in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) www.in?neon.com/irdt ? 1-800-777-4363 1 may 18, 1999-13 features ? compliant with irda speci?cation ? data rates 9.6 kb/s to 4.0 mb/s ? wide range of supply voltage 2.7 to 5.5 v ? standby current 3.3 ma at 5.0 v typical ? shut down current 0.01 m a typical ? excellent power supply noise rejection ? tri-state receiver output and txd disable ? ac coupled transmit input C provides integrated protection for eye safety ? high dc ambient rejection ? independent led supply, anode pin can take C up to 9.0 v dc when not transmitting and C up to 4.0 v above v cc when transmitting ? receiver latency less than 100 m s ? slimline package: h 4.0 mm x d 4.8 mm x l 9.8 mm description with state of the art submicron bicmos circuitry, coupled with in?neon optoelectronic expertise, the irms6400/irmt6400 outperforms its closest rival. in?neon has incorporated a mode selection pin that toggles the device to operate in fir (4 mb/s) or sir/mir (9.6 kb/s to 1.152 mb/s) mode. its exter- nal shut down (sd) feature cuts current consump- tion to typically 0.01 a. the transmit input is ac coupled, limiting transmit pulse duration to 70 s, preventing transmitter damage and continuous led output. mode select determines the data rate. low for 9.6 kb/s to 1.152 mb/s, high for 4 mb/s. irms6400 irmt6400 absolute maximum ratings, t a =25 c (except where noted) supply voltage range, all states, v cc .................................... C0.5 to +7.0 v led anode voltage, not transmitting, v leda ........................................9.0 v led anode voltage, transmitting, v leda .................................. 4.0 v + v cc input currents, (pin 3 and 5) .............................................................. 20 ma output sinking current...................................................................... 50 ma storage temperature, t s .......................................................C40 to +100c ambient temperature, operating, t a .......................................C25 to +85c lead solder temperature, 230c ........................................................<10 s ic junction temperature, t j ............................................................... 125c average ir led current, dc, i led ................................................... 100 ma repetitive pulsed ir led current, <90 m s, t on <25%, i led(rp) ............................................................ 700 ma transmit data input voltage, v txd ..................................C0.5 to v cc + 0.5 v receive data output voltage, v rxd ....................................... C0.5 to v cc + 0.5 v table 1. pin functions *pin 7 internally grounded pin no. function pin no. function 1 led anode 5 sd/mode 2 led cathode 6 v cc 3 txd 7 *do not connect 4 rxd 8 gnd .374 (9.86) c l pin 1 .138 (3.50) .19 0 (4.83) .10 6 (2.70) .116 (2.95) pin 1 .15 7 (4.00) ed e=emitter d=detector irms6400 irmt6400 dimensions in inches (mm) side view irms6400 top view irmt6400 4 mb/s infrared data transceiver
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 2 may 18, 1999-13 figure 1. block diagram electrical characteristics table 2. basic parameters, t a =25 c (except where noted) table 3. i/o parameters parameter min. typ. max. unit conditions data rate 9.6 k 4 m bits/s standard pulse width v cc voltage 2.7 5.5 v 0 to 70c, v cc to v ss maximum led anode voltage 4 v+ v cc v v cc =2.7 v to 5.5 v i cc standby current 3.3 4.5 ma sd=0, v cc =2.7 v to 5.5 v, no receive signal i cc receiving current 3.8 5.0 ma 10 m w, 4.0 mb/s, 15 pf load i cc shut down current (note 1) 0.01 1.0 m a sd= v cc , v cc =2.7 v to 5.5 v i cc transmitting current 12 40 ma txd= v cc , v cc =5.0 v, v led =5.0 v, ro=5.1 w minimum v cc 2.5 v reduced performance parameter min. typ. max. unit conditions txd, sd input capacitance 5.0 pf v cc =2.7 v to 5.5 v txd pull-down 350 500 700 k w txd= v cc , v cc =5.0 v minimum dv/dt of txd input