to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
notice 1. all information included in this document is current as of th e date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology de scribed in this document for any purpose re lating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or om issions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product depends on the product?s quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as ?specific? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intended where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. ?standard?: computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. ?high quality?: transportation equipment (automobiles, trains, ship s, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specifically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use re nesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of c ontrolled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any fo rm, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
rev.2.00, mar.01.20 05, page 1 of 7 CR02AM-8 thyristor low power use rej03g0351-0200 rev.2.00 mar.01.05 features ? i t (av) : 0.3 a ? v drm : 400 v ? i gt : 100 a ? planar passivation type outline 2 1 3 prss0003ea-a (package name: to-92) 1. cathode 2. anode 3. gate 3 1 2 applications solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications maximum ratings voltage class parameter symbol 8 unit repetitive peak reverse voltage v rrm 400 v non-repetitive peak reverse voltage v rsm 500 v dc reverse voltage v r (dc) 320 v repetitive peak off-state voltage note1 v drm 400 v dc off-state voltage note1 v d (dc) 320 v
CR02AM-8 rev.2.00, mar.01.20 05, page 2 of 7 parameter symbol ratings unit conditions rms on-state current i t (rms) 0.47 a average on-state current i t (av) 0.3 a commercial frequency, sine half wave 180 conduction, ta = 30c surge on-state current i tsm 10 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.4 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 0.1 w average gate power dissipation p g (av) 0.01 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate forward current i fgm 0.1 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 0.23 g typical value notes: 1. with gate to cathode resistance r gk = 1 k ? . electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 0.1 ma tj = 125c, v rrm applied repetitive peak off-state current i drm ? ? 0.1 ma tj = 125c, v drm applied, r gk = 1 k ? on-state voltage v tm ? ? 1.6 v ta = 25c, i tm = 0.6 a, instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25c, v d = 6 v, i t = 0.1 a note3 gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm , r gk = 1 k ? gate trigger current i gt 1 ? 100 note2 a tj = 25c, v d = 6 v, i t = 0.1 a note3 holding current i h ? ? 3 ma tj = 25c, v d = 12 v, r gk = 1 k ? thermal resistance r th (j-a) ? ? 180 c/w junction to ambient notes: 2. if special values of i gt are required, choose item d or e from t hose listed in the tabl e below if possible. item a b c d e i gt ( a) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 the above values do not include the current flowing through the 1 k ? resistance between the gate and cathode. 3. i gt , v gt measurement circuit. 3v dc i gs i gt 6v dc 60 ? v gt 2 1 t ut 1k ? ? )
CR02AM-8 rev.2.00, mar.01.20 05, page 3 of 7 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature gate trigger voltage (v) junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 10 0 2510 12 4 2 37 10 425 37 4 6 8 10 3 1 5 7 9 0 2.6 1.0 1.4 1.8 2.2 1.2 1.6 2.0 2.4 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 7 5 3 2 10 ?2 23 10 ?3 5710 ?2 23 5710 ?1 23 5710 0 200 0 80 100 120 140 160 180 40 60 20 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 10 ?2 10 0 10 1 10 1 7 5 3 2 10 ?1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ?2 23 57 23 57 10 ?1 10 2 23 57 23 57 v fgm = 6v v gt = 0.8v i gt = 100 a (tj = 25c) p gm = 0.1w p g(av) = 0.01w v gd = 0.2v i fgm = 0.1a 140 40 ?40 ?60 ?20 0 20 60 80 100 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160 ?40 ?20 20 80 140 120 0.2 0.5 0.9 060 40 100 ta = 25c typical example distribution typical example
CR02AM-8 rev.2.00, mar.01.20 05, page 4 of 7 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase half wave) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (c) ambient temperature (c) ambient temperature (c) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.4 00.10.20.3 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.4 0 0.1 0.2 0.3 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.5 0 0.1 0.2 0.3 0.4 = 30 60 120 90 180 dc 270 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.5 0 0.1 0.2 0.3 0.4 = 30 60 120 90 180 dc 270 160 120 60 40 20 140 100 80 0 0.5 0 0.1 0.2 0.3 0.4 = 30 60 120 90 180 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.5 0 0.1 0.2 0.3 0.4 = 30 60 120 90 180 360 resistive loads natural convection 360 resistive, inductive loads 360 resistive, inductive loads natural convection 360 resistive loads 360 resistive, inductive loads 360 resistive, inductive loads natural convection
CR02AM-8 rev.2.00, mar.01.20 05, page 5 of 7 breakover voltage vs. gate to cathode resistance gate to cathode resistance (k ? ) 100 (%) breakover voltage (r gk = rk ? ) breakover voltage (r gk = 1k ? ) breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) holding current vs. junction temperature holding current (ma) junction temperature (c) holding current vs. gate to cathode resistance gate to cathode resistance (k ? ) 100 (%) holding current (r gk = rk ? ) holding current (r gk = 1k ? ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage (dv/dt = vv/ s) breakover voltage (dv/dt = 1v/ s) 160 120 60 40 20 140 100 80 0 160 ?40 0 40 80 120 140 ?20 20 60 100 23 10 ?1 5710 0 23 5710 1 23 5710 2 120 0 80 100 40 60 20 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 80 100 40 60 20 # 1 # 2 23 10 ?1 5710 0 23 5710 1 23 5710 2 0 200 300 400 500 100 # 1 # 2 typical example i gt (25c) i h (1k ? ) 13 a1.6ma # 1 # 2 59 a1.8ma 60 ?20 ?40 ?60 0 20 40 80 100 120 140 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) repetitive peak reverse voltage vs. junction temperature 160 120 100 40 60 20 0 160 ?40 ?20 20 80 140 120 80 140 060 40 100 r gk = 1k ? typical example tj = 125c typical example # 1 i gt (25c)=10 a # 2 i gt (25c)=66 a tj = 125c, r gk = 1k ? distribution typical example typical example i h (25c) = 1ma i gt (25c) = 25 a typical example tj = 25c tj = 25c typical example
CR02AM-8 rev.2.00, mar.01.20 05, page 6 of 7 gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) gate current pulse width ( s) 10 3 234 10 0 5710 1 2345710 2 7 5 4 3 2 7 5 4 3 2 10 2 10 1 # 1 # 2 tj = 25c typical example i gt (25c) 10 a 66 a # 1 # 2
CR02AM-8 rev.2.00, mar.01.20 05, page 7 of 7 package dimensions sc-43a 0.23g mass[typ.] to-92 prss0003ea-a renesas code jeita package code package name unit: mm 5.0max 4.4 3.9max 12.5max 5.0max 1.25 circumscribed circle 0.7 1.25 1.3 order code lead form standard packing quantity standard order code standard order code example straight type vinyl sack 500 type name CR02AM-8 lead form vinyl sack 500 type name ? lead forming code CR02AM-8-a6 form a8 taping 2000 type name ? tb CR02AM-8-tb note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 2005. renesas technology corp., all rights reserved. printed in japan. colophon .2.0
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