uc1611 uc3611 features matched, four-diode monolithic array high peak current low-cost minidip package low-forward voltage parallelable for lower v f or higher i f fast recovery time military temperature range available description this four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. it is particularly useful on the outputs of high-speed power mo sfet drivers where schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line. these diodes are also ideally suited for use as voltage clamps when driv - ing inductive loads such as relays and solenoids, and to provide a path for current free- wheeling in motor drive applications. the use of schottky diode te chnology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. this single monolithic chip is fabricated in both hermetic cerdip and copper-leaded plastic packages. the uc1611 in ceramic is designed for -55c to +125c environments but with reduced peak current capability: while the uc3611 in plastic has higher current rating over a 0c to +70c ambient temperature range. quad schottky diode array connection diagram dil-8 (top view) n or j package plcc-20 (top view) q package soic-16 (top view) dw package 6/93
absolute maximum ratings peak inverse voltage (per diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50v diode-to-diode voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80v peak forward current uc1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1a uc3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3a power dissipation at t a = +70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1w storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c lead temperature (soldering, 10 seconds). . . . . . . . . . . . . . . . . . . . . . . +300c note: please consult packaging section of databook for thermal limitations and considerations of package. electrical characteristics: parameter test conditions min. typ. max. units forward voltage drop i f = 100ma 0.3 0.4 0.7 v i f = 1a 0.9 1.2 v leakage current v r = 40v 0.01 0.1 ma v r = 40v, t j = +100c 0.1 1.0 ma reverse recovery 0.5a forward to 0.5a reverse 20 ns forward recovery 1a forward to 1.1v recovery 40 ns junction capacitance v r = 5v 100 pf note: at forward currents of greater than 1.0a, a parasitic current of approximately 10ma may be collected by adjacent diodes. all specifications apply to each individual diode. t j = +25c except as noted. t a = t j. uc1611 uc3611 reverse current vs vo ltage forward current vs voltage 2
unitrode integrated circuits 7 continental bl vd. merrimack, nh 03054 tel. (603) 424-2410 fax (603) 424-3460 uc1611 uc3611 typical applications c. linear regulations b. transformer coupled drive circuits a. clamp diodes - pwms and drivers 3
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1 of 2 search power portal power management home > > power management > power supply support > schottky diode arrays uc1611, quad schottky diode array device status: active description features > description > features > datasheets > pricing/samples/availability > application notes parameter name uc1611 output current (a) 1 vin (v) 0 vin (max) (v) 50 pin count 8 this four - diode array is designed for general purpose use as individual diodes or as a high - speed, high - current bridge. it is particularly useful on the outputs of high - speed power mosfet drivers where schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line. these diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free - wheeling in motor drive applications. the use of schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. this single monolithic chip is fabricated in both hermetic cerdip and copper - leaded plastic packages. the uc1611 in ceramic is designed for - 55 c to +125 c environments but with reduced peak current capability: while the uc3611 in plastic has higher current rating over a 0 c to +70 c ambient temperature range. l matched, four - diode monolithic array
2 of 2 to view the following documents, acrobat reader 3.x is required. to download a document to your hard drive, right - click on the link and choose 'save'. datasheets full datasheet in acrobat pdf: slus338.pdf (158 kb) pricing/samples/availability application reports l electrostatic discharge application note (ssya008 - updated: 05/05/1999 ) l thermal characteristics of linear and logic packages using jedec pcb designs (szza017a - updated: 09/10/1999 ) table data updated on: 8/16/2000 l matched, four - diode monolithic array l high peak current l low - cost minidip package l low - forward voltage l parallelable for lower vf or higher if l fast recovery time l military temperature range available orderable device package pins temp ( o c) status price/unit usd (100 - 999) pack qty dscc number availability / samples 5962 - 90538012a l 20 - 55 to 125 active 40.75 1 check stock or order 5962 - 9053801pa j 8 - 55 to 125 active 20.86 1 check stock or order UC1611J j 8 - 55 to 125 active 16.40 1 check stock or order UC1611J883b j 8 - 55 to 125 active 20.86 1 check stock or order uc1611l l 20 - 55 to 125 active 54.33 1 check stock or order uc1611l883b l 20 - 55 to 125 active 40.75 1 5962 - 90538012a check stock or order ? copyright 2000 texas instruments incorporated. all rights reserved. trademarks | privacy policy
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