signal 0.7 1.4 v/ m s 5.0 v pulse txd minimum hold time for mode change 90 200 ns v cc =2.7 v to 5.5 v, referenced to sd negative clocking edge txd minimum setup time for mode change (note 2) C70 C40 ns v cc =2.7 v to 5.5 v, referenced to sd negative clocking edge txd input threshold 1.0 1.4 1.8 v cc v cc =2.7 v to 5.5 v, 125 ns input pulse sd transmit enable 500 ns v cc =2.7 v to 5.5 v, (note 3) sd to txd input disable & rxd tri-state 50 70 ns v cc =2.7 v to 5.5 v sd input threshold 1.0 1.4 1.8 v v cc =5.0 v sd input threshold 0.6 0.9 1.2 v v cc =2.7 v + + receiver output receive detector regulated voltage & current sources power down control tri-state control transmit error amp detector reference lowpass filter ir led agc & signal reference processor agc txd feedback blanking switched current source pull-down txd in txd input buffer main amp preamp ambient dc cancelling photodiode v cc receive ouput blanking txd gnd sd/mode rxd tri-state cmos buffer fir/sir-mir flip/flop bandwidth control v cc v cc v cc pin 5 pin 2 pin 4 pin 6 pin 1 led cathode pin 8 pin 3 led anode
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 3 may 18, 1999-13 table 3. i/o parameters (continued) table 4. receiver parameters, high rate mode (fir), t a =25 c (except where noted) table 5. receiver parameters, low rate mode (sir/mir), t a =25 c (except where noted) parameter min. typ. max. unit conditions rxd output high 3.5 4.0 v v cc =5.0 v, i oh =24 ma rxd output high 2.0 2.3 v v cc =2.7 v, i oh =6.0 ma rxd output low 1.0 1.5 v v cc =5.0 v, i ol =24 ma rxd ouput low 0.4 0.8 v v cc =2.7 v, i ol =6.0 ma rxd short circuit 48 ma v cc =5.0 v, rxd=0, rxd= v cc rxd short circuit 48 ma v cc =2.7 v, rxd=0, rxd= v cc rxd to v cc tri-state impedance 350 500 650 k w sd= v cc , v cc =5.0 v, measured between rxd to v cc rxd rise/fall time 7.0 ns v cc =5.0 v, load=15 pf rxd rise/fall time 15 ns v cc =5.0 v, load=100 pf rxd rise/fall time 10 ns v cc =2.7 v, load=15 pf rxd rise/fall time 27 ns v cc =2.7 v, load=100 pf parameter symbol min. typ. max. unit conditions data rate 4 m bit/s 125 ns (low rate pulse), 0 to 70c logic high input irradiance e ihmin 10 m w/cm 2 bit error rate=10 C8 logic high input irradiance e ihmax 500 mw/cm 2 in-band irradiance maximum minimum detection threshold e emin 4.0 m w/cm 2 4.0 mb/s logic low input irradiance e il 0.4 m w/cm 2 ambient interference pulsed receive latency (near-far) 500 800 m s 0 to 10 mw/cm 2 ambient input powerup latency 50 100 m s 0 to 10 mw/cm 2 ambient input transmit latency (turn around) 30 50 m s 0 to 10 mw/cm 2 ambient input pulse width correction range 90 175 ns 40 m w/cm 2 input to produce 115 ns to 135 ns output, v cc =2.7 v to 5.5 v pulse width settling 8.0 16 m s 40 m w/cm 2 input output pulse edge jitter & bias at rxd 10 ns 125 ns, 40 m w/cm 2 input, load=15 pf, measured at 1.4 v output pulse width at rxd 110 125 140 ns 125 ns, 40 m w/cm 2 input, load=15 pf, measured at 1.4 v power supply rejection <5 mhz 50 mv p <0.1 pulse per second spurious output power supply rejection >5 mhz 25 mv p <0.1 pulse per second spurious output parameter symbol min. typ. max. unit conditions data rate 9.6 k 1.15 m bits/s 9.6 kb/s to 115 kb/s=1.63 s, 576 kb/s=434 ns, 1.152 mb/s=217 ns logic high input irradiance (mir) e ihmin 10 m w/cm 2 bit error rate=10 C8 logic high input irradiance (sir) e ihmin 4.0 m w/cm 2 bit error rate=10 C8 logic high input irradiance e ihmax 500 mw/cm 2 in band irradiance maximum logic low input irradiance e il 0.4 m w/cm 2 ambient interference pulsed receive latency (near-far) 2.5 4.0 ms 0 to 10 mw/cm 2 ambient input transmit latency (turn around) 50 100 m s 0 to 10 mw/cm 2 ambient input power-up latency 50 150 m s 0 to 10 mw/cm 2 ambient input power supply rejection <5 mhz 50 mv p <0.1 pulse per second spurious output power supply rejection >5 mhz 25 mv p <0.1 pulse per second spurious output
