2SK2964 2008-06-13 1 toshiba field effect transistor silicon n channel mos type (l 2 ?? mosvi) 2SK2964 chopper regulators, dc ? dc converters and motor driveapplications z 4-v gate drive z low drain-source on-resistance: r ds (on) = 0.13 (typ.) z high forward transfer admittance: |y fs | = 2.5 s (typ.) z low leakage current: i dss = 100 a (max) (v ds = 30 v) z enhancement mode: v th = 0.8 to 2.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain? source voltage v dss 30 v drain? gate voltage (r gs = 20 k ) v dgr 30 v gate? source voltage v gss 20 v dc (note 1) i d 2 a drain current pulse (note 1) i dp 6 a drain power dissipation p d 0.5 w drain power dissipation (note 2) p d 1.5 w single pulse avalanche energy (note 3) e as 56 mj avalanche current i ar 2 a repetitive avalanche energy (note 4) e ar 0.05 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precaut ions?/?derating concept and methods?) and individual reliability data (i.e. reliabilit y test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient r th (ch ? a) 250 c / w note 1: ensure that the channel temperature does not exceed 150c. note 2: mounted on a ceramic substrate (25.4 mm 25.4 mm 0.8 mm) note 3: v dd = 25 v, t ch = 25c (initial), l = 10 mh, r g = 25 , i ar = 2 a note 4: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-5k1b weight: 0.05 g (typ.)
2SK2964 2008-06-13 2 marking electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut? off current i dss v ds = 30 v, v gs = 0 v ? ? 100 a drain? source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 0.8 ? 2.0 v v gs = 4 v, i d = 1 a ? 0.18 0.25 drain? source on-resistance r ds (on) v gs = 10 v, i d = 1 a ? 0.13 0.18 forward transfer admittance |y fs | v ds = 10 v, i d = 1 a 1.2 2.5 ? s input capacitance c iss ? 140 ? reverse transfer capacitance c rss ? 30 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 80 ? pf rise time t r ? 10 ? turn ? on time t on ? 15 ? fall time t f ? 85 ? switching time turn ? off time t off duty 1%, t w = 10 s ? 195 ? ns total gate charge (gate ? source plus gate? drain) q g ? 5.8 ? gate? source charge q gs ? 4.3 ? gate? drain (?miller?) charge q gd v dd 24 v, v gs = 10 v, i d = 2 a ? 1.5 ? nc source? drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 2 a pulse drain reverse current (note 1) i drp ? ? ? 6 a forward voltage (diode) v dsf i dr = 2 a, v gs = 0 v ? ? ? 1.5 v reverse recovery time t rr ? 50 ? ns reverse recovery charge q rr i dr = 2 a, v gs = 0 v, di dr /dt = 50 a/ s ? 20 ? nc z c part no. (or abbreviation code) lot no. a line indicates lead (pb)-free r l = 15 v dd 15 v 0 v v gs 10 v 50 i d = 1 a v out
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2SK2964 2008-06-13 5 ? ? ? ? ? ? ? ???= dd vdss vdss as v b b il 2 1 e 2 r g = 25 v dd = 25 v, l = 10 mh
2SK2964 2008-06-13 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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