rx rf front-ends ic s1m8673 1 introduction s1m8673 is an integrated receiver chip intended for use in cellular phones operating in is-95 amps/cdma applications. this device incorporates all the components required to implement the receiver rf front-end except the filter blocks. it has a low noise amplifier (lna) and a mixer. lna has a single-ended input and a single-ended output for the rf surface acoustic wave (saw) filter. rf mixer, of which output is balanced, is followed by an if saw filter. the noise figure, gain, and ip3 of each stage in the receiver chip are optimized to meet the system requirements for amps/cdma mode as per is- 98a. using 0.5um silicon bicmos technology, the s1m8673 has been designed for high performance and low cost applications. the device package and pins are shown in figure 1. a block diagram of the s1m8673 is shown in figure 2. features supports cellular cdma/amps mode. on-chip high iip3 (+4dbm) low noise amplifier. low noise, high iip3 mixer (+4dbm). 3v operation. 20-etssop, or 24-qfn package with exposed paddle. applications cellular cdma/amps hand held phone ordering information device package operating temperature + s1m8673x01-v0t0 20-etssop-bd44 -30 to +80 c + S1M8673X01-G0T0 24-qfn-3.5 4.5 -30 to +80 c +: new product 24-qfn-3.5 4.5 20-etssop-bd44
s1m8673 rx rf front -ends ic 2 block diagram lna lo buffer lna bias mixer bias mixer lna out lna cntl mix in lna in lna ext ind lo in if cdma p if cdma n if amps p if amps n figure 1. s1m8673 block diagram
rx rf front-ends ic s1m8673 3 pin description s1m8673 lna v cc lna cntl lna out lna bias r mix v cc mix bias r mix ext ind mix in sleep lo in 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 lna rf v cc ext gnd lna in lna gnd lna ext ind mod sel if cdma n if cdma p if amps n if amps p figure 2. s1m8673 pin description (20-etssop)
s1m8673 rx rf front -ends ic 4 pin description pin no. pin name type descriptions 1 lna_rf_vcc power supply voltage for lna amplifier core 2 ext_gnd ground 3 lna_in input rf signal input of lna 4 lna_gnd ground 5 lna_ext_ind lna bias pin 6 mod_sel input amps/cdma mode selection 7 if_cdma_n output mixer if output (cdma) 8 if_cdma_p output mixer if output (cdma) 9 if_amps_n output mixer if output (amps) 10 if_amps_p output mixer if output (amps) 11 lo_in input local oscillator power input 12 sleep power down 13 mix_in input mixer rf signal input 14 mix_ext_ind attach external inductor 15 mix_bias_r current control resistor for mixer 16 mix_vcc power supply voltage for mixer 17 lna_bias_r lna current control resistor 18 lna_out output lna output 19 lna_cntl lna gain control 20 lna_vcc power supply voltage for lna bias circuit
rx rf front-ends ic s1m8673 5 absolute maximum ratings characteristic symbol value unit power supply voltage v cc -0.3 to 5.0 v input voltage range v i -0.3 to 5.0 v lna input power p i(lna) + 5.0 dbm power dissipation p d 600 mw operating temperature t opr -30 to +80 c storage temperature t stg -65 to +125 c recommended operating conditions characteristic symbol value unit supply voltage v cc 2.5 to 3.3 v operating temperature ta -30 to +80 c logic 0 0.2 v cc v logic 1 v cc v
