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parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 23 i c @ t c = 100c continuous collector current 12 a i cm pulsed collector current 92 i lm clamped inductive load current 92 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 10 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to + 150 t stg storage temperature range irg4bc30u-spbf ultrafast speed igbt insulated gate bipolar transistor e c g n-channel v ces = 600v v ce(on) typ. = 1.95v @v ge = 15v, i c = 12a absolute maximum ratings features ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? industry standard d 2 pak package ? lead-free ? generation 4 igbt's offer highest efficiency available ? igbt's optimized for specified application conditions ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's benefits parameter typ. max. units r jc junction-to-case ??? 1.2 c/w r ja junction-to-ambient, ( pcb mounted,steady-state)* ??? 40 thermal resistance www.irf.com 1 * when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. d 2 pak
irg4bc30u-spbf 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 50 75 i c = 12a q ge gate - emitter charge (turn-on) ? 8.1 12 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) ? 18 27 v ge = 15v t d(on) turn-on delay time ? 17 ? t r rise time ? 9.6 ? t j = 25c t d(off) turn-off delay time ? 78 120 i c = 12a, v cc = 480v t f fall time ? 97 150 v ge = 15v, r g = 23 ? e on turn-on switching loss ? 0.16 ? energy losses include "tail" e off turn-off switching loss ? 0.20 ? mj see fig. 10, 11, 13, 14 e ts total switching loss ? 0.36 0.50 t d(on) turn-on delay time ? 20 ? t j = 150c, t r rise time ? 13 ? i c = 12a, v cc = 480v t d(off) turn-off delay time ? 180 ? v ge = 15v, r g = 23 ? t f fall time ? 140 ? energy losses include "tail" e ts total switching loss ? 0.73 ? mj see fig. 13, 14 l e internal source inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1100 ? v ge = 0v c oes output capacitance ? 73 ? pf v cc = 30v see fig.7 c res reverse transfer capacitance ? 14 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.63 ? v/c v ge = 0v, i c = 1.0ma ? 1.95 2.1 i c = 12a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 2.52 ? i c = 23a see fig.2, 5 ? 2.09 ? i c = 12a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -13 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 3.1 8.6 ? s v ce = 100v, i c = 12a ? ? 250 v ge = 0v, v ce = 600v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current switching characteristics @ t j = 25c (unless otherwise specified) pulse width 80s; duty factor 0.1% pulse width 5.0s, single shot. repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 ? (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature.
irg4bc30u-spbf www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0.1 1 10 100 56789101112 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: triangular wave: clamp voltage: 80% of rated power dissipation = 1.75w duty cycle: 50% t = 125c t = 55c gate drive as specified sink j
irg4bc30u-spbf 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs.case temperature 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 24a i = 12a i = 6.0a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case temperature (c) c v = 15v ge a
irg4bc30u-spbf www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 1020304050 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 12a ce c 0.2 0.3 0.4 0.5 0 102030405060 g total switching losses (mj) r , gate resistance ( ? ) a v = 480v v = 15v t = 25c i = 12a cc ge j c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a i = 6.0a i = 12a i = 24a r = 23 ? v = 15v v = 480v c c c j t , junction temperature (c) g ge cc
irg4bc30u-spbf 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0.0 0.4 0.8 1.2 1.6 0102030 c total switching losses (mj) i , collector-to-emitter current (a) a r = 23 ? t = 150c v = 480v v = 15v g j cc ge 0.1 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j
irg4bc30u-spbf www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v

t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e )

50v driver* 1000v d.u.t. i c c v l

0 - vcc r l icm vcc = 480f pulsed collector current test circuit
irg4bc30u-spbf 8 www.irf.com

dimensions are shown in millimeters (inches) '()"*+,--)./010*+) 2'-*(*'+*+3*4,()-
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irg4bc30u-spbf www.irf.com 9

dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2010

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