? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 1 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? broad bandwidth ? specified from 50 mhz to 20 ghz ? low insertion loss ? high isolation ? rugged silicon glass construction ? low parasitic capacitance and inductance ? lead-free surmount? package ? rugged, fully monolithic ? glass encapsulated construction ? up to +37 dbm c.w. power handling 3 @ +25c ? silicon nitride passivation ? polymer scratch protection description ma-com?s masw-002103-1363 is a surmount? broadband monolithic switch using series and shunt connected silicon pin diodes. this part is designed for use as a moderate signal, high performance switch in applications up to 20 ghz. this sur face mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid mic designs incorporating beam lead and pin diodes that require chip and wire assembly. the masw-002103-1363 is fabricated using m/a- com?s patented hmic? (h eterolithic microwave integrated circuit) proces s, us patent 5,268,310. this process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between elements, this combination of silicon and glass gives hmic devices low loss and high isolation performance through low millimeter frequencies. selective backside metalization is applied producing a surface mount device. the topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. these protective coatings prevent damage to the junction and the anode airbridge during handling and assembly. functional schematic pin configuration 1 1. the exposed pad centered on the package bottom must be connected to rf and dc ground. ordering information 2 part number package MASW-002103-1363OG gel pack masw-002103-1363op pocket tape 2. reference application note m513 for reel size information. pin function j1 rfc j2 rf1 j3 rf2 j1 j2 j3 3. power handling testing performed @ 2ghz
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 2 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. parameter conditions units min. typ. max. insertion loss 6 ghz 13 ghz 20 ghz db ? ? ? 0.55 0.80 1.05 ? ? ? isolation 6 ghz 13 ghz 20 ghz db ? ? ? 52 38 27 ? ? ? return loss 6 ghz 13 ghz 20 ghz db ? ? ? 25 23 23 ? ? ? switching speed 3 ? ns ? 20 ? voltage rating 4 ? v ? ? 50 input 0.1db compression point 2 ghz dbm ? 36 ? electrical specifications: t a = 25c, p in = 0 dbm, z 0 = 50 ? , 20ma/-10v 3. typical switching speed measured fro 10% to 90 % of detected rf signal driven by ttl compatible drivers. 4. maximum reverse leakage current in either the shunt or series pin diodes shall be 10 ma maximum @ -50 volts. handling procedures please observe the following precautions to avoid damage: static sensitivity these devices are rated at class 1a human body. proper esd control techniques should be used when handling these devices. absolute maximum ratings 5,6 parameter absolute maximum operating temperature -65 c to +125 c storage temperature -65 c to +150 c junction temperature +175 c applied reverse voltage |-50 v| rf cw incident power +34dbm cw bias current +25c 20 ma 5. exceeding any one or combination of these limits may cause permanent damage to this device. 6. m/a-com does not recommend sustained operation near these survivability limits. functional schematic max operating conditions for combination rf pwr, dc bias, & temp: 33dbm cw @ 20ma per diode @ 85oc
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 3 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical small signal pe rformance at +25c m asw-002103-1363 return loss, 25degc forward bias (on-arm): -20ma, reverse bias (off- arm): +10v -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 freq [ghz] return loss (db) input j1 t o j2 out put out p ut input j1 to j3 m asw-002103-1363 insertion loss, 25degc forward bias (on-arm): -20ma, reverse bias (off-arm): +10 v -2.00 -1.80 -1.60 -1.40 -1.20 -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0 .0 5.0 10.0 15.0 20 .0 2 5.0 3 0.0 frequency (ghz) insertion loss (db) m asw-002103-1363 isolation, 25degc forward bias (on-arm): -20ma, reverse bias (off-arm): +10 v -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 frequency (ghz) isolation (db) typical power performance at +25c masw-002103-1363 maximum input power curve baseplate temperature fixed @ 25degc 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 insertion loss (db) input power (dbm) 2ghz, 6.7w 10ghz, 3.5w 22ghz, 2w
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 4 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. note: 1. rlc values are for a typical operating frequency of 2 - 18 ghz and bias current of 20ma per diode control level (dc current) at condition of rf output condition of rf output j2 j3 j1-j2 j1-j3 -10v at -20ma +20ma 1 low loss isolation 20ma 1 -10v at -20ma isolation low loss bias control optimal operation of the masw-002103-1363 is achieved by simultaneous application of negative dc voltage and current to the low loss switching arm j2 or j3, and positive dc voltage and current to the remaining switching arm as shown in the applications circuit below. dc return is achieved via j1. in the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased with voltage. in the isolation arm, the shunt diode is forward biased with current and the series diode is reverse biased with voltage. driver connection 1. the voltage applied to the off arm can vary as long as +20ma is applied through the shunt diode on the off arm. applications circuit
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 5 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. unit um masw-002103-1363 outline drawing ? backside footprint topside footprint 340 265 230 265 340 400 270 270 400 1550 2230 1117 265 230 265 235 270 125 100 400 sideview
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 6 hmic tm silicon pin diode spdt switch 50 mhz - 20 ghz m/a-com products preliminary- rev. v5p masw-002103-1363 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. handling procedures attachment to a circuit board is made simple through the use of standard surface mount technol- ogy. mounting pads are conveniently located on the bottom surface of these devices and are re- moved from the active junction locations. these devices are well suited for solder attachment onto hard and soft substrates. the use of 80au/20sn, or rohs compliant solders is recommended. for ap- plications where the average power is 1w, con- ductive silver epoxy may also be used. cure per manufacturers recommended time and tempera- ture. typically 1 hour at 150c. when soldering these devices to a hard substrate, a solder re-flow method is preferred. a vacuum tip pick-up tool and a force of 60 to100 grams applied to the top surface of t he device while placing the chip is recommended. when soldering to soft sub- strates, such as duroid, it is recommended to use a soft solder at the circuit board to mounting pad in- terface to minimize stress due to any tce mis- matches that may exist. position the die so that its mounting pads are aligned with the circuit board mounting pads. solder reflow should not be per- formed by causing heat to flow through the top sur- face of the die to the back. since the hmic glass is transparent, the edges of the mounting pads can be visually inspected through the die after attach- ment is completed. typical re-flow profiles for sn60/pb40 and rohs compliant solders is provided in application note m538 , ?surface mounting instructions? and can viewed on the ma-com website @ www.macom.com
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