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sup/SUB75N05-06 vishay siliconix document number: 70292 s-05110?rev. e, 10-dec-01 www.vishay.com 2-1 n-channel 50-v (d-s), 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) 50 0.006 75 d g s n-channel mosfet sup75n05-06 SUB75N05-06 drain connected to tab to-220ab top view gds to-263 s g top view d parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current t c = 25 c 75 a continuous drain current (t j = 175 c) t c = 125 c i d 70 pulsed drain current i dm 240 a avalanche current i ar 75 repetitive avalanche energy b l = 0.1 mh e ar 280 mj t c = 25 c (to-220ab and to-263) 250 c power dissipation t a = 25 c (to-263) d p d 3.7 w operating junction and storage temperature range t j , t stg ?55 to 175 c parameter symbol limit unit pcb mount (to-263) d 40 junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.6 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material). sup/SUB75N05-06 vishay siliconix www.vishay.com 2-2 document number: 70292 s-05110 ? rev. e, 10-dec-01 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 50 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 50 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 50 v , v gs = 0 v, t j = 125 c 50 a dss v ds = 50 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 75 a 0.005 0.006 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 75 a, t j = 125 c 0.010 ds(on) v gs = 10 v, i d = 75 a, t j = 175 c 0.012 forward transconductance a g fs v ds = 15 v, i d = 60 a 30 s dynamic b input capacitance c iss 4500 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 360 total gate charge c q g 85 120 gate-source charge c q gs v ds = 25 v , v gs = 10 v, i d = 75 a 25 nc gate-drain charge c q gd ds , gs d 25 turn-on delay time c t d(on) 20 40 rise time c t r v dd = 25 v, r l = 0.33 20 100 turn-off delay time c t d(off) v dd = 25 v, r l = 0.33 i d 75 a, v gen = 10 v, r g = 2.5 50 100 ns fall time c t f 20 40 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 75 pulsed current i sm 200 a forward voltage a v sd i f = 75 a , v gs = 0 v 1.0 1.4 v reverse recovery time t rr 65 120 ns peak reverse recovery current i rm(rec) i f = 75 a, di/dt = 100 a/ s 5 8 a reverse recovery charge q rr f 0.16 0.48 c notes a. pulse test: pulse width 300 sec, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. sup/SUB75N05-06 vishay siliconix document number: 70292 s-05110 ? rev. e, 10-dec-01 www.vishay.com 2-3 0 2000 4000 6000 8000 0 1020304050 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 50 100 150 200 250 0246810 0 25 50 75 100 125 150 0 20406080 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs ? transconductance (s) g fs 0.000 0.002 0.004 0.006 0.008 0 20 40 60 80 100 120 0 50 100 150 200 01234567 25 c ? 55 c 6 v t c = 125 c v ds = 25 v i d = 75 a v gs = 8, 9, 10 v 7 v v gs = 10 v v gs = 20 v c iss c oss c rss t c = ? 55 c 25 c 125 c 5 v 4 v i d ? drain current (a) sup/SUB75N05-06 vishay siliconix www.vishay.com 2-4 document number: 70292 s-05110 ? rev. e, 10-dec-01 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ? ) ? source current (a) i s 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 75 a t j = 25 c t j = 150 c safe operating area ? drain current (a) i d 500 10 limited by r ds(on) 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 v ds ? drain-to-source voltage (v) 1 0.1 1 10 100 legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. |
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