december 2005 / b http://takcheong.com 1 licensed by on semiconductor , a trademark of semiconductor components industries, llc for zener technology and products . tak cheong ? 1.3 watt do-41 hermetically sealed glass zener voltage regulators maximum ratings rating symbol value units maximum steady state power dissipation @ tl 50 , lead length = 3/8? derate above 50 p d 1.3 8.67 w mw/ operating and storage temperature range t j , t stg -65 to +200 c specification features: ? zener voltage range = 3.3v to 100v ? esd rating of clas 3 (>6 kv) per human body model ? do-41 package (do-204al) ? double slug type construction ? metallurgical bonded construction ? oxide passivated die specification features: case : double slug type, hermetically sealed glass finish : all external surfaces are corrosion resistant and leads are readily solderable polarity : cathode indicated by polarity band mounting: any maximum lead temperature for soldering purposes 230 , 1/16? from the case for 10 seconds ordering information device package quantity bzx85cxxx axial lead 2000 units / box bzx85cxxxrl axial lead 6000 units / tape & reel bzx85cxxxrl2* axial lead 6000 units / tape & reel bzx85cxxxta axial lead 4000 units / tape & ammo bzx85cxxxta2* axial lead 4000 units / tape & ammo * the ?2? suffix refer to 26mm tape spacing. bzx85c3v3 through bzx85c100 series cathode anode l = logo 85cxxx = device code l 85c xxx devices listed in bold italic are tak cheong preferred devices. preferred devices are recommended choices for future use and best overall value.
bzx85c3v3 through bzx85c100 series http://www.takcheong.com 2 electrical characteristics (t a = 25oc unless otherwise noted. v f = 1.2 v max @ i f = 200ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse zener current z zt maximum zener impedance @ i zt i zk reverse zener current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f i r surge current @ t a = 25oc electrical characteristics (t a = 25oc unless otherwise noted, v f = 1.2 v max @ i f = 200ma for all types) zener voltage (note 2 & 3.) zener impedance (note 4.) leakage current v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i r (note 5.) device (note 1.) device marking min nom max (ma) ( ? ?? ? )( ? ?? ? ) (ma) ( ? a max) (volts) (ma) bzx85c3v3 bzx85c3v3 3.1 3 .3 3.5 80 20 400 1 6 0 1 1380 bzx85c3v6 bzx85c3v6 3.4 3.6 3.8 60 15 500 1 30 1 1260 bzx85c3v9 bzx85c3v9 3.7 3.9 4.1 60 15 500 1 5 1 1190 bzx85c4v3 bzx85c4v3 4 4.3 4.6 50 13 500 1 3 1 1070 bzx85c4v7 bzx85c4v7 4.4 4.7 5 45 13 600 1 3 1.5 970 bzx85c5v1 bzx85c5v1 4.8 5.1 5.4 45 10 500 1 1 2 890 bzx85c5v6 bzx85c5v6 5.2 5.6 6 45 7 400 1 1 2 810 bzx85c6v2 bzx85c6v2 5.8 6.2 6.6 35 4 300 1 1 3 730 bzx85c6v8 bzx85c6v8 6.4 6.8 7.2 35 3.5 300 1 1 4 660 bzx85c7v5 bzx85c7v5 7 7.5 7.9 35 3 200 0.5 1 4.5 605 bzx85c8v2 bzx85c8v2 7.7 8.2 8.7 25 5 200 0.5 1 5 550 bzx85c9v1 bzx85c9v1 8.5 9.1 9.6 25 5 200 0.5 1 6.5 500 bzx85c10 bzx85c10 9.4 10 10.6 25 7 200 0.5 0.5 7 454 bzx85c11 bzx85c11 10.4 11 11.6 20 8 300 0.5 0.5 7.7 414 bzx85c12 bzx85c12 11.4 12 12.7 20 9 350 0.5 0.5 8.4 380 1. tolerance and type number designation tolerance designation ? the type numbers listed have zener voltage min/max limits as shown. device tolerance of 2% are indicated by a ?b? instead of a ?c?. 2. specials available include nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availability and delivery, contact your nearest tak cheong representative. 3. zener voltage (v z ) measurement vz is measured after the test current has been applied to 40 10msec., while maintaining the lead temperature (t l ) at 30 c 1 c and 3/8? lead length. 4. zener impedance (z z ) derivation the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 5. surge current (i r ) non-repetitive the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of ? squar e wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current i zt per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass.
