , v f i t , i f = 600 a; t vj = 25c 1.40 v v t0 for power-loss calculations only (t vj = 140c) 0.8 v r t 0.82 m v gt v d = 6 v; t vj = 25c 2 v t vj = -40c 3 v i gt v d = 6 v; t vj = 25c 150 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2 / 3 v drm 0.25 v i gd 10 ma i l t vj = 25c; t p = 30 s; v d = 6 v 200 ma i g = 0.45 a; di g /dt = 0.45 a/s i h t vj = 25c; v d = 6 v; r gk = 150 ma t gd t vj = 25c; v d = ? v drm 2s i g = 1 a; di g /dt = 1 a/s t q t vj = t vjm ; i t = 300 a, t p = 200 s; -di/dt = 10 a/s typ. 200 s v r = 100 v; dv/dt = 50 v/s; v d = 2 / 3 v drm q s t vj = 125c; i t , i f = 400 a, -di/dt = 50 a/s 760 c i rm 275 a r thjc per thyristor/diode; dc current 0.112 k/w per module other values 0.056 k/w r thjk per thyristor/diode; dc current see fig. 8/9 0.152 k/w per module 0.076 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type zy 180l (l = left for pin pair 4/5) ul 758, style 1385, type zy 180r (r = right for pin pair 6/7) csa class 5851, guide 460-1-1 dimensions in mm (1 mm = 0.0394") mcc mcd threaded spacer for higher anode/ cathode construction: type zy 250 , material brass fig. 1 gate trigger characteristics fig. 2 gate trigger delay time 20 12 14
? 2006 ixys all rights reserved 3 0620 mcc 310 mcd 310 ixys reserves the right to change limits, test conditions and dimensions. fig. 3 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 i 2 dt versus time (1-10 ms) fig. 4a maximum forward current at case temperature fig. 5 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 6 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature 0.001 0.01 10 4 10 5 10 6 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 i 2 t s t ms t a 2 s i tsm a t vj = 140c t vj = 45c v r = 0 v 80% v rrm t vj = 45c 50 hz t vj = 140c
? 2006 ixys all rights reserved 4 0620 mcc 310 mcd 310 ixys reserves the right to change limits, test conditions and dimensions. fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 t s z thjk k/w t s z thjc k/w 30 dc 30 dc 0 0 fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) r thjc for various conduction angles d: dr thjc (k/w) dc 0.112 180c 0.113 120c 0.114 60c 0.115 30c 0.115 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456 r thjk for various conduction angles d: dr thjk (k/w) dc 0.152 180c 0.154 120c 0.154 60c 0.155 30c 0.155 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456 4 0.04 1.36
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