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 4 may 18, 1999-13 table 6. transmitter output note 1: for shut down (sd) current to fall below 1 m a requires driving the shut down (sd) pin to within 0.5 v of v cc to ensure cutoff of the input pmos transistor of the input cmos totem pole. note 2: negative setup times indicate that the internal data propagation time is longer than the latching signal propagation time. this is com- mon on logic devices. it means that the txd data can go away before the negative shut down (sd) edge occurs and not lose the data. (see application notes for more details). mode switching (see figure 2.) normally the irms6400/irmt6400 series initializes in the sir/mir (9.6 kb/s to 1.152 mb/s) mode upon power-up. switching the module to fir (4 mb/s) mode can be achieved as follows: ? bring shut down (sd)/mode pin to a logic high status. ? bring txd input to a logic high status. wait for t s 3 C 40 ns. ? bring shut down (sd)/mode pin to a logic low status. the negative transition of this pulse will set the module mode to (4 mb/s) data rate by reading the state of txd . ? bring txd to a logic low after waiting for t h 3 90 ns. figure 2. switching mode switching to sir/mir (9.6 kb/s to 1.15 mb/s) mode: ? bring shut down (sd)/mode pin to a logic high status. ? bring txd input to a logic low status. wait for t s 3 C 40 ns. ? bring shut down (sd)/mode pin to a logic low status. the negative transition of this pulse will set the module mode to 115 kb/s data rate by reading the state of txd. parameter min. typ. max. unit conditions transmit delay 15 ns 125 ns pulse, v cc =5.0 v pulse width limit 50 70 100 m s txd pulse>100 m s, 5.0 v pulse, v cc =5.0 v txd peak wavelength 850 870 900 nm i f =20 ma dc led anode current limit 510 610 680 ma txd= v cc , led anode=5.0 v, v cc =5.0 v, averaged over 125 ns pulse led anode current limit 310 450 550 ma txd= v cc , led anode=3.0 v, v cc =3.0 v, averaged over 125 ns pulse led cathode saturation drop 0.3 0.4 v 400 ma, v cc =2.7 v v cc transient immunity v cc 1 v cc 2 v peak 10 ns pulse height, v cc =5.0 v (note 4) transmit output rise and fall time (t r , t f) 10 40nsv led =2.7 v, no resistor sd/mode txd txd t h t s pulse will set the device into 4 mb/s data rate mode pulse will set the device into sir/mir mode note 3: shut down (sd) to transmit enable is the time required for the transmit bias circuits to stabilize. applying a transmit pulse before this time has elapsed will reduce the transmit pulse width. note 4: transmit v cc transient immunity measures the transmitter circuitry immunity from large v cc and ground return inductive transients arising from the action of large transmitter di/dt currents on v cc and ground return trace inductances. this test applies a negative 10 ns v cc pulse to simulate the effects of transmitter current induce v cc transients (assuming the led anode supply and v cc have a shared inductance) and measures for less than a 10% change in pulse width or delivered charge on the initial pulse and subsequent pulse.
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 5 may 18, 1999-13 figure 3. infrared re?ow soldering pro?le interface diagrams figure 4. super i/o (pc87338vlj) to irms6400/ irmt6400 figure 5. ultra i/o controller with fast ir (fdc37c93xfr) to irms6400/irmt6400 0 50 100 150 200 250 300 0 50 100 150 time (sec) 210 c maximum 240(+5/?) c 30 s minimum 30 s minimum 60 s minimum temperature ( c) note: peak temperature is 240 (+5 C0)c for less than 10 seconds. 0.1 f 6.8 f 6 8 5 3 4 1 v cc gnd 65 50 42 68 67 ir txd ir rxd ir slo irmx6400 gnd sd txd rxd led anode v cc v cc v ss pc87338vlj r 0 0.1 f 6.8 f 6 8 5 3 4 1 v cc gnd 99 125 130 19 98 ir txd ir rxd ir mode irmx6400 gnd sd txd rxd led anode v cc v cc gnd fdc37c93xfr r 0 figure 6. super i/o (pc87338vlj) to irms6400/irmt6400 with independent v led power supply table 7. recommended r o values for different v led parameter values unit v led power supply 2.4 2.7 3.0 3.5 4.0 4.5 5.0 v resistor 0 0 0 1.2 2.7 3.9 5.1 w c 1 =0.1 f c 2 =10 f 6 8 5 3 4 1 v cc v led gnd 65 50 42 67 68 ir txd ir rxd ir slo irmx6400 gnd r 0 sd led anode v cc c 3 =0.1 f c 4 =6.8 f v cc v ss pc87338vlj txd rxd