bzx85c3v3 through bzx85c100 series http://www.takcheong.com 3 electrical characteristics (t a = 25oc unless otherwise noted, v f = 1.2 v max @ i f = 200ma for all types) zener voltage (note 7 & 8.) zener impedance (note 9.) leakage current v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i r (note 10.) device (note 6.) device marking min nom max (ma) ( ? ?? ? )( ? ?? ? ) (ma) ( ? a max) (volts) (ma) bzx85c13 bzx85c13 12.4 1 3 14.1 20 10 400 0.5 0 .5 9.1 344 bzx85c15 bzx85c15 13.8 15 15.6 15 15 500 0.5 0.5 10.5 304 bzx85c16 bzx85c16 15.3 16 17.1 15 15 500 0.5 0.5 11 285 bzx85c18 bzx85c18 16.8 18 19.1 15 20 500 0.5 0.5 12.5 250 bzx85c20 bzx85c20 18.8 20 21.2 10 24 600 0.5 0.5 14 225 bzx85c22 bzx85c22 20.8 22 23.3 10 25 600 0.5 0.5 15.5 205 bzx85c24 bzx85c24 22.8 24 25.6 10 25 600 0.5 0.5 17 190 bzx85c27 bzx85c27 25.1 27 28.9 8 30 750 0.25 0.5 19 170 bzx85c30 bzx85c30 28 30 32 8 30 1000 0.25 0.5 21 150 bzx85c33 bzx85c33 31 33 35 8 35 1000 0.25 0.5 23 135 bzx85c36 bzx85c36 34 36 38 8 40 1000 0.25 0.5 25 125 bzx85c39 bzx85c39 37 39 41 6 45 1000 0.25 0.5 27 115 bzx85c43 bzx85c43 40 43 46 6 50 1000 0.25 0.5 30 110 bzx85c47 bzx85c47 44 47 50 4 90 1500 0.25 0.5 33 95 bzx85c51 bzx85c51 48 51 54 4 115 1500 0.25 0.5 36 90 bzx85c56 bzx85c56 52 56 60 4 120 2000 0.25 0.5 39 80 bzx85c62 bzx85c62 58 62 66 4 125 2000 0.25 0.5 43 70 bzx85c68 bzx85c68 64 68 72 4 130 2000 0.25 0.5 47 65 bzx85c75 bzx85c75 70 75 80 4 150 2000 0.25 0.5 51 60 bzx85c82 bzx85c82 77 82 87 2.7 200 3000 0.25 0.5 56 55 bzx85c91 bzx85c91 85 91 96 2.7 250 3000 0.25 0.5 62 50 bzx85c100 bzx85c100 96 100 106 2.7 350 3000 0.25 0.5 68 45 6. tolerance and type number designation tolerance designation ? the type numbers listed have zener voltage min/max limits as shown. device tolerance of 2% are indicated by a ?b? instead of a ?c?. 7. specials available include nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availability and delivery, contact your nearest tak cheong representative. 8. zener voltage (v z ) measurement vz is measured after the test current has been applied to 40 10msec., while maintaining the lead temperature (t l ) at 30 c 1 c and 3/8? lead length. 9. zener impedance (z z ) derivation the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 10. surge current (i r ) non-repetitive the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of ? squ are wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current i zt per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass.
bzx85c3v3 through bzx85c100 series http://www.takcheong.com 4 figure 1. power temperature derating curve t l , lead temperature ( c) 0 0.1 0.5 0.9 1.3 1.7 p d , steady state power dissipation (watts) 20 40 60 80 100 120 140 160 180 200
bzx85c3v3 through bzx85c100 series http://www.takcheong.com 5 figure 2. temperature coefficients (-55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) a. range for units to 12 volts b. range for units to 12 to 100 volts +12 +10 +8 +6 +4 +2 0 -2 -4 v z , zener voltage (volts) v z , temperature coefficient (mv/ c ) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 70 100 v z , zener voltage (volts) v z , temper a ture coefficien t (mv / c) v z @ i zt range range v z @ i zt figure 3. typical thermal resistance versus lead length figure 4. effect of zener current 175 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.60.7 0.8 0.9 1 l, lead length to heat sink (inches) j l , junction-to-lead thermal resistance (mv / c) v z , temperature coefficient (mv/ c) +6 +4 +2 0 -2 -4 v z , zener voltage (volts) v z @ i z t a 20 ma 0.01 ma 1 ma note: below 3 volts and above 8 volts note: changes in zener current do not note: effect temperature coefficients figure 5. maximum surge power 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p w , pulse width (ms) this graph represents 90 percentile data points. for worst case design characteristics, multiply surge power by 2/3. p pk , peak surge power (watta) 11 v - 100 v nonrepetitive 3.3 v - 10 v nonrepetitive 5% duty cycle 10% duty cycle 20% duty cycle rect angular waveform t j = 25 c prior to initial pulse 2 3 4 5 6 789 10 11 12 3 4 5 6 78 = 25 c
bzx85c3v3 through bzx85c100 series http:// ww w. ta kc he on g .com 6 v f , fo r w ard vol t age (vo l ts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , for ward current (ma) maximum 150 v c 75 v c 0 v c 25 v c figure 6. effect of zener current on zener impedance figure 7. effect of zener voltage on zener impedance figure 8. t ypical leakage current 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 100 v z , zener vo l t age (v) 35 710 2030 5070 z z , dynamic impedance (ohms) 10000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 i r , leakage current ( m a ) 3 456 78 9101112131415 v z , nominal zener vo l t age (vo l ts) +25 v c +125 v c typical leakage current at 80% of nominal breakdown voltage t j = 25 v c i z (rms) = 0.1 i z (dc) f = 60 hz 6.2 v 27 v v z = 2.7 v 47 v t j = 25 v c i z (rms) = 0.1 i z (dc) f = 60 hz 20 ma 5 ma i z = 1 ma 0 v bias 1 v bias 400 300 200 100 50 20 10 8 4 1 2 5 10 20 50 100 v z , nominal v z (volts) c, cap acit ance (pf) 50% of breakdown bias minimum figure 9. t ypical capacitance versus v z figure 10. typical forward characteristics
bzx85c3v3 through bzx85c100 series http:// www . t a kc he o n g .com 7 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found as follows: d t jl = q jl p d . q jl may be determined from figure 3 for dc power conditions. for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j . q vz , the zener voltage temperature coefficient, is found from figure 2. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 5 be exceeded.
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