item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure associated gain noise figure associated gain noise figure associated gain maximum available gain symbol i dss 15 30 60 35 45 - -0.2 - -0.7 -1.5 0.75 0.85 -3.0 - - 9.5 10.5 - 9.5 10.5 - 9.5 10.5 - - 0.9 same as above, gain matched 1.1 v ds = 2v, i ds = 1ma v ds = 2v, i ds = 10ma v ds = 2v, v gs = 0v i gs = -10 a v ds = 2v i ds = 10ma f = 12ghz ma ms v db - 1.1 1.35 db db 11.0 12.0 - db db db db v g m fhx04x FHX05X fhx06x v p v gso nf g as nf g as nf g as g a (max) test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) note: rf parameter sample size 10pcs. criteria (accept/reject)=(2/3) channel to case - 220 300 ? c/w thermal resistance r th 1 edition 1.1 july 1999 fhx04x, FHX05X, fhx06x gaas fet & hemt chips description the fhx04x, FHX05X, fhx06x are high electron mobility transistors (hemt) intended for general purpose, low noise and high gain amplifiers in the 2-18ghz frequency range. the devices are well suited for telecommunication, dbs, tvro, vsat or other low noise applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 3.5 -3.0 180 -65 to +175 175 v v mw ? c ? c p t* t stg t ch unit rating absolute maximum rating (ambient temperature ta=25 ? c) *note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 2 volts. 2. the forward and reverse gate currents should not exceed 0.2 and -0.05 ma respectively with gate resistance of 4000 w . 3. the operating channel temperature (t ch ) should not exceed 80 ? c. features ?low noise figure: 0.75db (typ.)@f=12ghz (fhx04) ?high associated gain: 10.5db (typ.)@f=12ghz ?lg 2 0.25 m, wg = 200 m ?gold gate metallization for high reliability
2 fhx04x, FHX05X, fhx06x gaas fet & hemt chips nf & gas vs. i ds drain current vs. drain-source voltage output power vs. input power 3 f=12ghz v ds =2v f=12ghz v ds =2v gain matched i ds =15ma noise figure matched i ds =10ma 2 1 0 12 10 8 7 9 11 10 20 30 -10 -5 0 5 1 2 3 4 drain current (ma) input power (dbm) drain-source voltage (v) noise figure (db) 40 30 20 0 10 10 5 0 drain current (ma) output power (dbm) associated gain (db) -0.4v -0.2v gas nf v gs = 0v -0.6v -0.8v power derating curve 50 100 150 200 ambient temperature ( ? c) 200 150 100 0 0 50 total power dissipation (w)
3 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 scale for |s 21 | scale for |s 12 | .02 .04 .06 .08 2 1 3 4 2 2 1 2 1 1 1 0.1 ghz 0.1 ghz 0.1 ghz 0.1 ghz 4 4 4 6 6 6 6 8 8 8 8 10 10 10 10 12 12 12 14 14 14 14 16 16 16 16 18 18 18 18 20 20 20 20 22 22 22 22 5 100 10 25 50 w s-p arameters v ds = 2v , i ds = 10ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 1.000 -0.9 3.721 179.2 .001 89.5 .606 -0.4 500 .999 -4.7 3.717 176.0 .007 87.7 .605 -2.1 1000 .996 -9.5 3.705 172.0 .013 86.4 .604 -4.2 2000 .983 -18.8 3.658 164.1 .026 81.0 .598 -8.3 4000 .928 -37.0 3.489 149.0 .049 72.3 .576 -16.0 6000 .877 -54.0 3.255 135.1 .068 66.0 .547 -22.9 8000 .81 1 -59.3 2.999 122.5 .082 60.3 .516 -28.9 10000 .748 -84.5 2.750 1 1 1.2 .093 57.3 .485 -34.2 12000 .694 -98.2 2.521 101.1 .101 55.2 .457 -39.1 14000 .649 -1 1 1.1 2.319 92.0 .108 54.6 .432 -43.7 16000 .614 -123.2 2.142 83.5 .1 14 55.0 .410 -48.4 18000 .588 -134.6 1.988 75.9 .121 56.2 .391 -53.2 20000 .570 -145.4 1.853 68.8 .130 57.8 .373 -58.4 note:* the data includes bonding wires. n: number of wires gate n=2 (0.3mm length, 20um dia au wire) drain n=2 (0.3mm length, 20um dia au wire) source n=4 (0.3mm length, 20um dia au wire) noise parameters v ds =2v, i ds =10ma freq. (ghz) g opt (mag) (ang) nfmin (db) rn/50 2 4 6 8 10 12 14 16 18 20 0.80 0.74 0.68 0.63 0.58 0.52 0.47 0.42 0.38 0.33 16 31 46 61 75 89 102 114 126 137 0.33 0.35 0.44 0.53 0.63 0.72 0.84 0.97 1.09 1.22 0.50 0.45 0.40 0.30 0.23 0.18 0.14 0.12 0.10 0.09 ga (max) & |s 21 | 2 vs. frequency v ds =2v i ds =10ma ga (max) |s 21 | 2 15 10 5 4 6 8 10 12 20 30 frequency (ghz) gain (db) fhx04x, FHX05X, fhx06x gaas fet & hemt chips
for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1998 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 4 chip outline (unit: m) 96 60 96 450 20 154 350 20 60 70 44 44 die thickness: 100 20 m fhx04x, FHX05X, fhx06x gaas fet & hemt chips
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