general specifications features high sensitivity high s/n ratio wide dynamic range center hole for beam line compact and lightweight applications scanning electron microscopy scanning ion microscopy electron lithography mask aligner electron beam measuring system ion scattering spectroscopy parameter value unit assembly outer size effective area height (max.) mcp channel diameter number of mcps mcp center dead area mm mm mm m mm 56.5 27.0 8.6 12 2 8 ratings mcp supply voltage (max.) mcp-out to anode supply voltage (max.) mesh to mcp-in supply voltage anode to substrate supply voltage operating vacuum condition (max.) ambient temperature baking temperature baking time vacuum condition for baking (max.) kv kv kv kv pa c c hours pa 2 0.5 0.5 3 1.3 10 -4 +10 to +40 300 10 1.3 10 -4 typical electrical characteristics (supply voltage: 2 kv, vacuum: 1.3 10 -4 pa, operating ambient temperature: +25 c) gain at 1.8 kv (min.) plate resistance maximum linear output dark current m ? / mcp pa?m -2 1 10 6 20 to 40 7 % of strip current under uniform input into whole mcp effective area 20 mcp assembly F2223-21SH this mcp assembly is a suitable detector for an electron or ion beam in sem, sim or lithography. it is possible to detect some signal from a sample with high sensitivi- ty, that can be performed with the compactness and the center hole of this assembly. it allows to set this assembly at close position to the sample and gives better efficiency in the beam detection. tmcpf0020 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office.
mcp assembly F2223-21SH tmcp1001e03 oct. 2006 ip gain characteristic construction and application example wiring potential example mesh mcp-in mcp-out anode center pipe and substrate sample * this is an example potential to detect secondary electrons. for other applications, please consult to our sales office. ................................................ +200 v ............................................. +500 v ........................................ +2300 v ............................................ +2400 v ........ gnd ................................................ gnd dimensional outlines (unit: mm) tmcpc0001ea tmcpa0002ee hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com supply voltage (kv) gain 10 8 10 7 10 6 10 5 10 4 10 3 1 1.5 2 tmcpb0003ea sample secondary electron ( reflecting electron ) mesh mcp (2-stage) anode 41 56.5 27 8.6 mesh lead mcp-in lead (sus-nm) mcp-out lead (sus-nm) anode lead effective area 8 mcp (2-stage) mesh center pipe (inner dia. 4) substrate (sus304) single anode dead space 4- 2.6 pcd* 50.8 4 * pcd (pitch circle diameter)
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