power transistor arrays 1 publication date: march 2004 sjk00039aed pub4325 (pu4325) silicon npn/pnp planar type darlington for power amplification features ? npn 2 elements + pnp 2 elements npn ? high forward current transfer ratio h fe ? darlington connection with a built-in zener diode pnp ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector-emitter saturation voltage v ce(sat) absolute maximum ratings t c = 25 c note) the part number in the parenthesis shows conventional part number. unit: mm 1: emitter 2: base 3: collector 4: base 5: collector 6: base 7: collector 8: base 9: collector 10: emitter sip10-a1 package 25.3 0.2 9 2.54 = 22.86 0.25 0.5 0.15 c 1.5 0.5 12345678910 1.0 0.25 2.54 0.2 9.5 0.2 1.65 0.2 8.0 0.2 4.4 0.5 solder dip 5.3 0.5 4.0 0.2 0.8 0.25 0.5 0.15 parameter symbol rating unit npn collector-base voltage v cbo 60 10 v (emitter open) collector-emitter voltage v ceo 60 10 v (base open) emitter-base voltage v ebo 5v (collector open) collector current i c 2a peak collector current i cp 4a pnp collector-base voltage v cbo ? 60 v (emitter open) collector-emitter voltage v ceo ? 60 v (base open) emitter-base voltage v ebo ? 6v (collector open) collector current i c ? 3 a peak collector current i cp ? 5 a overall collector power dissipation p c 15 w t a = 25 c 3.5 junction temperature t j 150 c storage temperature t stg ? 55 + 150 c maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
pub4325 2 sjk00039aed internal connection 1 10 2 35 4 8 9 6 7 parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 5 ma, i b = 05070v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02ma forward current transfer ratio h fe1 v ce = 4 v, i c = 1 a 1 000 h fe2 v ce = 4 v, i c = 2 a 1 000 10 000 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 8 ma 2.5 v base-emitter saturation voltage v be(sat) i c = 2 a, i b = 8 ma 2.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz energy handling capability e s/b i c = 0.71 a, l = 100 mh, r be = 100 25 mj electrical characteristics t c = 25 c 3 c ? npn ? pnp parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = ? 30 ma, i b = 0 ? 60 v base-emitter voltage v be v ce = ? 4 v, i c = ? 3 a ? 1.8 v collector-emitter current (e-b short) i ces v ce = ? 60 v, v be = 0 ? 200 a collector-emitter cutoff current (base open) i ceo v ce = ? 30 v, i b = 0 ? 300 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 1ma forward current transfer ratio h fe1 v ce = ? 4 v, i c = ? 1 a 70 250 h fe2 v ce = ? 4 v, i c = ? 3 a 10 collector-emitter saturation voltage v ce(sat) i c = ? 3 a, i b = ? 0.375 a ? 1.2 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
pub4325 3 sjk00039aed i c v be v ce(sat) i c h fe i c p c t a safe operation area common characteristics chart characteristics charts of npn 0 160 80 120 40 0 20 16 12 4 8 ( 1 ) t c = t a ( 2 ) with a 50 50 2 mm al heat sink ( 3 ) without heat sink ( 3 ) ( 1 ) ( 2 ) collector power dissipation p c ( w ) ambient temperature t a ( c ) v ce = 4 v 0 2.4 2.0 1.6 0.4 1.2 0.8 0 8 6 4 2 ? 25 c t c = 100 c 25 c base-emitter voltage v be ( v ) collector current i c ( a ) i c / i b = 250 110 0.1 1 10 ? 25 c t c = 75 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) v ce = 4 v 0.01 0.1 1 10 10 5 10 4 10 3 10 2 10 ? 25 c t c = 100 c 25 c forward current transfer ratio h fe collector current i c ( a ) 1 10 100 1 000 0.01 0.1 1 10 100 non repetitve pulse t c = 25 c ( per circuit ) t = 10 ms i cp t = 1 ms collector current i c ( a ) collector-emitter voltage v ce ( v )
pub4325 4 sjk00039aed i c v be v ce(sat) i c h fe i c safe operation area characteristics charts of pnp v ce = 4 v 0 ? 2.4 ? 2.0 ? 1.6 ? 0.4 ? 1.2 ? 0.8 0 ? 8 ? 6 ? 4 ? 2 25 c ? 25 c t c = 100 c base-emitter voltage v be ( v ) collector current i c ( a ) i c / i b = 250 ? 1 ? 10 ? 0.1 ? 1 ? 10 ? 25 c t c = 100 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) v ce = ? 4 v ? 0.01 ? 0. 1 ? 1 ? 10 1 10 4 10 10 2 10 3 ? 25 c t c = 100 c 25 c forward current transfer ratio h fe collector current i c ( a ) ? 1 ? 10 ? 100 ? 1 000 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 non repetitve pulse t c = 25 c ( per circuit ) t = 10 ms i cp t = 1 ms collector current i c ( a ) collector-emitter voltage v ce ( v )
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