s1m8673 rx rf front -ends ic 6 electrical characteristics (t a = 25 c, v cc = 3.0v, plo = -10dbm, input/output externally matched) characteristic test conditions min typ max unit lna frequency range 869 - 894 mhz gain high gain state low gain state @ 885 mhz (vcntl=3v) (vcntl=0v) 14 2 16 4 18 6 db noise figure high gain state low gain state @ 885 mhz (vcntl=3v) (vcntl=0v) 1.8 8 2.2 9 db input return loss - 15 - 10 db output return loss - 15 - 10 db reverse isolation - 35 - 30 db p1db high gain state low gain state @ input (vcntl=3v) (vcntl=0v) - 8 - 8 - 6 - 6 dbm ip3 high gain state low gain state @ input (vcntl=3v) (vcntl=0v) 2 2 4 4 dbm current consumption 8 ma mixer rf frequency range 869 - 894 mhz if frequency 50 - 200 mhz conversion gain cdma mode amps mode 6.5 4.0 7.5 5.0 8.5 6.0 db output impedance cdma amps (differential) (single-ended) 2 1.5 k w noise figure (ssb) cdma mode amps mode 8.0 9.2 9.0 9.5 db lo power - 15 - 10 - 5 db rf input return loss - 15 - 10 db lo input return loss - 15 - 10 iip3 cdma mode amps mode @ input 2 2 4 4 dbm lo to rf isolation - 20 - 15 db current consumption 14 ma
rx rf front-ends ic s1m8673 7 technical description low noise amplifier (lna) the lna is designed to provide low noise figure and high linearity to achieve maximum dynamic range. pin 17, lna bias control pin, is required to connect grounded resistor to decide the lna current. the input and output are logic 0, mathod externally. for handling high level signals, lna provides the low gain state by setting pin 19 to ground. mixer the mixer is designed to operate with very low lo power of -10dbm. the lo port is matched externally to the chip. bias control resistors have to be connected to the pin 15 to adjust the mixer current. the sleep mode is controlled by a signal at pin 12. the supply voltage should be present at all the vcc pins for normal operation. the signal pin assignments and functional pin descriptions are found in table 1. the absolute maximum ratings of the s1m8673 are provided in table 2, the recommended operating conditions are specified in table 3, and electrical specifications are provided in table 4. esd sensitivity the s1m8673 is a class 1 device. the following extreme electrostatic discharge (esd) precautions are required according to the tbd human body model (hbm) or charged device model (cdm) complete esd training program required. protective outer garments. handle device in esd safeguard work area. transport device in esd shielded containers. monitor and test all esd protection equipment . treat the s1m8673 as extremely sensitive to esd since esd sensitivity has not yet been determined for this device.
s1m8673 rx rf front -ends ic 8 passive element value of test circuit element value element value r1 16 k w c64 39 pf r2 11 k w c65 1000 pf r3 1 k w c66 1.8 pf r4 1 k w c67 1000 pf r5 560 w c68 9 pf r6 1.5 k w c81 1000 pf c2 1000 pf c82 1000 pf c4 1000 pf l1 10 nh c6 1000 pf l2 47 nh c8 1000 pf l3 390 nh c10 1000 pf l4 390 nh c14 1000 pf l5 1.8 uh c51 39 pf l6 1.8 uh c52 5.7 pf l7 4.7 nh c54 8 pf l8 8.2 nh c55 8 pf l9 82 nh c56 1000 pf l10 18 nh c57 1000 pf l11 1.8 uh c58 3.3 pf l12 1.8 uh c60 39 pf l13 330 nh c61 1.5 pf t1 1:8 transformer c63 39 pf t2 1:8 transformer notes: 1. transformer: tc8-1 by mini-circuits (see the data book of mini-circuits for more detailed information) 2. high q components are recommended for c51, c52, l1, and l2 to reduce the noise figure. 3. for cascade measurement, rf filter with input and output impedance of 50 w can be inserted between sc2 and sc3.
rx rf front-ends ic s1m8673 9 block test circuit (20tssop) a a v cc v cc gain cntl v v cc a v cc v cc v cc sw1 sw7 c14 c2 l2 l1 c52 c51 sc1 c54 l4 l3 c55 c57 c56 r3 l6 r4 l5 sc5 t1 n2 n1 sc6 t2 n1 n2 c68 c4 c67 l12 r6 r5 l11 l7 c60 c63 l8 c61 l13 c58 c6 sw2 sc3 sw3 c82 r1 l9 c8 r2 c81 c10 c65 c12 sw4 sw5 c64 l10 c66 sc2 sc4 1.6uh 33uf 33uf 1uf (tantalum) a current meter sma type connector 50 w transmission line 1 3 5 7 9 19 17 15 13 11 2 4 6 8 10 20 18 16 14 12 s1m8673 figure 3. package block test circuit (b-type)
s1m8673 rx rf front -ends ic 10 notes
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