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 6 may 18, 1999-13 ordering information figure 7. tape dimensions in inches (mm) part number description pcb mounting orientation irms6400 integrated transceiver side view packaged in component carrier reel (1000/reel) for side view mounting on pcb irmt6400 integrated transceiver top view packaged in component carrier reel (1000/reel) for top view mounting on pcb tape leader and trailer is 400 mm minimum. .199 .004 (5.06 .10) ko .401 .004 (10.19 .10 ) bo 4 max. .315 .004 (8.00 .10 ) .157 .004 (4.00 0.10 ) .059 +.004 (1.50 +.10 ) .079 .004 (2.00 .10 ) .069 .004 (1.75 .010 ) 1.50 +.25 (.059 +.010 ) .315 .004 (8.00 .10 ) .157 .004 (4.00 0.10 ) .059 +.004 (1.50 +.10 ) .079 .004 (2.00 .10 ) .069 .004 (1.75 .010 ) .295 .004 (7.50 0.10 ) .295 .004 (7.50 0.10 ) 1.50 +.25 (.059 +.010 ) .167 .004 (4.23 .10) ko .400 .004 (10.16 .10 ) .216 (5.48) bo 4 max. ao .0140 .0005 (.356 .013 ) 8 max. .167 .004 (4.23 .10) ao .0130 .0005 (.330 .013 ) 8 max. .185 .004 (4.70 .10 ) .156 (3.97) feed direction feed direction pin 1 pin 1 .630 +.012 ?004 16.0 +.30 ?10 .630 +.012 ?004 16.0 +.30 ?10 irmt6400 (top view) irms6400 (side view) figure 8. reel dimensions in inches (mm) see detail a detail a 0.79 (20.2) min. x 4.01 (102.0) ref. w2 (measured at hub) w1 (measured at hub) 0.512 +0.020 ?.008 13.0 + 0.5 0.2 matte finish these areas 0.079 0.020 (2.0 0.5 ) 12.97 (330.0) ref.
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) irms6400/irmt64 00 www.in?neon.com/irdt ? 1-800-777-4363 7 may 18, 1999-13 figure 9. irms6400/irmt6400 detail drawings with optional side view or top view mounting .167 (4.23) .053 (1.35) .051 (1.30) .134 (3.40) .190 (4.83) .116 (2.95) .106 (2.70) .069 (1.74) .051 (1.30) .008 (.20) .157 (4.00) .004 (.10) 5 4x coplaner 90 to 93 5 4x .012 (.28) .079 (2.00) .014 (.36) c l .67 (1.70) .197 (5.00) .165 (4.20) .138 (3.50) .016 (0.40) typ. .030 (0.75) .065 (1.65) .027 (0.69) .020 (0.51) .039 (1.00) .378 (9.60) .388 (9.86) max. 1" draft pick and place front pick and place 1 draft (2 plcs) 5 4x pin 1 pin 1 ed c l .333 (7.71) .079 (2.00) .028 (.70) typ. .039 (1.00) typ. recommended pcb footprint top view 12345678 .053 (1.35) .0059 (0.15) 6400ryyww for high emi environment application the irms6400 and irmt6400 modules are available with a metal can shield. the metal shielded modules are designated as irms6409 and irmt6409 respectively. dimensions in inches (mm)all dimensions have tolerances of 0.004 (0.1 mm) ? in?neon technologies, corp., optoelectronic division (formerly siemens microelectronics, inc.) printed in the united states of america. all rights reserved. the information provided is believed to be accurate and reliable. in?neon reserves the right to make changes to the product described without notice. no liability is assumed as a result of its use nor for any infringement of the rights of others. this document may contain preliminary information and is subject to change by in?neon without notice. some of the parametric data expressed in this preliminary data sheet is considered to be functional by design. in?neon assumes no responsibility or liability for any use of the information contained herein. nothing in this document shall oper- ate as an express or implied license or indemnity under the intellectual property rights of in?neon or third parties. the products described in this document are not intended for use in implantation or other direct life support applications where malfunction may result in the direct physical harm or injury to persons. no warranties of any kind, including, but not limited to, the implied warranties of merchantability of fitness for a particular purpose, are offered in this document.
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