inchange semiconductor isc product specification isc silicon npn power transistors BUV82/83 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min)-BUV82 = 450v(min)-buv83 high switching speed applications designed for use in converters, inverters, switching regula- tors, motor control system s and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BUV82 850 v ces collector- emitter voltage v be =0 buv83 1000 v BUV82 400 v ceo collector-emitter voltage buv83 450 v v ebo emitter-base voltage 10 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b b base current-continuous 2 a i bm base current-peak 3 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BUV82/83 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUV82 400 v ceo(sus) collector-emitter sustaining voltage buv83 i c = 0.1a ;i b = 0; l=25 mh b 450 v v ce (sat)-1 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 4a; i b = 1.25a b 3.0 v v be (sat)-1 base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.4 v v be (sat)-2 base-emitter saturation voltage i c = 4a; i b = 1.25a b 1.6 v i ces collector cutoff current v ce = v cesmax ;v be = 0 v ce = v cesmax ;v be = 0; t j = 125 1 2 ma i ebo emitter cutoff current v eb = 10v; i c =0 10 ma h fe dc current gain i c = 0.6a; v ce = 5v 22 f t current-gain?bandwidth product i c = 0.2a ; v ce = 10v;f test = 1mhz 6 mhz switching times; resistive load t on turn-on time 0.3 0.6 s t s storage time 2.0 3.5 s t f fall time i c = 2.5a; i b1 = 0.5a;i b2 = -1.0a; v cc = 250v 0.3 0.75 s isc website www.iscsemi.cn 2
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